S1413 Search Results

FR4 Prepreg

Abstract: FR4 Prepreg for RF 06 layer PCB S2254 S2528
Contextual Info: DATA SHEET SKY67002-396LF: 1.6-2.1 GHz High Linearity, Active Bias Low-Noise Amplifier Applications • GSM, CDMA, WCDMA, TD-SCDMA cellular infrastructure • Ultra low-noise systems • Balanced, single-ended low-noise amplifier designs RF_IN Features VBIAS

Contextual Info: DATA SHEET SKY67153-396LF: 0.7 to 3.8 GHz Ultra Low-Noise Amplifier Applications • LTE, GSM, WCDMA, HSDPA macro and micro base stations  L and S band ultra low-noise receivers  Cellular repeaters, DAS and RRH/RRUs  High temperature transceiver applications to +105 °C

RRUS 32

Contextual Info: DATA SHEET SKY67151-396LF: 0.7 to 3.8 GHz Ultra Low-Noise Amplifier Applications • LTE, GSM, WCDMA, HSDPA macro and micro base stations  L and S band ultra low-noise receivers  Cellular repeaters, DAS and RRH/RRUs  High temperature transceiver applications to +105 °C

S1495

Abstract: rf amplifier 10 ghz s1498 S1490 SKY65047 S1487 S1489 s1493
Contextual Info: PRELIMINARY DATA SHEET SKY65047-360LF: 0.4-3.0 GHz Low Noise Amplifier Applications Description • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations • Test instrumentation • Satellite receivers • Paging • Remote metering • WLL and ISM receivers

Contextual Info: SiHU3N50DA www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness

Contextual Info: DATA SHEET SKY65048-360LF: 0.7-1.2 GHz Low Noise Amplifier Applications InterStage Match x Wireless infrastructure: GSM, CDMA, WCDMA, ISM, and TD-SCDMA x Ultra-low noise applications Figure 1. SKY65048-360LF Block Diagram Features x Ultra-low Noise Figure = 0.65 dB @ 900 MHz

Si2338DS

Contextual Info: SPICE Device Model Si2338DS www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model SiR804DP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model Si2303CDS www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model Si2343CDS www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C

NF 848

Contextual Info: DATA SHEET SKY67101-396LF: 0.4 to 1.2 GHz High Linearity, Active Bias Low-Noise Amplifier Applications • GSM, CDMA, WCDMA, and TD-SCDMA cellular infrastructure  Ultra low-noise systems RF_OUT/VDD RF_IN FEEDBACK Features Active Bias RFGND  Ultra-low-noise figure: 0.57 dB @ 0.9 GHz

Contextual Info: Part Number To Factory Code Cross Reference Cross Reference Guide P art Nu n b a r Facto ry Cada Page P art Num ber Facto ry Carla Paga P art Number Factory Coda Paga P art Number Factory Coda 4-40-UN C 2 A X 3 /4 4 6 2 12 2 2 0 7 5 5 4 2 35 57-2 0 3 6 0 -1 0

S1495

Abstract: rf amplifier 10 ghz s1498 NFC81 s1493 S1498 2450 MHz low noise amplifier schematic S1487 S1489 S1490 S1488
Contextual Info: DATA SHEET SKY65047-360LF: 0.4-3.0 GHz Low-Noise Amplifier Applications Description • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations  Test instrumentation  Satellite receivers  Paging  Remote metering  WLL and ISM receivers

murata REEL label

Abstract: MXA agilent s1413 amplifier diagram N4001A N9020A S1500 S1577 VT47 S14-1
Contextual Info: DATA SHEET SKY65084-360LF: 1.5-2.4 GHz Low Noise Amplifier Applications InterStage Match • Wireless infrastructure: GSM, CDMA, WCDMA, and TD-SCDMA  Ultra low-noise applications Features Figure 1. SKY65084-360LF Block Diagram  Ultra-low Noise Figure = 0.70 dB @ 1.95 GHz

MURATA GJM

Abstract: Agilent RF amplifier QFN MURATA GRM
Contextual Info: DATA SHEET SKY65040-360LF: 1.7-2.4 GHz Low Noise Amplifier Applications InterStage Match • Wireless infrastructure: GSM, CDMA, WCDMA, and TD-SCDMA • Ultra low-noise applications Features Figure 1. SKY65040-360LF Block Diagram • Ultra-low Noise Figure = 0.65 dB @ 1.95 GHz

Contextual Info: DATA SHEET SKY65037-360LF: 0.7-1.2 GHz Low Noise Amplifier Applications InterStage Match • Wireless infrastructure: GSM, CDMA, WCDMA, ISM, and TD-SCDMA • Ultra-low noise applications Figure 1. SKY65037-360LF Block Diagram Features • Ultra-low Noise Figure = 0.60 dB @ 850 MHz

Murata GRM1555c

Abstract: S1513 Murata GJM1555c
Contextual Info: DATA SHEET SKY65049-360LF: 1.7-2.4 GHz Low Noise Amplifier Applications InterStage Match • Wireless infrastructure: GSM, CDMA, WCDMA, and TD-SCDMA • Ultra-low noise applications Features Figure 1. SKY65049-360LF Block Diagram • Ultra-low Noise Figure = 0.7 dB @ 2.0 GHz

Contextual Info: Si7236DP www.vishay.com Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) a 0.0052 at VGS = 4.5 V 60 0.0070 at VGS = 2.5 V 60 VDS (V) 20 Qg (nC) TYP. 31 D2 5 D1 D1 8 7 6. 15 m m 1 5 5.1 mm Top View • Material categorization:

Contextual Info: SiHD3N50DA www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness

aeg aas

Contextual Info: CMOS M IT E L MT9315 Acoustic Echo Canceller Advance Information SEMICONDUCTOR DS5038 Features ISSUE 3 February 1999 O rdering In fo rm a tio n Contains two echo cancellers: 112ms acoustic echo canceller + 16ms line echo canceller MT9315AP MT9315AE Works with low cost voice codec. ITU-T G.711

Contextual Info: DATA SHEET SKY67153-396LF: 0.7 to 3.8 GHz Ultra Low-Noise Amplifier Applications • LTE, GSM, WCDMA, HSDPA macro and micro base stations  L and S band ultra low-noise receivers  Cellular repeaters, DAS and RRH/RRUs  High temperature transceiver applications to +105 °C

Contextual Info: SPICE Device Model SiA431DJ www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model Si2305CDS www.vishay.com Vishay Siliconix P-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the

Contextual Info: SPICE Device Model Si2319CDS www.vishay.com Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C