SI2319CDS Search Results

TSS 6672-1

Contextual Info: Si2319CDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

p7 marking

Abstract: SI2319CDS
Contextual Info: Si2319CDS Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A)a 0.077 at VGS = - 10 V - 4.4 0.108 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: SPICE Device Model Si2319CDS www.vishay.com Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C

Contextual Info: Si2319CDS Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A)a 0.077 at VGS = - 10 V - 4.4 0.108 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

marking code vishay SILICONIX

Contextual Info: Si2319CDS Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A)a 0.077 at VGS = - 10 V - 4.4 0.108 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si2319CDS

Abstract: SI2319CDS-T1GE3 S10 SOT23 MARKING
Contextual Info: Si2319CDS Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A)a 0.077 at VGS = - 10 V - 4.4 0.108 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: SPICE Device Model Si2319CDS Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Si2319CDS Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A)a 0.077 at VGS = - 10 V - 4.4 0.108 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Vishay Intertechnology, Inc. Industrial / Power Factory Automation One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Industrial / Power Factory Automation Motor Drives 4 Testers 5 Control Units 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay

Contextual Info: Vishay Intertechnology, Inc. Industrial / Power Factory Automation One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Industrial / Power ファクトリーオートメーション モータードライブ 4

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®