4249M Search Results

2SA1696

Abstract: 2SC4473 5A16 C4473 SA16 jc447
Contextual Info: Ordering number : EN 3017 2SA1696/2SC4473 No.3017 P N P/N PN Epitaxial P la n ar Silicon Transistors H igh-D efinition CRT Display Video O utput A pplications A p p lic a tio n s •High-definition CRT display video output, wide-band amp. F e a tu r e s • High fT :fT = 500MHz

IC CD 3102

Abstract: 2SC4451 cd 3102
Contextual Info: Ordering num ber : EN3102 No.3102 r _ 2 S C 4 4 5 1 NPN Triple Diffused Planar Silicon Transistor High-Voltage Switching Applications F eatures • High breakdown voltage • Small c0b • Wide ASO • High reliability Adoption of II VP process

2sa170

Abstract: 3094 npn 2SA1708 2SC448
Contextual Info: Ordering number:EN3094 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1708/2SC4488 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage, large current capacity. · Fast switching speed.

A1708

Abstract: c4488 C448f D4488 J4488 transistor 2sc4488 2SA1708 2SC4488 SC4488 2SA170E
Contextual Info: Ordering number: EN 3 0 9 4 2SA1708/2SC4488 No.3094 srnmrOi PN P/N PN Epitaxial P lanar Silicon Transistors High-Voltage Switching Applications h F e a tu r e s • Adoption of FBET, MBIT processes • H igh breakdow n voltage, large c u rren t capacity •F a st sw itching speed

Contextual Info: Ordering number:ENN3102 NPN Triple Diffused Planar Silicon Transistor 2SC4451 1500V/15mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage. · Small Cob. · Wide ASO. · High reliability Adoption of HVP process .

DBA40C

Abstract: DBA40 DBA40B DBA40E MM1089
Contextual Info: Ordering number:EN649C DBA40 Diffused Junction Silicon Diode 4.0A Single-Phase Bridge Rectifier Features Package Dimensions • Plastic molded structure. · Glass passivation for high reliability. · Peak reverse voltage:VRM=100 to 400V. · Average rectified current:IO=4.0A.

2SC4451

Abstract: ITR06967 ITR06968 ITR06969 ITR06970 ITR06971
Contextual Info: Ordering number:ENN3102 NPN Triple Diffused Planar Silicon Transistor 2SC4451 1500V/15mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage. · Small Cob. · Wide ASO. · High reliability Adoption of HVP process .

EUA SOT23-8

Abstract: SO-113 MAX4255EUK
Contextual Info: 19-1295; Rev 1; 1/98 A lilX I V M SOT23, Si ng l e- Suppl y, L o w -Noise, L o w - D i s t o r t i o n , R ai l - t o- Rai l Op A m p s _ F e a t u r e s The MAX4249-MAX4257 low-noise, low-distortion oper­ ational amplifiers offer Rail-to-Rail outputs and single­

Contextual Info: Ordering number:ENN3094 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1708/2SC4488 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage, large current capacity. · Fast switching speed.

EN3017

Contextual Info: Ordering number:EN3017 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1696/2SC4473 High-Definition CRT Display, Video Output Applications Applications Package Dimensions • High-definition CRT display video output, wide-band amplifier. unit:mm 2041 [2SA1696/2SC4473]

Contextual Info: Ordering number: EN 3 0 9 4 No.3094 J _ 2SA1708/2SC4488 PNP/NPN Epitaxial Planar Silicon Transistors S A iY O J High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity • Fast switching speed

FT500M

Contextual Info: Ordering number:EN3017 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1696/2SC4473 High-Definition CRT Display, Video Output Applications Applications Package Dimensions • High-definition CRT display video output, wide-band amplifier. unit:mm 2041 [2SA1696/2SC4473]

2SC4451

Abstract: EN3102
Contextual Info: Ordering number:EN3102 NPN Triple Diffused Planar Silicon Transistor 2SC4451 1500V/15mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage. · Small Cob. · Wide ASO. · High reliability Adoption of HVP process .

2SA1708

Abstract: 2sc4488 transistor 2sc4488 ITR04322 30945
Contextual Info: 2SA1708 / 2SC4488 Ordering number : EN3094A SANYO Semiconductors DATA SHEET 2SA1708 / 2SC4488 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage, large current capacity.

Contextual Info: Ordering num ber: EN3102 2SC4451 NPN Triple Diffused Planar Silicon Transistor 1500V/15mA High-Voltage Amp, High-Voltage Switching Applications Features • High breakdown voltage • Small Cob - Wide ASO • High reliability Adoption of II VP process Absolute Maximum Ratings at Ta = 25°C

2SA16

Abstract: 120Vmin 2SA1696 2SC4473 C4473 SA16 4473 transistor A1696
Contextual Info: Ordering number : EN 3017 2SA1696/2SC4473 No.3017 PN P/N PN Epitaxial Planar Silicon Transistor SANYO i High-Definition CRT Display Video Output Applications A p p licatio n s • H igh-definition CRT display video output, wide-band amp. F e a tu re s •H ig h f r : fr=500M H z

Contextual Info: Ordering number : EN3094B 2SA1708/2SC4488 Bipolar Transistor http://onsemi.com - 100V, (-)1A, Low VCE(sat), (PNP)NPN Single NMP Features • • • Adoption of FBET, MBIT processes High breakdown voltage, large current capacity Fast switching speed ( )2SA1708

EN649

Abstract: DBA40 DBA40B DBA40C DBA40E 649-1 diode N-100 SANYO
Contextual Info: Ordering number : EN649C N0.649C _ D B A 4 0 Diffused Ju n c tio n Silicon Diode 4.0A Single-Phase Bridge Rectifier F e a tu re s • P la stic m olded s tru c tu re • G lass p a ssiv a tio n for high re lia b ility • P e a k re v erse voltage : V r m = —100 to —400V

Contextual Info: 2SA1708 / 2SC4488 Ordering number : EN3094B SANYO Semiconductors DATA SHEET 2SA1708 / 2SC4488 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes High breakdown voltage, large current capacity