S1315 Search Results

Contextual Info: O S1315 P R E L IM IN A R Y DALLAS S1315 Phantom Time Chip SEMICONDUCTOR PIN ASSIGNMENT seconds, minutes, hours, days, date of the month, months, and years xi C X2 C WE C BAT1 C GND C • Adjusts for months with fewer than 31 days • Automatic leap year correction

Contextual Info: SIEMENS BUZ 76 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b flbSion Package Ordering Code BUZ 76 400 V 3A 1.8 £2 TO-220 AB C67078-S1315-A2 Maximum Ratings Parameter Symbol Continuous drain current Values b

C67078-S1315-A2

Contextual Info: BUZ 76 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 76 400 V 3A 1.8 Ω TO-220 AB C67078-S1315-A2 Maximum Ratings Parameter Symbol Continuous drain current

C67078-S1315-A2

Contextual Info: BUZ 76 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 76 A 400 V 2.7 A 2.5 Ω TO-220 AB C67078-S1315-A2 Maximum Ratings Parameter Symbol Continuous drain current

C67078-S1315-A2

Contextual Info: BUZ 76 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 76 400 V 3A 1.8 Ω TO-220 AB C67078-S1315-A2 Maximum Ratings Parameter Symbol Continuous drain current

siemens 3tb

Abstract: 3tb 50 siemens
Contextual Info: SIEMENS BUZ 76 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b ^DS on Package Ordering Code BUZ 76 A 400 V 2.7 A 2.5 Í2 TO-220 AB C67078-S1315-A2 Maxim um Ratings Parameter Symbol Continuous drain current Values

Contextual Info: SIEMENS BUZ 76 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 76 Vf S 400 V k> 3A ^4)S on) 1.8 Si Package Ordering Code TO-220 AB C67078-S1315-A2 Maximum Ratings Parameter Symbol Continuous drain current b Tc = 37 °C

si3040

Contextual Info: SIEMENS BUZ 76 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 76 A Vos 400 V *> 2.7 A ^3S on Package Ordering Code 2.5 n TO-220 AB C67078-S1315-A2 Maximum Ratings Parameter Symbol Continuous drain current Values

S1315

Abstract: C67078-S1315-A2
Contextual Info: BUZ 76 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 76 A 400 V 2.7 A 2.5 Ω TO-220 AB C67078-S1315-A2 Maximum Ratings Parameter Symbol Continuous drain current

SKY73126-31

Abstract: ID31 S1191 S1315 S1317
Contextual Info: DATA SHEET SKY73126-31: 161.92 MHz High Performance VCO/Synthesizer Applications Description x 3GPP Long-Term Evolution systems Skyworks SKY73126-31 Voltage-Controlled Oscillator VCO /Synthesizer is a fully integrated, high performance signal source for base station transceivers. The device provides low

Contextual Info: S1315 PRELIMINARY DALLAS SEMICONDUCTOR FEATURES S1315 Phantom Time Chip PIN ASSIGNMENT • Real time clock keeps track of hundredths of seconds, seconds, minutes, hours, days, date of the month, months, and years • Adjusts for months with fewer than 31 days

Contextual Info: S1315 PRELIMINARY DALLAS SEMICONDUCTOR FEATURES S1315 Phantom Time Chip PIN ASSIGNMENT seconds, m inutes, hours, days, date of the month, months, and years • Adjusts for months with fewer than 31 days • Autom atic leap ye a r correction valid up to 2100

SKY73126-31

Abstract: S1193 S1315 ID31 S1191 S-1315 S1317 PLL 2400 MHZ S1319
Contextual Info: DATA SHEET SKY73126-31: 161.92 MHz High Performance VCO/Synthesizer Applications Description • 3GPP Long-Term Evolution systems Skyworks SKY73126-31 Voltage-Controlled Oscillator VCO /Synthesizer is a fully integrated, high performance signal source for base station transceivers. The device provides low

W1A 93

Abstract: SI-3120C SI-3090CA 3050c 3090c 3120C 100C SI-3000C SI-3050C SI-3050CA
Contextual Info: SI — 3000C '> U — X f i f a » 'J 'M t D 5 S S i i / 'J - 1.5A X • ' / Í j i z - J í t , •7 —^ -V , ^ - ^ H t à È Ì r ^ - o T V ' S . ' J i ~ h l * * 5Ë f ê T , = 2 5 * C ) - • m * * I E i ± 5V , 9V , 1 2 V , 1 5 V , 24V <D 5

Contextual Info: SPICE Device Model SiR820DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the

Contextual Info: SPICE Device Model Si7141DP www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

SIS414DN

Contextual Info: SPICE Device Model SiS414DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiR818DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

IDT7MC4005

Abstract: IDT M22 dsip G1088
Contextual Info: 256K 16K x 16 CMOS STATIC RAM DUAL SIP MODULE FEATURES: IDT 7MC4005 The IDT7MC4005 Is a 16-bit wide 256K (16K X 16) Static RAM module constructed on a co-flred ceram ic substrate using four IDT7198 16K x 4 static RAMs in leadless chip carriers. Extremely

C4001

Abstract: S13-146
Contextual Info: 1 MEGABIT 1024KX 1-BIT CMOS STATIC RAM SIP MODULE PRELIMINARY IDT 7MC4001 FEATURES: DESCRIPTION: • H ig h -de n slty 1 m e g a b it (1024K x 1) C M O S sta tic RAM m odule • Surface m o un ted LCC c o m p o n e n ts m o un ted o n a co-fired c e ra m ic substrate

pin diagram of ic 4018

Abstract: ic 4018 IC 4018 DATA ES1989
Contextual Info: 64K x 6 C M O S STATIC RAM CERAMIC SIP MODULE W ITH SEPARATE DATA I/O ID T 7 M C 4 0 1 8 FEATURES: DESCRIPTION: • H ig h -de n sity 64K x 6 C M O S s ia lic RAM m o du le • S eparate d ata Inputs a n d o utp uts • C on fig u ra b le as 64K x 18 u sin g 3 m o du le s

DS1315

Contextual Info: S1315 PRELIMINARY DALLAS D S 1 3 1 5 Phantom Time Chip SEMICONDUCTOR FEATURES PIN ASSIGNMENT • Real time clock keeps track of hundredths of seconds, seconds, minutes, hours, days, date of the month, months, and years • Adjusts for months with fewer than 31 days

Contextual Info: SPICE Device Model SiR876ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SiHF15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.28 78 Qgs (nC) 9 Qgd (nC) 17 Configuration Single D TO-220 FULLPAK