S1205 Search Results

Contextual Info: Si APD S12053-02/-05/-10 S9075, S5344, S5345 Short wavelength type APD, for 600 nm band These are short wavelength APDs with improved sensitivity in the UV to visible range. They offer high gain, high sensitivity, and low noise in the short wavelength range. They are suitable for applications such as low-light-level measurement and

Contextual Info: Si APD S12053-02/-05/-10 S9075, S5344, S5345 短波長タイプAPD600 nm 帯用APD 紫外～可視光域の感度を向上させた短波長用APDです。短波長域で高い増倍率が得られ、高感度・低ノイズを実現してい ます。微弱光計測・分析機器などの用途に適しています。

S1205NH

Abstract: S1205BH S1205MH S1205N S1205DH IT36
Contextual Info: TAG SEMICONDUCTORS *8834750 TAG ¡3 LTD SEMI CONDU CT OR S 63C L TD TAG SEMICONDUCTORS LTD D Ë T | f lô 3 4 7 S O □□DD7Mfl T - 00748 S1205BH S1205NH S C R 'S / 12A 200-800V < 5m A A T h e S 12 0 5 se rie s s ilic o n c o n tro lled re c tifie rs are h ig h p e rfo rm a n ce g la s s

Contextual Info: SQM120N04-1m9 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 40 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.0019

Contextual Info: SQD50N04-4m1 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • 40 RDS(on) () at VGS = 10 V 0.0041 ID (A) 50 Configuration Single TO-252 TrenchFET Power MOSFET Package with Low Thermal Resistance

SIA461DJT1GE3

Abstract: 63838 sia461djt
Contextual Info: New Product SiA461DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. - 20 ID (A)a 0.033 at VGS = - 4.5 V - 12 0.042 at VGS = - 2.5 V - 12 0.055 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® SC-70 Package

CRC-10

Abstract: PD98401AGD-MML
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD98401A ATM SAR CHIP DESCRIPTION The µPD98401A NEASCOT-S15TM is a high-performance SAR chip that segments and reassembles ATM cells. This chip can interface with an ATM network when it is included in a workstation, computer, front-end processor,

diode s1 77

Abstract: S124 diode s1 diode s1 74 socket s1 S1-100 S1-128
Contextual Info: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-118 S1-110 S1-103 S1-100 TTL1 TTL8 C3 B4 TTL11 C4 TTL13 C5 TTL15 C6 TTL16 C7 TTL17 C8 TTL19 C9 AGND C10 PVCC C11 TTL20 C12 TTL21 C13 TTL22 C14 TTL23 C15 TTL24 C16 TTL25 C17 PVCC C18 TTL26 C19 PVPP C20 TTL28

s1207dh

Abstract: S1207MH S1207BH TRIAC TAG 90 S0402NH S0805NH opto diac X0303DG X0402DE S0802MH
Contextual Info: part Num ber D efinition ta g s e m ic o n d u c to r s l t d E xam ple T 10 10M H : T = Glass passivated Triac 1 0 = 10A 1 0 = I g T 2 5 / 2 5 / 2 5 / 2 5 mA M = 600 V H = T Q -22 0 T ech n olo gy C u rre n t R ange |Q T -C u rre n t R ang e V o lta g e P ac ka g e

Contextual Info: Selection guide - March 2014 Si APD Avalanche Photodiode High-speed, high sensitivity photodiodes having an internal gain mechanism HAMAMATSU PHOTONICS K.K. S i A v a l a n c h e P h o t o d i o d e Si APD High-speed, high sensitivity photodiodes having an internal gain

scr 6A

Abstract: scr tag 2 200 S1610BM scr tag 12 TAG scr S2510 SCR 10A tag semiconductors triacs S0805BM S0805DM
Contextual Info: part Num ber D efinition ta g s e m ic o n d u c to r s l t d E xam ple T 10 10M H : T = Glass passivated Triac 1 0 = 10A 1 0 = I g T 2 5 / 2 5 / 2 5 / 2 5 mA M = 600 V H = T Q -22 0 T ech n olo gy C u rre n t R ange |Q T -C u rre n t R ang e V o lta g e P ac ka g e

NTHS-1005

Abstract: NTHS-1205 S-1005N02 S-1012N02
Contextual Info: MODEL NTHS NTC Thermistors Surface Mount Chip FEATURES • W rapa rou nd te rm in a tio n s • A llo w s de sig n fle xib ility fo r use w ith hybrid circu itry • H igh-d en sity m on olithic ce ra m ic con stru ction • A va ila b le in 8m m tap e and reel packaging

Contextual Info: SQD50N04-4m1 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • 40 RDS(on) () at VGS = 10 V 0.0041 ID (A) 50 Configuration Single TO-252 TrenchFET Power MOSFET Package with Low Thermal Resistance

E 78998

Contextual Info: Unshroudecfl Headers 2.54 x 2.54 mm 0.100 x 0.100 in. Centerlines BergStik II Headers BergCon® System Specifications Features Options • 1-Row: 1 through 36 total positions. 2-Row: 2 through 72 total positions. 3-Row: 9 through 108 total positions. ■ Advanced ground.

Contextual Info: SiS468DN Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) () (Max.) ID (A)f 0.0195 at VGS = 10 V 30g 0.0210 at VGS = 7.5 V 30g 0.0320 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 8.7 nC PowerPAK 1212-8 S 3.30 mm

Contextual Info: New Product SiRA14DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.00510 at VGS = 10 V 20 0.00850 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.4 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • High Power Density DC/DC

E-3067

Contextual Info: PRODUCT NUMBER NO. OF COLS TOTAL NO. OF POS. 79806-XXXXX 42 168 ZZ7 .003:1 REVISIONS E C N /D O R # V30272 V30598 V50270 3/10/95 4/21/93 SAR 3/10/95 SHEET INDEX DATE NOTE 3 ,oo± .01 /.o± .3 .Q00±.005/.00±.13 •0000± .0020/.OOOi .051 cr±7 NOTE; THIS DOCUMENT IS THE PROPERTY OF AND EMBODIES PROPRIETARY INFORMATION OF THE BERG ELECTRONICS. INC.

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

Contextual Info: New Product Si1442DH Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 a RDS(on) () (Max.) ID (A) 0.020 at VGS = 4.5 V 4 0.024 at VGS = 2.5 V 4 0.030 at VGS = 1.8 V 4 Qg (Typ.) 13.1 nC • TrenchFET Power MOSFET • 100 % Rg Tested

63826

Contextual Info: New Product Si4190ADY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A)a 0.0088 at VGS = 10 V 18.4 100 0.0094 at VGS = 7.5 V 17.8 0.0120 at VGS = 4.5 V 15.8 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Contextual Info: SQM50N04-4m1 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • 40 RDS(on) () at VGS = 10 V 0.0041 ID (A) 50 Configuration Single TO-263 TrenchFET Power MOSFET Package with Low Thermal Resistance

Contextual Info: New Product SiJ482DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A) a, g Qg (Typ.) 0.0062 at VGS = 10 V 0.0065 at VGS = 7.5 V 80 60 24 nC 0.0095 at VGS = 4.5 V TrenchFET Power MOSFET 100 % Rg and UIS Tested

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

Contextual Info: PCB to wire connectors HC3 Female housings for 0 1.15 mm terminals Features • 2 to 15 position housings available • Single row 3.2 mm pitch • Integrated secondary lock • Mechanical polarization Part Numbers No. of Position Terminal size Polarization