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SIRA10DP Datasheets (1)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIRA10DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 60A SO-8	Original	PDF		9

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Vishay Intertechnologies SIRA10DP-T1-GE3 Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	SIRA10DP-T1-GE3		1,000		77	1 - 10 - 100 $0.71 1000 $0.57 10000 $0.57	Buy Now
	SIRA10DP-T1-GE3		159		15	1 - 10 - 100 $0.44 1000 $0.44 10000 $0.44	Buy Now
Avnet Americas	SIRA10DP-T1-GE3	Tape & Reel		52 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.40	Buy Now
Arrow Electronics	SIRA10DP-T1-GE3	Cut Strips	159	52 Weeks	1	1 $0.44 10 $0.42 100 $0.41 1000 $0.41 10000 $0.41	Buy Now
Newark ()	SIRA10DP-T1-GE3	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.45	Buy Now
	SIRA10DP-T1-GE3	Cut Tape			3,000	1 - 10 - 100 - 1000 - 10000 $0.59	Buy Now
TTI	SIRA10DP-T1-GE3	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.45	Buy Now

TME	SIRA10DP-T1-GE3		1,000		1	1 $1.55 10 $1.02 100 $0.65 1000 $0.50 10000 $0.50	Buy Now
Avnet Asia	SIRA10DP-T1-GE3			54 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SIRA10DP-T1-GE3			15 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SIRA10DP-T1-GE3 SEMICONCUCTOR, MOSFET;TRENCHFET;N-CHANNEL;30V;30A;3.7MOHM @ 10V;POWERPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SIRA10DP-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $1.25	Get Quote

SIRA10DP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: New Product SiRA10DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30g 0.0050 at VGS = 4.5 V 30g Qg (Typ.) 15.4 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8	Original	sira10dp sira10dp-t1-ge3 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: SPICE Device Model SiRA10DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	sira10dp 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: SiRA10DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (MAX.) ID (A) a, g 0.0037 at VGS = 10 V 60 g 0.0050 at VGS = 4.5 V g 60 Qg (TYP.) 15.4 nC PowerPAK SO-8 Single D 5 D 6 D 7 D 8 • TrenchFET® Gen IV power MOSFET	Original	sira10dp sira10dp-t1-ge3 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: New Product SiRA10DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30g 0.0050 at VGS = 4.5 V 30g Qg (Typ.) 15.4 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8	Original	sira10dp sira10dp-t1-ge3 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
SiRA10DP Contextual Info: New Product SiRA10DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30g 0.0050 at VGS = 4.5 V 30g Qg (Typ.) 15.4 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8	Original	sira10dp sira10dp-t1-ge3 2011/65/eu 2002/95/ec +112-mar-12	PDF
Contextual Info: SiRA10DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (MAX.) ID (A) a, g 0.0037 at VGS = 10 V 60 g 0.0050 at VGS = 4.5 V g 60 Qg (TYP.) 15.4 nC PowerPAK SO-8 Single D 5 D 6 D 7 D 8 • TrenchFET® Gen IV power MOSFET	Original	sira10dp sira10dp-t1-ge3 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: SiRA10DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	sira10dp an609 2338m 7624u +62250m 2783m 2650m 8961m 8993u 17-feb-12	PDF
Contextual Info: New Product SiRA10DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30g 0.0050 at VGS = 4.5 V 30g Qg (Typ.) 15.4 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8	Original	sira10dp sira10dp-t1-ge3 2011/65/eu 2002/95/ec +112-mar-12	PDF
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:	Original	siz916dt siz340dt siz914dt vmn-pt0306-1402	PDF
PowerPAK 1212-8 Abstract: mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip Contextual Info: 2005-2012:QuarkCatalogTempNew 9/20/12 4:25 PM Page 2005 25 Rectifiers, MOSFETs and Optocouplers RoHS ᭤ Innovative Products That Represent a Cross Section of Vishays Very Broad Portfolio ᭤ Products Selected for Their Versatility in Several Key Applications	Original	vt1045bp-m3/4w vbt1045bp-e3/4w vft1045bp-m3/4w vt2045bp-m3/4w +16vbt2045bp-e3/4w vft2045bp-m3/4w vt3045bp-m3/4w vbt3045bp-e3/4w vft3045bp-m3/4w vt4045bp-m3/4w powerpak 1212-8 mosfet so8 smd dip4 powerpak so-8 cny65 cross sisa12dn-t1-ge3 smd-4 cny66 cross vbt4045bp-e3 4 dip	PDF
v0615a Contextual Info: Vishay Intertechnology, Inc. Computer Stationary Computing One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer Stationary Computing Servers 4 Embedded Systems 5 Solid-State Discs SSDs 6 UPS 7	Original	j-std-020 sc-70 wsl1206 vmn-ms6761-1212 +1v0615a	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF
POWERPAK SO8 Abstract: SIS32 Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Ultra-Low RDS on with Next Generation Technology AND TEC I INNOVAT O L OGY TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V	Original	siz916dt vmn-pt0306-1209 powerpak so8 sis32	PDF
SMD resistors codes Contextual Info: Vishay Intertechnology, Inc. Computer Stationary Computing One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer デスクトップPC サーバー 4 組み込み型システム 5 SSD（ソリッドステートディスク） 6	Original	j-std-020 sc-70 wsl1206 vmn-ms6792-1304-cosc +1smd resistors codes	PDF