S1208 Search Results

S1208CBI

Abstract: GR-253 concatenated and OC-3 and STM-1 motorola 747
Contextual Info: EVROS ADVANCE Product Brief Part Number S1208CBI, August 2002 STS-12/STM-4 to DS3/E3/DS1/E1/J1/VT/TU SONET/SDH Mapper EVROS implements the highest density, standards compliant channelization of 622Mbps SONET/SDH an STS-12/STM-4 or quad STS-4/STM1 optical connections following SONET/SDH (STS-1 to VT/TU) or PDH (DS3/E3 to DS1/E1/J1) . It supports industry standard SONET/SDH to

AMCC s1208

Contextual Info: EVROS Product Brief Part Number S1208, Revision 3.3, August 2006 622Mbps/4x155Mbps to DS1/E1/J1 deep channelization SONET/SDH Framer-Mapper EVROS is a very high density OC-12/STM-4 or 4xOC-3/STM-1 SONET/SDH deep-channelization framer that performs standards-compliant

multiplexing e1 frame to e3 frame

Abstract: S1208CAI30 S1208 motorola 747 GR-253
Contextual Info: EVROS ADVANCE Product Brief Part Number S1208CAI30, Revision 3.0, November 2003 622Mbps/4x155Mbps to DS1/E1/J1 deep channelization SONET/SDH Framer-Mapper EVROS is a very high density OC-12/STM-4 or 4xOC-3/STM-1 SONET/SDH deep-channelization framer that performs standards-compliant

si5429

Abstract: marking G2 Si5429DU
Contextual Info: Si5429DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.015 at VGS = - 10 V - 12a 0.022 at VGS = - 4.5 V - 12a • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package

Contextual Info: New Product SiRA10DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30g 0.0050 at VGS = 4.5 V 30g Qg (Typ.) 15.4 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8

Contextual Info: Si2333DDS Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 12 RDS(on) () Max. ID (A)a 0.028 at VGS = - 4.5 V - 6e 0.032 at VGS = - 3.7 V - 6e 0.040 at VGS = - 2.5 V - 6e 0.063 at VGS = - 1.8 V - 4.5 0.150 at VGS = - 1.5 V

diode s1 77

Abstract: S124 diode s1 diode s1 74 socket s1 S1-100 S1-128
Contextual Info: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-118 S1-110 S1-103 S1-100 TTL1 TTL8 C3 B4 TTL11 C4 TTL13 C5 TTL15 C6 TTL16 C7 TTL17 C8 TTL19 C9 AGND C10 PVCC C11 TTL20 C12 TTL21 C13 TTL22 C14 TTL23 C15 TTL24 C16 TTL25 C17 PVCC C18 TTL26 C19 PVPP C20 TTL28

Contextual Info: Selection guide - March 2014 Si APD Avalanche Photodiode High-speed, high sensitivity photodiodes having an internal gain mechanism HAMAMATSU PHOTONICS K.K. S i A v a l a n c h e P h o t o d i o d e Si APD High-speed, high sensitivity photodiodes having an internal gain

scr 6A

Abstract: scr tag 2 200 S1610BM scr tag 12 TAG scr S2510 SCR 10A tag semiconductors triacs S0805BM S0805DM
Contextual Info: part Num ber D efinition ta g s e m ic o n d u c to r s l t d E xam ple T 10 10M H : T = Glass passivated Triac 1 0 = 10A 1 0 = I g T 2 5 / 2 5 / 2 5 / 2 5 mA M = 600 V H = T Q -22 0 T ech n olo gy C u rre n t R ange |Q T -C u rre n t R ang e V o lta g e P ac ka g e

S4811PBIC

Abstract: Kentrox AMCC s1212 hdlc S1212 Quick Eagle Networks DSLAM structure
Contextual Info: FINAL TIGRIS OC-48 Multi Protocol Termination for 2047 Channels Product FINAL BriefProduct Brief Number S4811PBIC PSIC, Rev. 2008 PartPart Number S4811PBIC PSIC, Rev. 2.5 2.5 JanJan 2008 TIGRIS is a high density data-termination device supporting 2047 channels operating at an aggregate rate of 2.488Gbps. The

AMCC PART MARKING

Abstract: NP3700 S4811 AMCC ppc CODE MARKING
Contextual Info: PRODUC T BRIEF nP3710 5-Gbps Network Processor with Integrated Traffic Manager • High integration: Significant form factor, cost, and power savings • Hardware-based Traffic Manager for guaranteed performance • Software compatibility with nP32xx, nP345x, nP36xx, nP37xx,

NTHS-1005

Abstract: NTHS-1205 S-1005N02 S-1012N02
Contextual Info: MODEL NTHS NTC Thermistors Surface Mount Chip FEATURES • W rapa rou nd te rm in a tio n s • A llo w s de sig n fle xib ility fo r use w ith hybrid circu itry • H igh-d en sity m on olithic ce ra m ic con stru ction • A va ila b le in 8m m tap e and reel packaging

63819

Contextual Info: New Product SiSA10DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30 0.0050 at VGS = 4.5 V 30 Qg (Typ.) 15.4 nC PowerPAK 1212-8 APPLICATIONS • High Power Density DC/DC

Contextual Info: Si5429DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.015 at VGS = - 10 V - 12a 0.022 at VGS = - 4.5 V - 12a • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package

si4714

Contextual Info: SPICE Device Model Si4714DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET with Shottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: MITSUBISHI LSIs MH51208TNA-85L,-10L,-12L,-15L/ MH51208TNA-8SH,-10H,-12H,-15H 4 1 9 4 3 0 4 -B IT 5 2 4 2 8 8 -W 0 R D B Y 8 -B IT C M 0 S STA TIC RAM DESCRIPTION The M H51208TN A is a 4194304 bits CMOS static RAM module organized as 524288-words by 8-bits. It consists

AMCC PART MARKING

Abstract: AMCC s1212 MPLS s1212 danube Multilink Technology Corporation AMCC Evros S3455 S4805 RFC-1990
Contextual Info: PRODUC T BRIEF MISSION Multi-Service Inter-Networking Solution Features Complete Multi-Service Solution • Deeply channelized interfaces • High-density HDLC support • Layer 2 protocol inter-networking • Modular and extensible architecture System Level Approach

Contextual Info: Si8439DB Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () Max. (A)a, e ID 0.025 at VGS = - 4.5 V - 9.2 0.030 at VGS = - 2.5 V - 8.4 0.037 at VGS = - 1.8 V - 7.6 0.061 at VGS = - 1.5 V - 5.9 0.125 at VGS = - 1.2 V

Contextual Info: New Product SiR788DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 30 0.0034 at VGS = 10 V 60 0.0043 at VGS = 4.5 V 60 Qg (Typ.) 24 nC PowerPAK SO-8 • SkyFET® Monolithic TrenchFET® Gen III

AMCC DATE CODE MARKING

Abstract: amcc part marking DS2018 S1220PBIC S1220 SCP68 VDDH25 s1220PB
Contextual Info: Part Number S1220 Revision 3.03 – May 25, 2007 S1220 Advance Data Sheet SONET/SDH/ATM Quad OC-3/12 with Clock Data Recovery CDR FEATURES • • • • • • • • • • • • • • APPLICATIONS CMOS 0.13 micron technology Complies with Bellcore and ITU-T specifications for jitter tolerance, jitter transfer, and jitter

Contextual Info: Si1028X Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A) 0.650 at VGS = 10 V 0.48 0.770 at VGS = 4.5 V 0.45 Qg (Typ.) 0.5 • • • • TrenchFET Power MOSFET 100 % Rg Tested ESD Protected: 550 V Typical HBM

HX8369

Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
Contextual Info: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010

Contextual Info: Si1539DL Vishay Siliconix Complementary 30 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

Contextual Info: SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 650 RDS(on) max. at 25 °C () VGS = 10 V 0.340 Qg (Max.) (nC)