S21PJ2 Search Results

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3099 Unit in mm V H F - U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure. N F= 1.7dB, |S 2 ie l2 = 15dB f= 500MHz NF = 2.5dB, |S2 ie l2 = 9.5dB(f=lGHz) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3098 U nit in mm V H F— UHF B A N D LO W NOISE AM PLIFIER APPLICATIONS. + 0.5 2.5 - 0 . 3 + 0 .2 5 1 .5 - 0 .1 5 • Low Noise Figure. dd . NF = 2.5dB, |S2iel2= 14.5dB f= 500MHz +I Et . NF = 3.0dB, |S2 ie l2 = 9.0dB(f=lGHz)

2SC5321

Contextual Info: 2SC5321 TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5321 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • • Low Noise Figure High Gain NF = 1.4dB (f = 2GHz) |S2l e|2= 10dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C)

2SC3607

Abstract: J505
Contextual Info: TO SH IBA 2SC3607 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3607 Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF= l.ldB, |S2iel2= 9.5dB f = 1GHz 1.7 MAX. Q4±a05 -0 = MAXIMUM RATINGS (Ta = 25°C)

2SC5320

Contextual Info: TO SH IBA TENTATIVE 2SC5320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series • • + 0.5 2 .5 -0 .3 Low Noise Figure : NF = 1.4 dB (f = 2 GHz) High Gain

Contextual Info: TOSHIBA 2SC3098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE n r ^ n Q R Unit in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS. +Q 5 3 . 5 —Q 3 + Q 35 1-5 —0.15 • Low Noise Figure. . NF = 2.5dB, |S2lel2—14.5dB f = 500MHz . NF = 3.0dB, |S2lel2= 9-0dB(f=lGHz)

MH-96

Contextual Info: T O SH IB A 2SC3606 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3606 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • . + 0 .5 2 .5 - 0 .3 Low Noise Figure, High Gain. NF = l.ldB, |S2iel2= HdB f=lGHz MAXIMUM RATINGS (Ta = 25°C)

2SC3607

Contextual Info: TOSHIBA 2SC3607 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3607 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF= l.ldB, |S2iel2= 9.5dB f = 1GHz 1.6 MAX. 4.6 MAX. 1.7 MAX. Q4±a05 M A X IM U M RATINGS (Ta = 25°C)

2SC309

Abstract: 2SC3098 uPI Semiconductor
Contextual Info: TOSHIBA 2SC3098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3098 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. + a5 2.5 —0.3 • Low Noise Figure. . NF = 2.5dB, |S2lel2 —14.5dB f = 500MHz . NF = 3.0dB, |S2iel2 —9.0dB (f = 1GHz)

2SC3011

Contextual Info: 2SC3011 TOSHIBA 2SC3011 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm U H F-C BAND LO W NOISE AM PLIFIER APPLICATIONS. High Gain Low Noise Figure High fp |S2lel2= 12dB Typ. NF = 2.3dB (Typ.), f=lG H z fT = 6.5GHz 2 .5 + — 0 .5 0 .3 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: 2SC4840 SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm VH F-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF = l.ldB , |S2iel2= 13dB f=lGHz -EE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage

2SC5098

Abstract: 7420 PC
Contextual Info: TOSHIBA 2SC5098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5098 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. • N F = 1.8dB, |S2le |2= lOdB f=2G Hz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING

2SC5320

Contextual Info: TO SH IBA TENTATIVE 2SC5320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series • • + 0.5 2 .5 -0 .3 Low Noise Figure : NF = 1.4 dB (f = 2 GHz) High Gain

2SC3606

Abstract: c3c3 transistor
Contextual Info: TOSHIBA 2SC3606 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3606 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. + 0 .5 2 . 5 - 0 .3 • Low Noise Figure, High Gain. . NF = l.ld B , |S 2lel 2—lld B f=lG H z M A X IM U M RATINGS (Ta = 25°C)