RU 250F Search Results

lm3298

Abstract: LT150A IN4002 LT1004 LT1033 LT1033C LT1033M 15v linear regulator
Contextual Info: LT1033 3A. Negative Adjustable Regulator DCSCRIPTIOfl F c n ru R c s • ■ ■ ■ Guaranteed 1% Initial Voltage Tolerance Guaranteed 0.015%/V Line Regulation Guaranteed 0.02%/W Thermal Regulation 100% Burn-in in Thermal Limit nppucmions ■ ■ ■ ■

IRFR9120

Abstract: 5CEG
Contextual Info: P-CHANNEL POWER MOSFETS IRFR9120/9121 FEATURES • • • • • • • Lower R d s ON Improved inductive ru gge d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: SAMSUNG ELECTRONICS INC bME » • IRF9620/9621 /9622/9623 7 S b 4142 0D 12271 ‘H û «SMlSK P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ru gge d n e ss Fast sw itching tim es R u g ge d polysilicon gate cell structure

IRF540

Abstract: irfp140
Contextual Info: S A MS UN G E L E C T R O N I C S INC b4E ]> • 7^4142 IRF540/541/542/543 IRFP140/141 /142/143 «sriGK N-CHANNEL POWER MOSFETS FEATURES • • • • • • • 00121b3 TO-220 Lower R ds o n Improved inductive ru gge d n e ss Fast sw itching tim es

IRF510

Abstract: IRF510 MOSFET IRF512 irf510 ir 05b diode
Contextual Info: N-CHANNEL POWER MOSFETS IRF510/511/512/513 FEATURES • • • • • • • Lo w er R ds on Im proved in d u c tive ru g g ed n es s F ast sw itch in g tim e s R u g g ed p o lysilico n g a te cell s tru ctu re Lo w er in p u t c a p a c ita n c e E x te n d e d sa fe o p e ra tin g area

2N5133

Abstract: TIS92 2N4286 cm 45-12 MPS6566 transistor 2N2712 2N3707 2N3827 2N915
Contextual Info: NATL SENICOND 6 5 0 1130 NATL {D ISCRETE} SEMICOND, àfl <D I S C R E T E L ' DeT| b S G H S D 00353^ 5 28C 35 3 9 5 o ' S O “ ' w •</) c Ç0 u. eg « Z 3 5 Q . Z ■gu. g 2 - E Ï— H < X « S es = > if o3 I « § £ * >u HI — >U S M in in in -U 1

Siemens photodiode visible light

Abstract: RU 250F
Contextual Info: SIEMENS CIIPNTSt OPTO 44E SIE M E N S T> â23b3Eb OOOSOflb G H S IE X SFH250 WITH IR FILTER SFH250F PLASTIC FIBER OPTIC PHOTODIODE DETECTOR - T - 41-53 FEATURES Maximum Ratings • 2.3 mm Aperture Holds Standard 1000 Micron Plastic Fiber • No Fiber Stripping Required

TLC497

Abstract: SPNU010 TMS370C156 SPNU029 TMS370 TMS370C710 INVERTER 10kW ru 370C050
Contextual Info: TMS370 Family Application Board Technical Reference 1993 8-Bit Microcontroller Family Printed in U.S.A., June 1993 2615131-9761 revision * SPNU029 Volume # Book Type Two Lines Book Type Volume # Book Type Two Lines Book Type Title Two Lines Title year year

62*256 ram

Abstract: TMS370 P4012 SPNS014 MAX232 isolated intel schematics cdt 1026 SPNU010 SPNU029 370C050
Contextual Info: TMS370 Family Application Board Technical Reference 1993 8-Bit Microcontroller Family Printed in U.S.A., June 1993 2615131-9761 revision * SPNU029 Volume # Book Type Two Lines Book Type Volume # Book Type Two Lines Book Type Title Two Lines Title year year

Contextual Info: AD VA N C E D PO WE R T E C H N O L O G Y blE D • Qg5 7 W QDDQfl3S 747 H A V P WWaa d v a n c ed POW ER Te c h n o l o g y QD 2N7227 400 Volt JX2N7227* JV2N7227* O S POWER MOS IV 0.315Q 'QUALIFIED TO MIL-S-19500/592 31/7/92 JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS

irf640

Abstract: hexfet irf640 power MOSFET IRF640 80 watt
Contextual Info: PD-9.374G In tern ation al ü r ] R e c tifie r IRF640 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 2 0 0 V R DS on = 0 .1 8 Q lD = 1 8 A Description

S-8120D

Contextual Info: 5V, 300mA REGULATOR with RESET and ENABLE D escription The CS-8120 is a 5V precision linear reg ­ ulator w ith two m icroprocessor com pat­ ible control functions an d protection cir­ cuitry included on chip. The com posite N PN -PN P ou tp u t pass transistor

2T908A

Abstract: 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117
Contextual Info: nojiyriPOBOflHHKOBblE nPHBOPbl: TpaH3HCTOpbI CnpaBOHHHK rioa oGmea peaaKUHen H. H. TOPIOHOBA EB MOCKBA 3HEPrOATOMH3AAT 1983 BEK 32.852 n 53 y ^ K . 621.282.3 035 P e n e H 3 e H T b i : E. 14. KpbiJioB, B. B. I1aB;ioB AB T o p b i : B. Jl. ApoHOB, A. B. E bkikob, A. A. 3aiineB,

c4111

Abstract: IRFI644G 79a diode
Contextual Info: International S Rectifier PD-9.739 IRFI644G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V DSS = 250V ^DS on = 0 -2 8 H lD = 7.9A

4655M52

Contextual Info: • International gig Rectifier MA5S452 DG15SD2 TTD « I N R PD-9.756 IRFP264 INTERNATIONAL RE C T IF IE R HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements

IRFZ14

Abstract: 1A N MOSFET T0-220
Contextual Info: PD-9.507B International S Rectifier IRFZ14 HEXFET P o w e r M O S F E T • • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V dss - V R DS on = 0 . 2 0 Q lD = 1 0 A Description

L528

Abstract: 454d top marking IRC530 IRC530 equivalent
Contextual Info: PD-9.454D International S Rectifier IRC530 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 1 0 0 V

IRFL214

Abstract: AN-994
Contextual Info: PD-9.862 International B Rectifier IRFL214 HEXFEf Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 250V ^D S on - 2 . Oí

pj 66 diode

Abstract: IRFPC60
Contextual Info: PD-9.870 International S Rectifier IRFPC60 HEXFET P o w e r M O S F E T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 600V R DS on = O-4 0 ^

RU 250F

Contextual Info: Bourns Multifuse Shortform Catalog 2003 Reliable Electronic Solutions Multifuse® Products Bourns® Multifuse® family of Polymer Positive Applications Temperature Coefficient PPTC “resettable fuses” are used in a wide variety of circuit protection applications.

UFN232

Abstract: ufn230
Contextual Info: UNITRODE CORP 9347963 TE 92D UNITRODE CORP POWER MOSFET TRANSISTORS 200 Volt, 0.4 Ohm N-Channel c1 3 4 7 ci b 3 G D lG t,3 D 10630 U-jz UFN230 UFN231 UFN232 UFN233 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.

ha 1452

Abstract: 7401N FJH231A truth table NAND gate 74 FJH231 ft 5777 2 input nor gate 24v Transistor B 1566
Contextual Info: FJH23I FJH23IA T.T.L. QUADRUPLE 2-INPUT POSITIVE N A N D GATES Corresponds to 74 Series type 7401N TEN TA TIV E DATA T hese dev ices a re tr a n s is to r - tr a n s is to r logic quadruple 2-input positive NAND g a te s , with a sin g le-en d ed open c o lle cto r output t r a n s is to r , in the F J s e r ie s of in te g rate d

TTL 74-series IC

Abstract: IC 7493n FJJ14 TTL 7490 7401 ic configuration ic 7490n 7400N 7401N 7402N 7403AN
Contextual Info: INTEGRATED CIRCUITS LIST OF COMPARABLE TYPES T T L RANGE COMMERCIAL VERSIONS Type No. 7400N 7401N 7401 AN 7402N 7403N 7403AN 7404N 7405N 7405AN 741 ON 7420N 7430N 7440N 7441 AN 7442N 7450N 7451N 7453N Mullard types Type No. Mullard types FJH131 FJH231 FJH311

Fluke a55

Contextual Info: i T u TECHNOLOGY nm wideband RMS-DC Converter Building Block F€ A T U R € S D C S C R IP TIO fl • 300MHz 3dB Bandwidth The LT1088 is a thermally based R M S -D C converter build­ ■ 1 % Accuracy D C -5 0 M H Z ing block. It converts the input waveform to heat. Using ex­