SI3429EDV Search Results
SI3429EDV Datasheets (1)
Vishay Siliconix
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI3429EDV-T1-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 20V TSOP6S | Original | 249.91KB |
SI3429EDV Price and Stock
Vishay Intertechnologies
Vishay Intertechnologies SI3429EDV-T1-GE3Trans MOSFET P-CH 20V 8A 6-Pin TSOP T/R |
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SI3429EDV-T1-GE3 | 6,000 | 6,000 |
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| SI3429EDV-T1-GE3 | 4,660 | 44 |
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SI3429EDV-T1-GE3 | Tape & Reel | 52 Weeks | 6,000 |
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SI3429EDV-T1-GE3 | Cut Strips | 4,660 | 14 Weeks | 1 |
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| SI3429EDV-T1-GE3 | Tape & Reel | 6,000 |
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SI3429EDV-T1-GE3 | Reel | 6,000 |
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SI3429EDV-T1-GE3 | 3,000 |
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SI3429EDV-T1-GE3 | Tape & Reel | 3,000 | 3,000 |
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SI3429EDV-T1-GE3 | 53 Weeks | 3,000 |
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SI3429EDV Datasheets Context Search
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Contextual Info: Si3429EDV www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) MAX. ID (A) a, e 0.0210 at VGS = -4.5 V -8 0.0240 at VGS = -2.5 V -8 0.0380 at VGS = -1.8 V -8 Qg (TYP.) 43.2 nC D 6 • 100 % Rg tested |
Original |
si3429edvsi3429eelectronic2002/95/ec2011/65/eu+2 | |
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Contextual Info: SPICE Device Model Si3429EDV www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
Original |
si3429edv2002/95/ec2011/65/eujs709a+1 |