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    SIHLZ44 Search Results

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    Vishay Intertechnologies SIHLZ44S-GE3

    Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 200A; 150W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHLZ44S-GE3 1
    • 1 $1.94
    • 10 $1.75
    • 100 $1.38
    • 1000 $1.29
    • 10000 $1.29
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    Avnet Americas SIHLZ44S-GE3 Tape & Reel 66 Weeks 1,000
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    • 1000 $0.90
    • 10000 $0.89
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    Mouser Electronics SIHLZ44S-GE3
    • 1 -
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    • 1000 $0.92
    • 10000 $0.86
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    Vishay Intertechnologies SIHLZ44STRR-GE3

    LOGIC MOSFET N-CHANNEL 60V - Tape and Reel (Alt: SIHLZ44STRR-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHLZ44STRR-GE3 Tape & Reel 66 Weeks 800
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    • 1000 $0.90
    • 10000 $0.83
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    Mouser Electronics SIHLZ44STRR-GE3
    • 1 $2.90
    • 10 $1.86
    • 100 $1.27
    • 1000 $0.92
    • 10000 $0.86
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    Bristol Electronics SIHLZ44STRR-GE3 722
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    Vishay Siliconix SIHLZ44STRR-GE3

    SIHLZ44STRR-GE3 N-CHANNEL MOSFET TRANSISTOR, 50 A, 60 V, 2+TAB-PIN TO-263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SIHLZ44STRR-GE3 Bulk 100
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    • 100 $6.15
    • 1000 $4.51
    • 10000 $4.51
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    SIHLZ44 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IRLZ44S_RC, SiHLZ44S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    irlz44ssihlz44san6094514m+41503m9659m8331m5720m PDF

    Contextual Info: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 V RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature


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    irlz44sihlz44o-22012-mar-07 PDF

    Contextual Info: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature


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    irlz44sihlz442002/95/eco-220ab+22011/65/eu12-mar-12 PDF

    IRLZ44

    Abstract: SiHLZ44 SiHLZ44-E3 81274
    Contextual Info: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 V RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature


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    irlz44sihlz44o-22018-jul-08+2sihlz44-e381274 PDF

    D2Pak Package vishay material

    Abstract: IRLZ44S SiHLZ44S SiHLZ44S-E3
    Contextual Info: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 5.0 V 0.028 Qg (Max.) (nC) 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single D • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


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    irlz44ssihlz44so-26318-jul-08+2d2pak package vishay materialsihlz44s-e3 PDF

    irlz44

    Contextual Info: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature


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    irlz44sihlz442002/95/eco-220ab+3o-220emarks2011/65/eu12-mar-12 PDF

    Contextual Info: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature


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    irlz44sihlz442002/95/eco-220ab+3o-220aelectronic2011/65/eujs709a PDF

    Contextual Info: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.028 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D • Halogen-free According to IEC 61249-2-21


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    irlz44ssihlz44so-2632002/95/ec+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.028 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D • Halogen-free According to IEC 61249-2-21


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    irlz44ssihlz44s2002/95/eco-263+111-mar-11 PDF

    IRLZ44

    Contextual Info: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature


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    irlz44sihlz442002/95/eco-220+118-jul-08 PDF

    Contextual Info: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.028 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single D D2PAK (TO-263) G G D S S N-Channel MOSFET • Halogen-free According to IEC 61249-2-21


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    irlz44ssihlz44s2002/95/eco-263+118-jul-08 PDF

    48 H diode

    Contextual Info: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.028 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D • Halogen-free According to IEC 61249-2-21


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    irlz44ssihlz44s2002/95/eco-263+32011/65/eu12-mar-1248 h diode PDF

    48 H diode

    Contextual Info: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.028 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D • Halogen-free According to IEC 61249-2-21


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    irlz44ssihlz44s2002/95/eco-263+211-mar-1148 h diode PDF

    272048

    Contextual Info: IRLZ44_RC, SiHLZ44_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    irlz44sihlz44an609configuratit-10+59901m4362m5162m4580m272048 PDF

    IRLZ44

    Contextual Info: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature


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    irlz44sihlz442002/95/eco-220ab+22011/65/eu12-mar-12 PDF

    SMD DIODE marking AB

    Contextual Info: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 5.0 V 0.028 Qg (Max.) (nC) 66 Qgs (nC) 12 Qgd (nC) 43 Configuration • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Logic-Level Gate Drive


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    irlz44ssihlz44ssmd-22012-mar-07+1smd diode marking ab PDF

    Contextual Info: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature


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    irlz44sihlz442002/95/eco-220ab+111-mar-11 PDF

    smd diode 12c

    Contextual Info: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 5.0 V 0.028 Qg (Max.) (nC) 66 Qgs (nC) 12 Qgd (nC) 43 Configuration • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Logic-Level Gate Drive


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    irlz44ssihlz44ssmd-22018-jul-08+1smd diode 12c PDF

    Contextual Info: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature


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    irlz44sihlz442002/95/eco-220ab+3o-220aelectronic2011/65/eujs709a PDF

    Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)


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    irlz14sirlz14lsihlz14ssihlz14l+22002/95/eco-262 PDF

    SiHLZ14S

    Abstract: IRLZ14 IRLZ14L IRLZ14S SiHLZ14L SiHLZ14S-E3
    Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single G G S COMPLIANT Third generation Power MOSFETs from Vishay utilize


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    irlz14sirlz14lsihlz14ssihlz14l+318-jul-08irlz14sihlz14s-e3 PDF

    Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)


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    irlz14sirlz14lsihlz14ssihlz14l+22002/95/eco-262 PDF

    Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)


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    irlz14sirlz14lsihlz14ssihlz14l+22002/95/ec18-jul-08 PDF

    Contextual Info: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)


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    irlz14sirlz14lsihlz14ssihlz14l+22002/95/ec11-mar-11 PDF