S1YB Search Results

Contextual Info: SHINDENGEN General Purpose Rectifiers S1YB60 600V 0.4A DIL Bridges OUTLINE DIMENSIONS Case : 1Y Unit : mm FEATURES Small Dual In-Line :DIL Package High reliability with superior moisture resistance Applicable to Automatic Insertion APPLICATION Switching power supply

Contextual Info: S1YB60B250C320 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current320 @Temp (øC) (Test Condition)40 V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.30 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)

SHINDENGEN DIODE

Abstract: S1Y DIODE B20s
Contextual Info: SHINDENGEN ELECTRIC MFG 54E D • fl2n3S7 0000445 405 » S H E J ■ S1YBD O U T L IN E D IM E N S IO N S P y h ie # D a te co d e\ 600V 0.4A E _Ot_ c73-.o fo + 3® k l 1 FI hi W1 Uw Tri : “I 1 ® IT ■ w ’ 5±02 0.6±01 1.0±01 0 .2 5 ± 0 1 ks*

Contextual Info: Bridoe Diodaf' ^ Dual In-line Package Hl&Tt&ŒI O U T L IN E D IM E N S IO N S S1YBD 600V 0.4A • lÈtèm R A TIN G S Absolute Maximum Ratings at s m O perating Ju n c tio n Tem perature -yr/LSg 1iBE Average Rectified Forward Current - t ± / l s f + - v 'H IB 'B i®

yb2 bridge diode

Abstract: 022G S1YB60 diode 351 marking code 351 diode DIODE marking 351
Contextual Info: デュアルインライン型 Bridge Diode Dual In-Line Package •外観図 OUTLINE S1YB60 Unit : mm Weight : 0.22g （typ.） Package：1Y 600V 0.4A ④ 品名略号 Type No. 特長 • 小型 DIP パッケージ • 耐久性に優れ高信頼性 ①

S3V 8* Rectifier

Abstract: s4vb s4vb 10 46 s4vb bridge rectifier
Contextual Info: Large Ifsm I-I S MD • — 0 .8 -1 A - 0 .4 -1 A 1-1.5A Bridge * • S I P - 4~6A *?i gDiodes j 1 0 -2 5 A * S Q IP ;• 2 .3 -2 0 A 2 -1 0 A 1 5 -5 0 A * SI ZB □ S1NB □ S1W B A D S1YB □ S1ZB □ S1NB □ S1 WB(A) □ S1VB □ D2SBA □ — D 2SBD L — Low Noise

SHINDENGEN DIODE

Contextual Info: K Bridge Diode_ Dual In-line Package OUTLINE DIMENSIONS S1YB 600V 0.4A •es*«* • SRSS 0 9 . 9 . OA. M mm. • m • Æ tè S i fa RATINGS Absolute Maximum Ratings m r Item ta m # Storage Temperature Operating Junction Temperature Maximum Reverse Voltage

yb2 bridge diode

Abstract: S1YB S1YB20 IT200 IT-200 S1YB60 J534
Contextual Info: デュアルインライン型 Bridge Diode Dual In-Line Package •外観図 OUTLINE S1YB□ Unit : mm Weight : 0.22g（typ.） Package：1Y ④ 600V 0.4A 品名略号 Type No. 特長 • 小型 DIP パッケージ • 耐久性に優れ高信頼性 ①

Contextual Info: 7 U 'y v 3 '< 7 t - - K Bridge Diode Dual In-line Package • S1YBD O U T L IN E D IM E N S IO N S Date code r- 600V 0.4A < 1 P -o + 3I- 5= Q.2 I I 'a 0.25± 0. 5.5±0-2 ■ 15JI R A T IN G S Absolute Maximum Ratings m Item a K# s -a -a s a Operating Junction Temperature

Contextual Info: Bridge Diode Dual In-Line Package OUTLINE S1YB60 ④ 600V 0.4A • • Unit : mm Weight : 0.22g typ. Package 1Y 品名略号 Type No. DIP ① ④− ＋① YB2 59 ロット記号（例） Date code ③ ② ③~ 5 Feature • Small-DIP • High-Reliability

Contextual Info: SHINDENGEN General Purpose Rectifiers S1YB20 200V 0.4A DIL Bridges OUTLINE DIMENSIONS Case : 1Y Unit : mm FEATURES Small Dual In-Line :DIL Package High reliability with superior moisture resistance Applicable to Automatic Insertion APPLICATION Switching power supply

DIODE N7

Abstract: B20s
Contextual Info: -j'j vvv'ds-v 7:n.7,ii>'fy:ÿ'fy§ë. Bridge Diode Dual In-Line Package •*WfN-äsH OUTLINE DIMENSIONS S1YB 600V 0.4A 43 f i • /j\iU D ip y v " ^ ir - y • B Ä ttic ffin s fllS tt « a ± * n îE o w c B , m e m m *z m m < rc -£ u MMfàM RATINGS

SHINDENGEN TR 222

Abstract: D2S860 D25VB60 F10LC20U S1WBA60B D15VBA d15vba60 D4SBA80 DF25SC6M d3sb60 86
Contextual Info: 1. • -« g a ff* * lo A V V rm (y \ ^ < 4 ^ 0.4 0.8 1 a» S1YB60 S1NB20 S1NB60 S1WBA60 S1WBA60B S1WBA20 S1VB20 S1NB80 1 1.4 S1WBA80Z 1.7 600 800 SHINDENGEN D2SBA20 D2SBA60 LN2SB60 D3B20 D3SBA20 U4SB20 D3SB60 D4SB80 D3SBA60 D4SBA80 D4SB80Z U4SB60 1.1 5

Contextual Info: S1YB10B40C320 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current320m @Temp (øC) (Test Condition)40 V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.30 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)

rectifier s1wb

Abstract: s1wb rectifier ic s1wb s1wb 60 48 S1NB60 55 smd IC IR 50
Contextual Info: Rectifier Diodes Low frequency rectifying DIP Bridge Diodes v /•C éw Conditions Ta I fsm V rm Tstg [A] [C l [A] IV ! L-.12L. S1YB20 S1YB60 S1ZB2Q 0.4 40 30 S1ZB60 S1ZB80 ☆ D1UBA80 0.8 25 30 1 25 30 1 25 30 1 26 50 1 25 Type No. S1NB20 S1NB60 S1NB80

Contextual Info: S1YB10B10C320 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current320 @Temp (øC) (Test Condition)40 V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.30 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)

Contextual Info: S1YB20B80C320 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current320 @Temp (øC) (Test Condition)40 V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.30 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)

7555-T

Abstract: M1FM3
Contextual Info: Al t hough we ar e cons t ant l ymak i ng ev er yef f or tt oi mpr ov et he qual i t yand r el i abi l i t yofourpr oduct s ,t her enev er t hel es sr emai nsacer t ai npr obabi l i t yt hatt he s emi conduct orpr oduct smayoccas i onal l yf ai lormal f unct

BA60

Abstract: rectifier s1wb Bridge diodes
Contextual Info: Rectifier Diodes Low Noise Bridge Diodes Electrical Characteristics Absolute Maximum Ratings rm lo Conditions [V] [A] [°C] V Part No. If s m Tstg Tj [A] [°C] [°C] Ir tre eil eja ejc Conditions max (max) (max) (max) (max) If V r=Vrm [A] [mA] Vf (max) To

1y smd

Abstract: rectifier s1wb smd 1N
Contextual Info: RECTIFIER DIODES Low-frequency rectifying 1W SMD Low Noise Bridge Diodes 1V 1W Absolute Maximum Ratings VRM Type No. LN1WBA60 LN1VB60 LN2SB60 LN4SB60 LN6SB60 *:Ta IFSM IO Tstg Electrical Characteristics Tj Conditions Tc [V] [A] [˚C] [A] 600 1.1 1.2 1.6

S1WB60

Abstract: SIWB RBV-1506 S1WB(A)60B 100C RBV-2506 RBV-602L RBV-604 RBV-606 RBV-606H
Contextual Info: - fé Wì £ tfc « PRSM CkW RBV-602L BBV-604 RBV-606 RBV-606H RBV-608 RBV-1506 RBV-2506 RM30TB-H RM30TB-M RM30TC-24 RM30TC-2H RM75TC-24 RM75TC-2H RM75TC-H RM75TC-M RM100D2Z—40 S1NB20 S1NB60 S1RBA10 S1RBA20 S1RBA20Z S1RBA40 S1RBA40Z S1RBA60 S1RBA80 S1VB20

Bridge diodes

Abstract: S1NB20
Contextual Info: R ectifier Diodes Low frequency rectifying Low Noise Bridge Diodes 1W 1V Absolute Maximum Ratings 2S Electrical Characteristics Vf Type No. V rm lo [V ] [A] Conditions I fsm Tstg Tj [A ] TC] ra Ir max Conditions Tc LN1WBA60 LN1VB60 LN2SB60 600 LN4SB60 LN6SB60

ba60

Abstract: S1WB S 80 08
Contextual Info: R ectifier Diodes Low freq u e n cy re c tify in g Lo w Noise B ridge Diodes Absolute Maximum Ratings Electrical Characteristics Ir Conditions max If V r = V rm [A] [*A] Tstg T| Tc fc ] [A] [*C] [”C] [V] I.I 25* 50 I.O 0.55 I0 65 — — IW 3I 1.2 25*

Solitron J775-2

Abstract: BT196 SS14 TOSHIBA 1n5822 TOSHIBA SS550 BT127 SE140 NSR8140S NBS25-400 1N4007 toshiba
Contextual Info: CROSS REFERENCE INDUSTRIAL R u t No. 10D05 iœ i îœ i 10D2 1 302 im 1004 10D4 10D6 10 6 IO » im 11DQ03 11DQ04 11DQ05 11DQ06 15B4B41 15D4B41 15G4B41 15J4B41 1B4B42 im a im o naco in n o 1G4B42 lHi 117 1BB 1J4B42 1*1217 1*12171 1K1217B 1N1218 1K1218A 1*12188