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ECS International Inc ECS-110.5-20-1X Crystal 11.0592MHz 20PF T/H - HC-49UX - ±50ppm - ±30ppm - 20pF - 30 Ohm - Fundamental - -10°C ~ 70°C - HC49/U - 0.447 L x 0.183 W (11.35mm x 4.65mm) - 0.530 (13.46mm)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	ECS-110.5-20-1X		1,300			1 - 10 - 100 $0.40 1000 $0.35 10000 $0.28	Buy Now
Avnet Americas	ECS-110.5-20-1X	Bulk	200	21 Weeks	100	1 - 10 - 100 $0.31 1000 $0.31 10000 $0.28	Buy Now
Avnet Abacus	ECS-110.5-20-1X			20 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samtec Inc HTMS-110-52-G-S-SM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	HTMS-110-52-G-S-SM					1 - 10 - 100 $1.89 1000 $1.37 10000 $0.97	Buy Now
Samtec Inc HTMS-110-52-T-D-SM .050 X .100 High-Temp Through-hole Micro Terminal Strip
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	HTMS-110-52-T-D-SM					1 - 10 - 100 $1.69 1000 $1.23 10000 $0.87	Buy Now
Sager	HTMS-110-52-T-D-SM					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Samtec Inc HTMS-110-52-F-S-SM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	HTMS-110-52-F-S-SM					1 - 10 - 100 $1.48 1000 $1.04 10000 $0.76	Buy Now
Samtec Inc HMTMS-110-52-G-D-100 Conn Unshrouded Header HDR 20 POS 1.27mm Solder ST Thru-Hole
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	HMTMS-110-52-G-D-100					1 - 10 $3.44 100 $2.89 1000 $1.90 10000 $1.33	Buy Now
Sager	HMTMS-110-52-G-D-100					1 - 10 - 100 - 1000 - 10000 -	Buy Now

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S11052 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
pd 223 Abstract: SiHP18N50C SiHP18N50C-E3 Contextual Info: SiHP18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V • 100 % Avalanche Tested 0.225 76 • High Peak Current Capability Qgs (nC) 21 • dV/dt Ruggedness Qgd (nC)	Original	sihp18n50c 2002/95/ec o-220ab sihp18n50c-e3 +211-mar-11 pd 223	PDF
Contextual Info: IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Available • Logic-Level Gate Drive 0.050 • RDS(on) Specified at VGS = 4 V and 5 V	Original	irlz34 sihlz34 2002/95/ec o-220ab +111-mar-11	PDF
Contextual Info: IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Available • Logic-Level Gate Drive 0.10 • RDS(on) Specified at VGS = 4 V and 5 V	Original	irlz24 sihlz24 2002/95/ec o-220ab +22011/65/eu js709a	PDF
IRLZ24 Contextual Info: IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Available • Logic-Level Gate Drive 0.10 • RDS(on) Specified at VGS = 4 V and 5 V	Original	irlz24 sihlz24 2002/95/ec o-220ab +22011/65/eu js709a	PDF
Contextual Info: IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Available • Logic-Level Gate Drive 0.050 • RDS(on) Specified at VGS = 4 V and 5 V	Original	irlz34 sihlz34 2002/95/ec o-220ab +22011/65/eu js709a	PDF
S11074 Abstract: S11031 S11007 S11048 S11030 M83446 S11100 m83446/11 S11092 S11065 Contextual Info: S11000 Series Fixed Chip Inductors for Space Applications FEATURES Military QPL Approved. Pick-and-place compatible. SPECIFICATIONS Met the requirements of MIL-PRF83446 and MIL-STD-981, class S or class B. Class S parts are intended for critical flight and mission-essential ground	Original	s11000 mil-prf83446 mil-std-981 mil-std-202 +10s11074 s11031 s11007 s11048 s11030 m83446 s11100 m83446/11 s11092 s11065	PDF
IRFZ40PBF Contextual Info: IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.028 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling Qgd (nC) 25 • Simple Drive Requirements	Original	irfz40 sihfz40 2002/95/ec o-220ab +32011/65/eu 12-mar-12 irfz40pbf	PDF
Contextual Info: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature	Original	irlz44 sihlz44 2002/95/ec o-220ab +22011/65/eu 12-mar-12	PDF
IRLZ24 Abstract: SiHLZ24 SiHLZ24-E3 Contextual Info: IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Available • Logic-Level Gate Drive 0.10 • RDS(on) Specified at VGS = 4 V and 5 V	Original	irlz24 sihlz24 2002/95/ec o-220ab +211-mar-11 sihlz24-e3	PDF
S11052 Abstract: dil 24 MIL-HDBK-217-FN2 Contextual Info: IMX 4 Series 4 Watt DC-DC Converters Input voltage ranges up to 121 V DC 1 or 2 outputs up to 48 V DC Up to 2000 V DC I/O electric strength test • Short circuit protection • DIL 24 Case with 8.5 mm profile Selection chart Output 1 Uo nom Io nom Output 2	Original	170ries s11052 dil 24 mil-hdbk-217-fn2	PDF
IMX 140 Contextual Info: IMX 4 Series 4 Watt DC-DC Converters Input voltage ranges up to 121 V DC 1 or 2 outputs up to 48 V DC Up to 2000 V DC I/O electric strength test • Short circuit protection • DIL 24 Case with 8.5 mm profile Selection chart Output 1 Uo nom Io nom [V DC]	Original	s11052 imx 140	PDF
irlz44 Contextual Info: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature	Original	irlz44 sihlz44 2002/95/ec o-220ab +3o-220emarks 2011/65/eu 12-mar-12	PDF
Contextual Info: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature	Original	irlz44 sihlz44 2002/95/ec o-220ab +3o-220aelectronic 2011/65/eu js709a	PDF
Contextual Info: IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.028 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling Qgd (nC) 25 • Simple Drive Requirements	Original	irfz40 sihfz40 2002/95/ec o-220ab +32011/65/eu js709a 02-oct-12	PDF

date code format analog devices Abstract: S11052 ANALOG DEVICES DATE CODE anomaly ADIS16209 Example source code for implementing Contextual Info: Silicon Anomaly High Accuracy, Dual-Axis Digital Inclinometer and Accelerometer ADIS16209 This anomaly list describes the known bugs, anomalies, and workarounds for the ADIS16209. Analog Devices, Inc., is committed, through future silicon revisions, to continuously improve silicon functionality. Analog Devices tries	Original	adis16209 er001 s11052-0-9/12 date code format analog devices +4s11052 analog devices date code anomaly example source code for implementing	PDF
IRLZ24 Contextual Info: IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Available • Logic-Level Gate Drive 0.10 • RDS(on) Specified at VGS = 4 V and 5 V	Original	irlz24 sihlz24 2002/95/ec o-220ab +22011/65/eu 12-mar-12	PDF
Contextual Info: SiHP18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V • 100 % Avalanche Tested 0.225 76 • High Peak Current Capability Qgs (nC) 21 • dV/dt Ruggedness Qgd (nC)	Original	sihp18n50c 2002/95/ec o-220ab sihp18n50c-e3 +22011/65/eu js709a	PDF
Contextual Info: SiHP18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V • 100 % Avalanche Tested 0.225 76 • High Peak Current Capability Qgs (nC) 21 • dV/dt Ruggedness Qgd (nC)	Original	sihp18n50c 2002/95/ec o-220ab sihp18n50c-e3 +12011/65/eu	PDF
Contextual Info: SiHP18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V • 100 % Avalanche Tested 0.225 76 • High Peak Current Capability Qgs (nC) 21 • dV/dt Ruggedness Qgd (nC)	Original	sihp18n50c 2002/95/ec o-220ab sihp18n50c-e3 +12011/65/eu	PDF
Contextual Info: IRLZ24, SiHLZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Available • Logic-Level Gate Drive 0.10 • RDS(on) Specified at VGS = 4 V and 5 V	Original	irlz24 sihlz24 2002/95/ec o-220ab +111-mar-11	PDF
Contextual Info: IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Available • Logic-Level Gate Drive 0.050 • RDS(on) Specified at VGS = 4 V and 5 V	Original	irlz34 sihlz34 2002/95/ec o-220ab +22011/65/eu js709a	PDF
Contextual Info: SiHP18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V • 100 % Avalanche Tested 0.225 76 • High Peak Current Capability Qgs (nC) 21 • dV/dt Ruggedness Qgd (nC)	Original	sihp18n50c 2002/95/ec o-220ab sihp18n50c-e3 +22011/65/eu js709a	PDF
Contextual Info: IRFZ24, SiHFZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.10 Qg (Max.) (nC) 25 • Fast Switching Qgs (nC) 5.8 • Ease of Paralleling Qgd (nC) 11	Original	irfz24 sihfz24 2002/95/ec o-220ab +32011/65/eu js709a 02-oct-12	PDF
Contextual Info: IRFZ24, SiHFZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.10 Qg (Max.) (nC) 25 • Fast Switching Qgs (nC) 5.8 • Ease of Paralleling Qgd (nC) 11	Original	irfz24 sihfz24 2002/95/ec o-220ab +22011/65/eu 12-mar-12	PDF

S11052 Search Results

S11052 Price and Stock

ECS International Inc ECS-110.5-20-1X

Samtec Inc HTMS-110-52-G-S-SM

Samtec Inc HTMS-110-52-T-D-SM

Samtec Inc HTMS-110-52-F-S-SM

Samtec Inc HMTMS-110-52-G-D-100

S11052 Datasheets Context Search

pd 223

IRLZ24

S11074

IRFZ40PBF

IRLZ24

S11052

IMX 140

irlz44

date code format analog devices

IRLZ24