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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIS414DN-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 20A 1212-8 PPAK	Original	PDF		13

SIS414DN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SIS414DN Contextual Info: SPICE Device Model SiS414DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	sis414dn 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: New Product SiS414DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.016 at VGS = 4.5 V 20 0.020 at VGS = 2.5 V 20 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	sis414dn 2002/95/ec sis414dn-t1-ge3 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: New Product SiS414DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.016 at VGS = 4.5 V 20 0.020 at VGS = 2.5 V 20 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	sis414dn 2002/95/ec sis414dn-t1-ge3 2011/65/eu +2js709a 02-oct-12	PDF
sis414DN Abstract: 1047 diode Contextual Info: New Product SiS414DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.016 at VGS = 4.5 V 20 0.020 at VGS = 2.5 V 20 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	sis414dn 2002/95/ec sis414dn-t1-ge3 25lectual +218-jul-08 1047 diode	PDF
Contextual Info: New Product SiS414DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.016 at VGS = 4.5 V 20 0.020 at VGS = 2.5 V 20 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	sis414dn 2002/95/ec sis414dn-t1-ge3 2011/65/eu +112-mar-12	PDF
Contextual Info: New Product SiS414DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.016 at VGS = 4.5 V 20 0.020 at VGS = 2.5 V 20 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	sis414dn 2002/95/ec sis414dn-t1-ge3 11-mar-11	PDF
sis414 Abstract: SiS414DN PPAK 1212 SIS4 Contextual Info: New Product SiS414DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.016 at VGS = 4.5 V 20 0.020 at VGS = 2.5 V 20 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	sis414dn 2002/95/ec sis414dn-t1-ge3 2011/65/eu +412-mar-12 sis414 ppak 1212 sis4	PDF
Contextual Info: SPICE Device Model SiS414DN Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	sis414dn 18-jul-08	PDF
66804 Contextual Info: SiS414DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	sis414dn an609 2606m 6081m +67158m 6592m 6632m 3872u 0120m 66804	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF