S21P Search Results

Contextual Info: ANT-24G-S21P 2.4GHz Miniature PIGTail Antenna Features • 1/4 Wave Monopole Antenna · 21mm long · 50mm PIGtail to IPEX ufl · Rugged Flexible Plastic Finish. · VSWR <=2.0 · Omni-Directional Design · 50ohm Impedance · Nominal Gain 0dBi · Omni-Directional Design

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3099 Unit in mm V H F - U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure. N F= 1.7dB, |S 2 ie l2 = 15dB f= 500MHz NF = 2.5dB, |S2 ie l2 = 9.5dB(f=lGHz) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3098 U nit in mm V H F— UHF B A N D LO W NOISE AM PLIFIER APPLICATIONS. + 0.5 2.5 - 0 . 3 + 0 .2 5 1 .5 - 0 .1 5 • Low Noise Figure. dd . NF = 2.5dB, |S2iel2= 14.5dB f= 500MHz +I Et . NF = 3.0dB, |S2 ie l2 = 9.0dB(f=lGHz)

2SC5593

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only RECTANGLE TYPE LED LAMPS Pb Lead-Free Parts LY45740/S21-PF DATA SHEET DOC. NO : REV. : DATE : QW0905- LY45740/S21-PF A 15 - Feb. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LY45740/S21-PF

GAAS FET AMPLIFIER for optical receiver

Abstract: transimpedance amplifier F0100504B F0321818M F0832483T FET differential amplifier circuit
Contextual Info: F0100504B 3.3V/5V 2.5Gbps Transimpedance Amplifier 02.09.02 Features F0100504B - 2.2kΩ high transimpedance - 29dB gain 3.3V/5V 2.5Gb/s NRZ Receiver - Low noise typ.6pΑ/√Ηz@100MHz Transimpedance Amplifier - Typical 1900MHz O/E Bandwidth - Over 25dB wide dynamic range

Contextual Info: Philips Semiconductors ^ 5 3 *1 3 1 DQ31SQ1? M>41 M A P X ^^roductspecitication NPN 6 GHz wideband transistor “ DESCRIPTION BFQ22S N AUER PHILIPS/DISCRETE b'lE T> PINNING NPN transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the

Contextual Info: Q 0 E S 3 C1S TOM • APX ^53^31 Philips Semiconductors N AUER PHILIPS / D I S CR E T E b?E Product specification J> PNP 5 GHz wideband transistor DESCRIPTION £ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF

IC HX 710

Abstract: 2SC4592 Hitachi DSA00333
Contextual Info: 2SC4592 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter 2SC4592 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage

Contextual Info: 2SC5544 Silicon NPN Epitaxial VHF / UHF wide band amplifier REJ03G0746-0200 Previous ADE-208-691 Rev.2.00 Aug.10.2005 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • Capable low voltage operation ; (VCE = 1V) Outline RENESAS Package code: PUSF0003ZA-A

2SC5321

Contextual Info: 2SC5321 TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5321 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • • Low Noise Figure High Gain NF = 1.4dB (f = 2GHz) |S2l e|2= 10dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

PREAMPLIFIER TRANSIMPEDANCE optic fet

Abstract: Um555 GAAS FET AMPLIFIER for optical receiver
Contextual Info: 01.08.28 ♦ Features F0100106B 3.3 V / 156 Mb/s Receiver • Low voltage of +3.3 V single power supply • 15.5 kΩ high transimpedance • Typical 250 MHz broad bandwidth • 31.5 dB high gain • 0 dBm large optical input • Over 35 dB wide dynamic range

2SC3607

Abstract: J505
Contextual Info: TO SH IBA 2SC3607 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3607 Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF= l.ldB, |S2iel2= 9.5dB f = 1GHz 1.7 MAX. Q4±a05 -0 = MAXIMUM RATINGS (Ta = 25°C)

str 1096

Abstract: 307-109 2SC5631
Contextual Info: 2SC5631 Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier REJ03G0128-0300Z Previous ADE-208-981A(Z Rev.3.00 Oct.20.2003 Features • High gain bandwidth product fT = 11 GHz typ. • High power gain and low noise figure ; PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHz

Contextual Info: AWL9565 802.11a/n Power Ampliier & Switch with 802.11 b/g/n RX/TX/ Bluetooth Switch Data Sheet - Rev 2.0 FEATURES • • • • • • • • • • • • • 3% Dynamic EVM @ Pout = +18 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps 30 dB of Linear Power Gain

2SC5544

Abstract: d 478 hitachi Hitachi DSA00234
Contextual Info: 2SC5544 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-691 Z 1st. Edition Nov. 1998 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • Capable low voltage operation ; (V CE = 1V) Outline MFPAK 3 1 2 Note: Marking is “YZ-”. 1. Emitter

Contextual Info: TOSHIBA 2SC3098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE n r ^ n Q R Unit in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS. +Q 5 3 . 5 —Q 3 + Q 35 1-5 —0.15 • Low Noise Figure. . NF = 2.5dB, |S2lel2—14.5dB f = 500MHz . NF = 3.0dB, |S2lel2= 9-0dB(f=lGHz)

Contextual Info: bDE D • 61331Ô7 OODOMTfl 37b ■ ■ SMLB SEMELAB SEMELAB PLC BDS 20 BDS 21 NEW PRODUCT SILICON EPITAXIAL BASE COMPLEMENTARY DARLINGTON POWER TRANSISTORS IN TO 220 PACKAGE M EC H A N IC A L DATA Dimensions in mm FEATURES • HERMETIC TO 220 METAL PACKAGE

Contextual Info: MITSUBISHI -CDGTL LOGIC! 11 Ô e | ¡=,24^057 0012104 S J M IT S U B IS H I c. V' -' 1 a STTLs M 74A S 21P .„. ^ ecÀ, , i\-j <r^ ' DUAL 4 -INPUT POSITIVE AND GATE DESCRIPTION PIN CONFIGURATION TOP VIEW The S21P is a semiconductor integrated circuit

etal m15

Abstract: HS28P-4 21J3
Contextual Info: HS SERIES SHELL SIZE 12-35mm TRADITIONAL CONNECTORS Introduction i -T he HS se ries is g en era lly ca lle d “ m etal co n necto r” , are em p lo ye d by N T T and set m anufacturers as stan­

MH-96

Contextual Info: T O SH IB A 2SC3606 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3606 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • . + 0 .5 2 .5 - 0 .3 Low Noise Figure, High Gain. NF = l.ldB, |S2iel2= HdB f=lGHz MAXIMUM RATINGS (Ta = 25°C)

2SC3607

Contextual Info: TOSHIBA 2SC3607 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3607 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF= l.ldB, |S2iel2= 9.5dB f = 1GHz 1.6 MAX. 4.6 MAX. 1.7 MAX. Q4±a05 M A X IM U M RATINGS (Ta = 25°C)

transimpedance amplifier 7.5 GHz

Abstract: transimpedance 10 M F0100404B F0311018S 125 khz ultrasonic RECEIVER CIRCUIT S21N ultrasonic RECEIVER CIRCUIT 10 MHz F010040
Contextual Info: 02.08.06 ♦ Features F0100404B 3.3V/5V 1.25 Gb/s Receiver • +3.3V or +5.0 V single power supply • transimpedance 600 Ω 50 Ω load • Typical 2200 MHz broad bandwidth • 16 dB high gain • Over 20 dB wide dynamic range • Differential output • Excellent equivalent input noise current