S1425 Search Results

11 pin 24 Volt DC relay

Abstract: 12 volt 5 pin relay s411 MOFT50 S111A 12 volt 6 pin relay MARKING BB1 MOFT20 S111 S1425
Contextual Info: Photoelectrics Amplifier Type S1425 • • • • • • • • Amplifier relay for photoelectric switches Sensitivity automatically adjusted Modulated and synchronized light 2 selectable frequencies on rotary switch Break switching function Supply voltage: 24 VDC, 24 VAC, 115 VAC, 230 VAC

SUD50P04-08

Contextual Info: SUD50P04-08 www.vishay.com Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -40 RDS(on) () ID (A) 0.0081 at VGS = -10 V -50 d 0.0117 at VGS = -4.5 V -48 d Qg (TYP.) 60 • TrenchFET power MOSFET • 100 % Rg and UIS tested

Contextual Info: SPICE Device Model SQJ910AEP www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model SQ3418EEV www.vishay.com Vishay Siliconix N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SL ‘ON B DATE JR & REV. Z 6 £ Z 0 I PS m nDR.0 m a & D E S C R IP T IO N DON NO. a m CHK. m & APPD. APPD. ON I M V H Q -è-SMH ±0.4 88.8 ±0.2 87.29 ±0 . 2 1.905 w 0 . 6 X t 0 .3 T X 2 4 - 1 2 0 R - 6 S T - E 1 E > < CONTACT N o . 60 CONTACT No. 1

514256-10

Abstract: HM514256 hitachi HM514256
Contextual Info: HM514256 Series 262144-word x 4-bit CMOS Dynamic RAM T h e H itachi H M 5 1 4 2 5 6 Series is a C M O S d y n a m ic R A M o r ­ ganized 2 6 2 1 4 4 -w o r d x 4-bit. H M 514256P Series H M 5 1 4 2 5 6 has realized higher density, higher perform ance and variou s fu n c tio n s b y e m p lo y in g

Contextual Info: SPICE Device Model SQ7414AEN www.vishay.com Vishay Siliconix N-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

nec label format

Abstract: NEC processor
Contextual Info: µPD98414 2.4Gbps ATM SONET FRAMER NEASCOT-P70TM NEASCOT-P70 device is a 2.4Gbits/s SONET STS-48c/ SDH STM-16c framer. The device performs all functions necessary to insert and extract ATM cells from STS-48c/ STM-16c frame. It is ideal for high-speed ATM switch of LAN or WAN.

HX8369

Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
Contextual Info: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010

S3043

Abstract: S3044
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

adsl splitter circuit diagram

Abstract: M7A transistor transistor M7A 10 M7A VR4120 uPD98451 pots telephone s14250ej1v0pf00
Contextual Info: µPD98453 PRELIMINARY Network Processor Features • Includes high performance MIPS based 64-bit RISC processor VR4120 TM • Supports operation conforming to the USB Communication Device Class Specification • Can perform RTOS and network middleware M/W on

Contextual Info: SPICE Device Model SQD50N04-5m6 www.vishay.com Vishay Siliconix N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SQD50P04-13L www.vishay.com Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET power MOSFET -40 RDS(on) () at VGS = -10 V 0.013 RDS(on) () at VGS = -4.5 V 0.022 ID (A) • Package with low thermal resistance

MDM 6600

Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
Contextual Info: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1

Contextual Info: SPICE Device Model Si8810EDB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

101490

Abstract: P22n HM50464P-12 50464 ram
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY

HYB514256A

Abstract: Q67100-Q490 514256A HYB514256 514256az
Contextual Info: a ô23SbOS 0 0 2 0 4 2 1 b B I S I E 6 SIEMENS AKTIENGESELLSCHAF SIE ^ 47E D ^ ' 2 3 - / 7 ì 4 HYB514256AL-60/-70 256K x 4-Bit Dynamic RAM Low Power Version Advance Information • 262 144 x 4-bit organization • Fast access and cycle time 60 ns access time

Contextual Info: µ PD98414 2.4Gbps ATM SONET FRAMER NEASCOT-P70 device is a 2.4Gbits/s SONET STS-48c/ SDH to insert and extract ATM cells from STS-48c/ STM-16c frame. STM-16c framer. The device performs all functions necessary Applications include switches, routers, bridges.

Contextual Info: SPICE Device Model Si3429EDV www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C