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Samtec Inc


Samtec Inc ZSS-123-07-G-D-1140
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	ZSS-123-07-G-D-1140					1 - 10 $9.43 100 $6.40 1000 $4.31 10000 $4.31	Buy Now
Sager	ZSS-123-07-G-D-1140					1 - 10 - 100 - 1000 - 10000 -	Buy Now

S12307 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00200 at VGS = 10 V 50 0.00270 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8	Original	SiRA02DP SiRA02DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: New Product SiRA14DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.00510 at VGS = 10 V 20 0.00850 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.4 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • High Power Density DC/DC	Original	SiRA14DP SiRA14DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SUM55P06-19L Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A)d 0.019 at VGS = - 10 V - 55 0.025 at VGS = - 4.5 V - 48 Qg (Typ.) 76 • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see	Original	SUM55P06-19L O-263 SUM55P06-19L-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
A8483 Contextual Info: Si8483DB Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 e RDS(on) () (Max.) ID (A) 0.026 at VGS = - 4.5 V - 16 0.035 at VGS = - 2.5 V - 16 0.055 at VGS = - 1.8 V - 13 0.092 at VGS = - 1.5 V - 2.5 Qg (Typ.) 21 nC S • Load Switch for Smart Phones, Tablet PCs, and Mobile	Original	Si8483DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 A8483	PDF
Contextual Info: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00200 at VGS = 10 V 50 0.00270 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8	Original	SiRA02DP SiRA02DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
MOSFET, 3077 Abstract: 3077 mosfet Contextual Info: New Product SiRA14DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.00510 at VGS = 10 V 20 0.00850 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.4 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • High Power Density DC/DC	Original	SiRA14DP SiRA14DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 MOSFET, 3077 3077 mosfet	PDF
SIS443DN Abstract: Si7625DN S12307 Contextual Info: New Product SiS443DN Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. ID (A) 0.0117 at VGS = - 10 V - 35d 0.0160 at VGS = - 4.5 V - 35d • TrenchFET Power MOSFET • 100% Rg and UIS Tested • Material categorization:	Original	SiS443DN Si7625DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 Si7625DN S12307	PDF
375id Abstract: SiR872ADP mosfet 3079 Contextual Info: SiR872ADP Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)g 0.0180 at VGS = 10 V 53.7 0.0230 at VGS = 7.5 V 45 VDS (V) 150 Qg (Typ.) 22.8 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:	Original	SiR872ADP SiR872ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 375id mosfet 3079	PDF
Contextual Info: SiSA14DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)f, g Qg (Typ.) 20 9.4 nC 0.00510 at VGS = 10 V 30 0.00850 at VGS = 4.5 V • TrenchFET Gen IV Power MOSFET • 100 % Rg and UIS Tested • Material categorization:	Original	SiSA14DN SiSA14DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SiR872ADP Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)g 0.0180 at VGS = 10 V 53.7 0.0230 at VGS = 7.5 V 45 VDS (V) 150 Qg (Typ.) 22.8 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:	Original	SiR872ADP SiR872ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SiSA14DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)f, g Qg (Typ.) 20 9.4 nC 0.00510 at VGS = 10 V 30 0.00850 at VGS = 4.5 V • TrenchFET Gen IV Power MOSFET • 100 % Rg and UIS Tested • Material categorization:	Original	SiSA14DN SiSA14DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SiR872ADP Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)g 0.0180 at VGS = 10 V 53.7 0.0230 at VGS = 7.5 V 45 VDS (V) 150 Qg (Typ.) 22.8 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:	Original	SiR872ADP SiR872ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SUM110P08-11L Vishay Siliconix P-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 b RDS(on) () ID (A) 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 Qg (Typ) 85 nC • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see	Original	SUM110P08-11L O-263 SUM110P08-11L-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SUM110P08-11L rev Contextual Info: SUM110P08-11L Vishay Siliconix P-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 b RDS(on) () ID (A) 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 Qg (Typ) 85 nC • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see	Original	SUM110P08-11L O-263 SUM110P08-11L-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SUM110P08-11L rev	PDF