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    SIRA14DP Search Results

    SIRA14DP Datasheets (1)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIRA14DP-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 58A SO-8 Original PDF 9
    SF Impression Pixel

    SIRA14DP Price and Stock

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    Vishay Intertechnologies SIRA14DP-T1-GE3

    Trans MOSFET N-CH 30V 58A 8-Pin PowerPAK SO EP T/R
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    Verical SIRA14DP-T1-GE3 1,930 137
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    Avnet Americas SIRA14DP-T1-GE3 Tape & Reel 52 Weeks 3,000
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    Newark () SIRA14DP-T1-GE3 Bulk 2,242 1
    • 1 $1.24
    • 10 $0.62
    • 100 $0.56
    • 1000 $0.44
    • 10000 $0.35
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    SIRA14DP-T1-GE3 Tape & Reel 3,000
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    SIRA14DP-T1-GE3 Cut Tape 3,000
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    TTI SIRA14DP-T1-GE3 Reel 3,000 3,000
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    Bristol Electronics SIRA14DP-T1-GE3 2,830 1
    • 1 $0.64
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    Quest Components () SIRA14DP-T1-GE3 2,264
    • 1 $1.03
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    • 1000 $0.41
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    SIRA14DP-T1-GE3 2,264
    • 1 $0.86
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    SIRA14DP-T1-GE3 80
    • 1 $1.03
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    TME SIRA14DP-T1-GE3 1,930 1
    • 1 $1.04
    • 10 $0.58
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    Avnet Asia SIRA14DP-T1-GE3 54 Weeks 3,000
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    Component Electronics, Inc SIRA14DP-T1-GE3 50
    • 1 $9.23
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    EBV Elektronik SIRA14DP-T1-GE3 53 Weeks 3,000
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    Vishay Siliconix SIRA14DP-T1-GE3

    SEMICONCUCTOR, MOSFET;TRENCHFET;N-CHANNEL;30V;20A;5.1MOHM @ 10V;POWERPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SIRA14DP-T1-GE3 Bulk 3,000
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    Vishay Huntington SIRA14DP-T1-GE3

    MOSFET N-CH 30V 58A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SIRA14DP-T1-GE3 56,430
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    SIRA14DP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    63935

    Contextual Info: SPICE Device Model SiRA14DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		sira14dp2011/65/eu2002/95/ec12-mar-12+163935 PDF

    Contextual Info: New Product SiRA14DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.00510 at VGS = 10 V 20 0.00850 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.4 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • High Power Density DC/DC


    Original     		sira14dpsira14dp-t1-ge32002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: SiRA14DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. ID (A) a 0.00510 at VGS = 10 V 58 0.00850 at VGS = 4.5 V 45 Qg (TYP.) 9.4 nC D 5 D 6 • 100 % Rg and UIS tested • Material categorization:


    Original     		sira14dpsira14dp-t1-ge32002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: SPICE Device Model SiRA14DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		sira14dp2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: New Product SiRA14DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.00510 at VGS = 10 V 20 0.00850 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.4 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • High Power Density DC/DC


    Original     		sira14dpsira14dp-t1-ge32002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: SiRA14DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. ID (A) a 0.00510 at VGS = 10 V 58 0.00850 at VGS = 4.5 V 45 Qg (TYP.) 9.4 nC D 5 D 6 • 100 % Rg and UIS tested • Material categorization:


    Original     		sira14dpsira14dp-t1-ge32002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: SiRA14DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		sira14dpan6097151m6850u+50443m1908m2127m0229m13-jan-12 PDF

    MOSFET, 3077

    Abstract: 3077 mosfet
    Contextual Info: New Product SiRA14DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.00510 at VGS = 10 V 20 0.00850 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.4 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • High Power Density DC/DC


    Original     		sira14dpsira14dp-t1-ge32002/95/ec2011/65/eu+4js709a02-oct-12mosfet, 30773077 mosfet PDF

    Contextual Info: New Product SiRA14DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.00510 at VGS = 10 V 20 0.00850 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.4 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • High Power Density DC/DC


    Original     		sira14dpsira14dp-t1-ge32011/65/eu2002/95/ec+112-mar-12 PDF

    A2718

    Contextual Info: New Product SiRA14DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.00510 at VGS = 10 V 20 0.00850 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.4 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • High Power Density DC/DC


    Original     		sira14dpsira14dp-t1-ge32011/65/eu2002/95/ec+212-mar-12a2718 PDF

    Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:


    Original     		siz916dtsiz340dtsiz914dtvmn-pt0306-1402 PDF

    PowerPAK 1212-8

    Abstract: mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip
    Contextual Info: 2005-2012:QuarkCatalogTempNew 9/20/12 4:25 PM Page 2005 25 Rectifiers, MOSFETs and Optocouplers RoHS ᭤ Innovative Products That Represent a Cross Section of Vishays Very Broad Portfolio ᭤ Products Selected for Their Versatility in Several Key Applications


    Original     		vt1045bp-m3/4wvbt1045bp-e3/4wvft1045bp-m3/4wvt2045bp-m3/4w+16vbt2045bp-e3/4wvft2045bp-m3/4wvt3045bp-m3/4wvbt3045bp-e3/4wvft3045bp-m3/4wvt4045bp-m3/4wpowerpak 1212-8mosfet so8 smddip4powerpak so-8cny65 crosssisa12dn-t1-ge3smd-4cny66 crossvbt4045bp-e34 dip PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8si-4102si4599si4483asir166irfd120si7949si4459asir836 PDF

    POWERPAK SO8

    Abstract: SIS32
    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Ultra-Low RDS on with Next Generation Technology AND TEC I INNOVAT O L OGY TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V


    Original     		siz916dtvmn-pt0306-1209powerpak so8sis32 PDF