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    SI3429EDV Search Results

    SI3429EDV Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI3429EDV-T1-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 20V TSOP6S Original PDF 249.91KB
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    SI3429EDV Price and Stock

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    Vishay Siliconix SI3429EDV-T1-GE3

    MOSFET P-CH 20V 8A/8A 6TSOP
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    DigiKey () SI3429EDV-T1-GE3 Digi-Reel 4,492 1
    • 1 $0.57
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    SI3429EDV-T1-GE3 Cut Tape 4,492 1
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    SI3429EDV-T1-GE3 Reel 3,000 3,000
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    Vishay Intertechnologies SI3429EDV-T1-GE3

    P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI3429EDV-T1-GE3)
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    Avnet Americas SI3429EDV-T1-GE3 Reel 19 Weeks 6,000
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    Mouser Electronics SI3429EDV-T1-GE3 9,345
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    Verical () SI3429EDV-T1-GE3 6,000 6,000
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    SI3429EDV-T1-GE3 5,975 60
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    Arrow Electronics () SI3429EDV-T1-GE3 6,000 19 Weeks 6,000
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    SI3429EDV-T1-GE3 Cut Strips 5,975 19 Weeks 1
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    Newark SI3429EDV-T1-GE3 Reel 6,000
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    TTI SI3429EDV-T1-GE3 Reel 3,000 3,000
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    EBV Elektronik SI3429EDV-T1-GE3 20 Weeks 3,000
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    Vishay Intertechnologies SI3429EDV-T1-GE3 (TRENCHFET)

    Mosfet, P-Ch, 20V, 8A, Tsop Rohs Compliant: Yes |Vishay SI3429EDV-T1-GE3
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    Newark SI3429EDV-T1-GE3 (TRENCHFET) Cut Tape 6,105 5
    • 1 $0.66
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    SI3429EDV Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Si3429EDV www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) MAX. ID (A) a, e 0.0210 at VGS = -4.5 V -8 0.0240 at VGS = -2.5 V -8 0.0380 at VGS = -1.8 V -8 Qg (TYP.) 43.2 nC D 6 • 100 % Rg tested


    Original     		Si3429EDV Si3429Eelectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SPICE Device Model Si3429EDV www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		Si3429EDV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF