S 177 166 220 Search Results

13001 6D 331

Abstract: 13001 8D 331 13001 s 8d
Contextual Info: BUCHANAN A ll T y c o E le c tr o n ic s P a r t N u m b e r s w it h o u t a c o r r e s p o n d in g B U C H A N A N P a r t N u m b e r a r e lis te d a s b a s e p a r t n u m b e r s o n ly . C o m p le te p a r t n u m b e r s w ith p r e fix e s a n d / o r s u ff ix e s a r e s h o w n o n t h e

NEC 789166

Abstract: U14186E MCC wiring diagram to82 uPD789166 789166 PD789124A ti81 UPD789167GB uPD789167
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUITS µPD789166 A1 ,167(A1),176(A1),177(A1), 166(A2),167(A2),176(A2),177(A2) 8-BIT SINGLE-CHIP MICROCONTROLLERS The µPD789166(A1), 789167(A1), 789166(A2), and 789167(A2) (hereafter, represented as µPD78916x(A1) and µPD78916x(A2) are members of the µPD789167 Subseries in the 78K/0S Series. The µPD789176(A1),

ti8148

Abstract: 789166 uPD789166 U14186E NEC 789166 uPD789166Y uPD789167 UPD789166GB-8ES 789166Y uPD789850
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUITS µ , 176 A),177(A),166Y(A),167Y(A),176Y(A),177Y(A) 8-BIT SINGLE-CHIP MICROCONTROLLERS The µPD789166, 789167, 789176, and 789177 (hereafter, represented as µPD78916x and µPD78917x) are

UPD789167YGB-XXX-8ES

Abstract: NEC 789166 U14186E
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUITS µ , 176 A),177(A),166Y(A),167Y(A),176Y(A),177Y(A) 8-BIT SINGLE-CHIP MICROCONTROLLERS The µPD789166, 789167, 789176, and 789177 (hereafter, represented as µPD78916x and µPD78917x) are

stmicroelectronics 402 transistor 650

Abstract: 700B AN1294 PD57018 PD57018S
Contextual Info: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE PowerSO-10RF

945 TRANSISTOR

Abstract: 700B AN1294 PD57018 PD57018S
Contextual Info: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE PowerSO-10RF

945 TRANSISTOR

Abstract: 700B AN1294 PD57018 PD57018S
Contextual Info: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

Contextual Info: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

Contextual Info: B60/C60 Series Heat Sink System Ohmite introduces the power C series heat sink with improved Cam N Lock spring clip Pat. Pending . This series offers flexible, high performance and compact heat sink with exchangeable cam clip system for TO-220, TO-247, and

F 2452 mosfet

Abstract: DV2820 0823L R K J 0822
Contextual Info: MOTOROLA O rder this docum ent by M RF166C/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166C N-Channel Enhancement Mode MOSFETs Designed primarily for wideband large-signal output and driver from 3 0 -5 0 0 MHz. •

Contextual Info: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100W , 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz

0985

Abstract: ma 1050
Contextual Info: ERICSSON í PTF 10035 30 Watts, 1 . 9 - 2 . 0 GHz L D M O S Field Effect Transistor Description The 10035 is an internally matched common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 1.9 to 2.0 GHz. It is rated at 30 watts minimum

S2-1111

Contextual Info: PD57018-E PD57018S-E RF POWER transistor, LdmoST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 18W with 16.5dB gain @ 945MHz /28V ■ New RF plastic package

S2-1111

Contextual Info: PD57018-E PD57018S-E RF POWER transistor, LdmoST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 18W with 16.5dB gain @ 945MHz /28V ■ New RF plastic package

smd diode code 18W

Abstract: 3.40 pf variable capacitor 700B AN1294 PD57018 PD57018-E PD57018S PD57018S-E PD57018STR-E PD57018TR-E
Contextual Info: PD57018-E PD57018S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 18W with 16.5dB gain @ 945MHz /28V ■ New RF plastic package PowerSO-10RF

SD1902

Abstract: BLF244 DV2820 MRF136 MRF166C VK200 MRF166 F 2452 mosfet
Contextual Info: Order this document by MRF166C/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166C N–Channel Enhancement Mode MOSFETs Designed primarily for wideband large–signal output and driver from 30 – 500 MHz. • MRF166C — Guaranteed Performance at 500 MHz, 28 Vdc

Contextual Info: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull

MRF177

Contextual Info: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N–CHANNEL BROADBAND RF POWER MOSFET ARCHIVE INFORMATION Designed for broadband commercial and military applications up to 400 MHz

capacitor mallory

Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 1000 watt Motorola power supply RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 100 watt transistor bd136 equivalent rohm mtbf
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF15030 Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.

C42315-A60

Abstract: MR78700 C42334-A350 C42315-A1353 V23614-A102 C26382-F302 V23756 C42121 C42334-A44 V42254-A
Contextual Info: Alphanumerical Index Type A11 A1341 A 1347 A1i>53 A3000 A60 A68 B K -L IL 368 BK-DIL 390 BK-DIN 350 BK-DIN 389 BK-LEV 413 BK- MOD 421/422 C26382-F300 C26382-F302 C42121-A25 C42121-A40 C42121-A93 C42195-A126 C 42315-A 11 C42315-A1341 C42315-A1347 C42315-A1353

RLS135

Abstract: UM-28 smd diode UM28 RB035B-40 1SS330 RB111C smd zener diode CS RB4200 BB-75 1SR154-400
Contextual Info: □¡odes Quick reference I tM* d ^P age 190 Package Application Vr V a» Molded types USM DSM PSM I EM 3 UMD SMD Glass types SSD FMD | IMDD MPD | CPD F5 LL-34 I % LL-41 Part No. High-speed Ufca High-speed Low-leakage 35 1SS355 RLS-73 50 1SS354 RLS-72 80

c18st

Abstract: 700B AN1294 PD57070 PD57070S
Contextual Info: PD57070 PD57070S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 70 W with 14.7 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE PowerSO-10RF

700B

Abstract: AN1294 PD57070 PD57070S
Contextual Info: PD57070 PD57070S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 70 W with 14.7 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

Contextual Info: PD57070 PD57070S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 70 W with 14.7 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE