S 239 L Search Results

AF 239 S

Abstract: AF 239 af239 Germanium power S 239 L siemens
Contextual Info: 2SC D • û23SbQS DOOMQTS 4 [SIE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF for output, mixer, and oscillator stages up to 90 0 M H z T - 3 / - 0 7 AF 239 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads

SW-419

Contextual Info: jytiK Application Note S-Parameter Data for SW-239 SPDT , SW-419 (SP4T) AT-210 and AT-230 (Digital Attenuators) M522 SW-239 S-Parameter Data S21/M log MAG 1 dB/ REF OdB CH2 Scale: 1 dB/d V S21/M log MAG 2: -0.5586 dB 10 d B /REF OdB 3:-14.215 dB 200C 000 000 MHz

bc238

Abstract: S 239 P bc237
Contextual Info: BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • L O W NOISE: BC239 A B S O LU T E MAXIMUM RATINGS TA-2 5 t: C h aracte ristic Rating Sym b o l Collector-Emitter Voltage :BC237 BC238/239 Collector-Emitter Voltage :BC237

Contextual Info: UHF series T : PTFE B : Bakelite St : Styramic MIL CODE No. TYPE REF S S > |o CABLE S H m O GROUP J o 8 ° < 3 m z 3 STRAIGHT PLUGS Screw 3 O x 0.60 RECEPTACLES R 155 404 SO 239 B S q u a re flan ge so ld e r p o t B 22,5 R 155 405 SO 239 T S q u a re f lan9e

1N2970B

Abstract: 1N2971B 1N2972B 1N2973B 1N2974B 1N2975B
Contextual Info: 6 DO-4 - CONTINUED SUSSEX SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 TEL: 239 768-6800 FAX: (239) 768-6868 T A B L E 1 A - S T A N D A R D D E V IC E E L E C T R IC A L S P E C IF IC A T IO N S JEDEC PAR T NUM BER SUSSEX PA RT

an239

Contextual Info: AN239 AN 239 x H i t t « I F * * , s P I F * * , F M & M H S g - TV Video IF Combination and Sound IF Combination I ^ /D e scrip tio n AN 239 f ± , «Mil I F i f , [B]M«t?JS0i«A F T f f l i f - i . IJ T t f i | i i 0 S # ^ 5 * I F i f 1 101» F M ;f£ *0 i#

VL99

Abstract: AN239 R28-27 V244 AN-239
Contextual Info: AN239 ic A N 239 TV V ideo IF Combination and Sound I F Combination I #5 S /D e sc rip tio n AN 239 t±, X n m f f e f r k m i & Z t L X ' . ' i - t ' , m % iF ig i , lE o m M if r m m m z m iia e & A F T fflif-v 1 T±g ipI0!«I F J fiH E Ii# "a j B H i j S W i l s M

Contextual Info: 2 4 3 5 7 6 — l X 239 S i g n a l K o n t a k t e 239 signal contacts Kontaktanordnung contact arrangement 98 96 9S29° 86 82 nn 78 7 4 ^ 7 0 , n 66, 62, A 84 80 76 72 68 64 60 58 56 54 52 50 4 8 46 96x 2,5 02,75 i_n O sJ ♦0.05 2 □ = Kon ta k tp o sitio n nicht belegt

LM139A

Abstract: LM239A LM339A M139 lm339a schematic "Op Amp" lm339 lm2901 application note LM339 APPLICATIONS zero crossing lm339 pin diagram LM2901
Contextual Info: w # S G S -T H O M S O N LM 239/A . LOW POWER QUAD VOLTAGE COMPARATORS • WIDE SINGLE SUPPLY VOLTAGE RANGE OR DUAL SUPPLIES FOR ALL DEVICES : +2V TO +36VOR ±1V TO ±18V ■ VERY LOW SUPPLY CURRENT 1.1mA INDEPENDENT OF SUPPLY VOLTAGE (1.4mW/comparator at +5V)

Contextual Info: ADE-208-239 Z 1SS199 Silicon Schottky Barrier Diode for Various Detector,High Speed Switching HITACHI Rev. 0 Dec. 1994 Outline Features • Detection efficiency is very good. • Small temperature coefficient. • S m a ll g la s s p a c k a g e (M H D ) e n a b le s e asy

GR-253

Abstract: TRCV012G5 TRCV012G7 TTRN012G5 TTRN012G7 ast0
Contextual Info: Advance Data Sheet February 2000 TRCV012G5 2.5 Gbits/s and TRCV012G7 2.7 Gbits/s Limiting Amplifier, Clock Recovery, 1:16 Data Demultiplexer Features • TRCV012G5 supports OC-48/STM-16 data rate ■ TRCV012G7 supports: — OC-48/STM-16 data rate — RS 255, 239 forward error correction (FEC)

SP8906

Abstract: NJ8811 DG14
Contextual Info: A PLESSEY W S o lid S ta te — — SP8906 500MHz 4-MODULUS DIVIDER The SP8906 is a 4-modulus -256/255'240/239) divider for use in frequency synthesisers operating to 500MHz. Designed to interface directly to the NJ8811 synthesiser control circuit, the SP8906 simplifies synthesiser designs at

FOP 244 tn

Contextual Info: Waveforms for 72 pin Modules SIEMENS Semiconductor Group 239 Waveforms for 72 pin Modules SIEMENS fee fop ÌRAS - IH RAS V t V tc S H tfíCD • tn s H - tC R P tCAS - IH CAS ÍRAD ÍASR Address IH tfíA L tCAH Use Row ÍASR Row Column tcWL r a h tw e s WE

bc237 siemens

Abstract: BC238 BC239 BC237 237B C307B C238C C237B marking CODE 50G TO92 C-239
Contextual Info: SIE » • SIEMENS flS35bQS G041540 134 « S I E G SIEMENS AKTIENGESELLSCHAF BC 237 . BC 239 NPN Silicon AF Transistors • High current gain • Low collector-emitter saturation voltage • Complementary types: B C 307, B C 308, BC 309 PNP Type BC BC

S239P

Abstract: quadrant detector quadrant photodiode CD S 239 P s 239 l L05 diode 1S239
Contextual Info: TELEFUNKEN Semiconductors S 239 P Silicon PIN Photo Quadrant Detector Description S239P is a monolithic silicon PIN photodiode array in a quadrant configuration. Four photodiodes on a single chip with a common cathode and separated by only 10æm are mounted

GR-253

Abstract: TRCV012G5 TRCV012G7 TTRN012G5 TTRN012G7 D12N cdm 12.6 laser
Contextual Info: Advance Data Sheet March 2000 TTRN012G5 2.5 Gbits/s and TTRN012G7 (2.5 Gbits/s and 2.7 Gbits/s) Clock Synthesizer, 16:1 Data Multiplexer Features • TTRN012G5 supports OC-48/STM-16 data rate ■ TTRN012G7 supports: — OC-48/STM-16 data rate — RS (255, 239) forward error correction (FEC)

comcode

Abstract: GR-253 TRCV012G5 TRCV012G7 TTRN012G5 TTRN012G7
Contextual Info: Preliminary Data Sheet August 2000 TTRN012G5 2.5 Gbits/s and TTRN012G7 (2.5 Gbits/s and 2.7 Gbits/s) Clock Synthesizer, 16:1 Data Multiplexer Features • TTRN012G5 supports OC-48/STM-16 data rate ■ TTRN012G7 supports: — OC-48/STM-16 data rate — RS (255, 239) forward error correction (FEC)

transistor 1548 b

Abstract: AF239 AF 239 S d 1548 Q62701-F51 af239s AF 239 Germanium power
Contextual Info: 2SC D m û23SbQS 0004075 4 IS IE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF T - 3 I - 07 for output, mixer, and oscillator stages up to 9 0 0 M H z AF 2 39 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads

Contextual Info: Package Number 239 - 24-Lead SOIC |- $ - | .0 1 Q - 2 5 ( m ) I B ( M ) l IN D EX " AREA D E T A IL 1 BASE PLA N E D S E A T IN G PLAN E 12 ” A” —A1 1 uuuuuu MMMMM .0. T - | - -

Contextual Info: AN A L O G D E V I C E S / PHI HIV ÉbE D PMÌ • OfllbflOS 0 0 C H 3 2 1 3 ■ PM-139/PM-139A/PM-239 QUAD LOW-POWER _ VOLTAGE COMPARATORS Precision M onolithics Inc. ' " P ^ s - n J FEATURES G E N E R A L DESCRIPTION • Single or Dual Supply Operation

TFK BC

Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
Contextual Info: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:

Contextual Info: UHF UHF 7 U H F-Einbau buchse m it Flan sch UHF Panel Socket B e s te ll-N r. M IL -S td . E in b a u m a B A n m erku n ge n J01041B0632 SO-239 Z08 Korper aus Messing brass body Order Nr. 8 MIL-Std. Mount, dim. Remarks UH F-Kupplung UHF Adaptor B e s te ll-N r.

Contextual Info: SPECIFICATION CONTROL DRAWING LOCKWASHER 312 HEX .125 MAX PANAL 1/4- 36 UNS-2A THREAD TRUNCATED .312 HEX O-RING _ 0.241 /.239 MOUNTING HOLE 1.375 MAX. 1. MATING INTERFACE DIMENSIONS P E R M IL -S T D -3 2 8 , F ig .3 2 1 .1 BMA, PLUG 2 . ELECTRICAL DC TO 8 .0

Contextual Info: PM-139/PM-139A/PM-239 Q UADLO W -PO W ER VOLTAGE COMPARATORS P re cis io n M o n o lith ic s Inc. FEATURES GENERAL DESCRIPTION • Single or Dual Supply Operation • Input Voltage Range Includes Ground • Low Power Consumption 2mW/Comparator • Low Input Bias Current. 25nA