S12 MARKING CODE DIODE Search Results

Philips MARKING CODE

Abstract: Datasheets for BB132 varicap marking code W1 BAT18 A2p sot143 marking code A5 Marking codes sot143 marking code A3 marking A5 sot363 marking W1 S13 SOT363
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small-signal Field-effect Transistors and Diodes 1999 May 12 Philips Semiconductors Small-signal Field-effect Transistors and Diodes Marking codes Product types in SOT23, SOT143, SOT323, SOT343, SOT363, SOD110, SOD323 and SOD523 packages are marked

A5 DIODE

Abstract: A6 DIODE DIODE A6 A4 diode k6 diode k1 diode A3 DIODE S12 MARKING DIODE K4 diode KSD-D5H003-000
Contextual Info: ND102M6L Semiconductor Antenna Switching Diode Array 6 in 1 Features • 6 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Triple-Band Switching Diode ]

tvs diode marking code fo

Abstract: semtech tvs SOT23-6L Marking Code s12 S12 MARKING CODE DIODE
Contextual Info: _ SMS05 l* ? < 5 F M tjWji T F P H A ugust 28, 1998 TVS Diode Array For ESD and Latch-Up Protection thru SMS24 T E L 8 0 5 -4 9 8 -2 1 11 F A X :805-498-3804 W E B :http://w w w .sem tech.com DESCRIPTION FEATURES The SM S series of TVS arrays are designed to protect

S12 MARKING CODE DIODE

Abstract: ND102 s12 diode
Contextual Info: ND102 Semiconductor Antenna Switching Diode Features • Low capacitance : Max.0.4pF • Low series resistance : rs= 1.0Ω Typ. @IF=10mA • UHF/VHF Band RF Switch Applications Ordering Information Type No. Marking Package Code ND102 S SOD-923 Outline Dimensions

ND102M6L

Abstract: S12 MARKING DIODE triple-band antenna switch
Contextual Info: ND102M6L Antenna Switching Diode Array 6 in 1 Features • 6 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Triple-Band Switching Diode ]

Contextual Info: ND102M4L Semiconductor Antenna Switching Diode Array 4 in 1 Features • 4 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • ASM/FEM Module RF Switch Applications [ Dual-Band Switching Diode ]

S12 MARKING CODE DIODE

Contextual Info: ND102M4AL Antenna Switching Diode Array 4 in 1 Features • 4 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Dual-Band Switching Diode ]

ND102M4L

Contextual Info: ND102M4L Semiconductor Antenna Switching Diode Array 4 in 1 Features • 4 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • ASM/FEM Module RF Switch Applications [ Dual-Band Switching Diode ]

Contextual Info: ND102M6L Antenna Switching Diode Array 6 in 1 Features • 6 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Triple-Band Switching Diode ]

5v tvs

Abstract: SOT23-6L Marking Code S12 MARKING CODE DIODE
Contextual Info: m SMS05 I Today’s Results.Tomorrow^ Vision O ctober 28, 1998 TVS Diode Array For ESD and Latch-Up Protection thru SMS24 T E L 8 0 5 -4 9 8 -2 1 11 F A X :805-498-3804 W E B :http://w w w .sem tech.com DESCRIPTION FEATURES The SM S series of T V S arrays are designed to protect

4 channel 1 package type antenna switching diode array

Abstract: S12 MARKING CODE DIODE ND102M4AL
Contextual Info: ND102M4AL Semiconductor Antenna Switching Diode Array 4 in 1 Features • 4 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Dual-Band Switching Diode ]

Contextual Info: ND102M4AL Antenna Switching Diode Array 4 in 1 Features • 4 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Dual-Band Switching Diode ]

S12 MARKING DIODE

Abstract: S12 MARKING CODE DIODE SOD882 BAP55L
Contextual Info: BAP55L Silicon PIN diode Rev. 01 — 5 April 2005 Preliminary data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882 leadless ultra small plastic SMD package. 1.2 Features • High speed switching for RF signals ■ Low diode capacitance

S12 MARKING DIODE

Abstract: S12 MARKING CODE DIODE diode marking s12 s12 diode BBY39
Contextual Info: Short-form product specification Philips Semiconductors Double variable capacitance diode BBY39 QUICK REFERENCE DATA APPLICATIONS • Electronic tuners in satellite TV systems. SYMBOL DESCRIPTION Vr continuous reverse voltage Tj operating junction temperature

S12 MARKING DIODE

Abstract: S12 MARKING CODE DIODE SDT12SF 15KV ksd2076
Contextual Info: SDT12SF Semiconductor TVS Diode Features • Transient protection for data lines to IEC61000-4-2 ESD 15KV(air), 8KV(contact ) • Small package for use in portable electronics • Low operating and clamping voltage Applications • Cellular Handsets and Accessories

marking S12

Abstract: S12 MARKING DIODE K 2078 S12 MARKING CODE DIODE 15KV SDT12S ksd2078
Contextual Info: SDT12S Semiconductor TVS Diode Features • Transient protection for data lines to IEC61000-4-2 ESD 15KV(air), 8KV(contact ) • Small package for use in portable electronics • Low operating and clamping voltage Applications • Cellular Handsets and Accessories

Contextual Info: Philips Semiconductors Product specification Controlled avalanche rectifiers BASH; BAS12 FEATURES DESCRIPTION • Glass passivated Rectifier diodes in cavity free cylindrical SOD91 glass packages, incorporating lmplotec 1 technology. • High maximum operating

BAS11

Abstract: S12 MARKING CODE DIODE S12 MARKING DIODE BAS12
Contextual Info: Philips Semiconductors Product specification Controlled avalanche rectifiers BAS11; BAS12 FEATURES DESCRIPTION • Glass passivated Rectifier diodes in cavity free cylindrical SOD91 glass packages, incorporating lmplotec 1> technology. • High maximum operating

sot143 marking code 2c

Abstract: TVS RS422 marking 5a TVS SOT143 SOT143 Marking 5a sot143 marking code 5A IEC61000-4-4 PJSR12 marking 5a sot143
Contextual Info: PJSR12 Low Capacitance TVS and Diode Array This diode array is configured to protect up to two data transmission lines acting as a line terminator, minimizing overshoot and undershoot conditions due to bus impedance as well as protect against over-voltage events as

C10-A10FX

Abstract: C12-A21BX 220v ac voltage stabilizer circuit C12-A21FX C10-A10BX solid state 220v ac stabilizer 220V AC Automatic Voltage stabilizer transistor A1232 releco relay 24v dc 10a C12-A21X
Contextual Info: IRC Interface and general application The new IRC relays Button and lockable lever push-to-test, lift-to-lock Mechanical and LED indication as standard Coil voltage marked on the top of the relay Marking label Optional in-built suppressors circuits and bridge rectifier for AC/DC relays

C5V6 ph

Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
Contextual Info: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER

BFT65

Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Contextual Info: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions

Contextual Info: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance

BBY39

Abstract: S12 MARKING DIODE S12 MARKING CODE DIODE
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BBY39 UHF variable capacitance double diode Product specification Supersedes data of November 1993 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification