SIR820DP Search Results
SIR820DP Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SIR820DP-T1-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 40A POWERPAKSO-8 | Original | 315.35KB |
SIR820DP Price and Stock
Vishay Intertechnologies SIR820DP-T1-GE3N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIR820DP-T1-GE3) |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SIR820DP-T1-GE3 | Tape & Reel | 52 Weeks | 3,000 |
|
Buy Now | |||||
|
SIR820DP-T1-GE3 | Reel | 3,000 |
|
Buy Now | ||||||
|
SIR820DP-T1-GE3 | 3,000 |
|
Get Quote | |||||||
|
SIR820DP-T1-GE3 | 53 Weeks | 3,000 |
|
Get Quote | ||||||
SIR820DP Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: SPICE Device Model SiR820DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the |
Original |
sir820dp2002/95/ec2011/65/eujs709a+1 | |
|
Contextual Info: New Product SiR820DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0030 at VGS = 10 V 40g 0.0038 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 28.6 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
Original |
sir820dp2002/95/ecsir820dp-t1-ge32011/65/eu+2 | |
|
Contextual Info: New Product SiR820DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0030 at VGS = 10 V 40g 0.0038 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 28.6 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
Original |
sir820dp2002/95/ecsir820dp-t1-ge32011/65/eu+2 | |
|
Contextual Info: SPICE Device Model SiR820DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the |
Original |
sir820dp11-mar-11 | |
15-Feb-10
Abstract: 67845 BVDSS
|
Original |
sir820dp2002/95/ecsir820dp-t1-ge32011/65/eu+4 | |
|
Contextual Info: SiR820DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
Original |
sir820dpan6098508m7985m+6 | |
|
Contextual Info: New Product SiR820DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0030 at VGS = 10 V 40g 0.0038 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 28.6 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition |
Original |
sir820dp2002/95/ecsir820dp-t1-ge311-mar-11 | |
|
Contextual Info: New Product SiR820DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0030 at VGS = 10 V 40g 0.0038 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 28.6 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
Original |
sir820dp2002/95/ecsir820dp-t1-ge311-mar-11 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
|
Original |
mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8 |