RT 600 BT Search Results

SSG70D60

Abstract: SSG70C60 SSG70C100 SSG70c50 SSG70C30 SSG70C SSG70C80 SSG70C120 SSG70C20 SSG70C40
Contextual Info: -119n a m I j f l l H SSG 70C « SA T-9 70A c z. 9 V ' - vm - f- rt) ie V tm sd ^ SSG 70C 20 SSG 70C 30 SSG 70C 40 SSG 70C 50 SSG 70C 60 SSG 70C 80 SSG 70C 100 SSG 70C 120 200 300 400 500 600 800 1000 1200 ¥ ÍÍL I n rm s ) ¡GM Tj = I t m = 100A 1 .5

HEL-700

Abstract: 60X10
Contextual Info: Temperature Sensors HEL-700 Series FUNCTIONAL BEHAVIOR RT = R0 1+AT+BT2-100CT3+CT4 RT = Resistance (W) at temperature T (°C) R0 = Resistance (W) at 0°C T = Temperature in °C B = -a d CT<0 =-a b A=a+ad 100 1002 1004 CONSTANTS -1 Alpha, α (°C ) Delta, δ (°C)

HEL-700

Abstract: "temperature Sensors" rtd with wheatstone bridge- temperature EL-700
Contextual Info: Temperature Sensors HEL-700 Series FUNCTIONAL BEHAVIOR RT = R0 1+AT+BT2-100CT3+CT4 RT = Resistance (W) at temperature T (°C) R0 = Resistance (W) at 0°C T = Temperature in °C B = -a d CT<0 =-a b A=a+ad 100 1002 1004 CONSTANTS -1 Alpha, α (°C ) Delta, δ (°C)

Contextual Info: i N AF1ER P H I L I P S / D I S C R E T E U C V C LU riV IC IN I 2 5E D bt.53T31 0 Q 2 2 4 5 3 U r t I rt 4 m BYR34 SERIES This data sheet contains advance information and specifications are subject to change w ithout notice. 7 ^ 6 3 -/ 9 J K. ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES

Contextual Info: N AflER PHILIPS/DISCRETE b lE bbSBTBl D0271fl4 041 H A P X II BT136F SERIES P FULL-PACK TRIACS Glass-passivated 4 ampere triacs in SOT-186 envelopes, which feature an electrically isolated mounting base. They are intended fo r use in applications requiring high bidirectional transient and blocking

CAD-50

Abstract: CAD50 CA-D50-24F-44 CA-D20R CA-D10R-24B-10 24c44 CA-D20-24C-44 CA-D10-24B-44 CA-D10-24C-44 CA-D14-24C-44
Contextual Info: bTE D C I R C UI T A S S E M B L Y CORP • 5 1 3 3 75 8 O O O I R O B 214 H C A C fiyi-c^vr .24 ±.008 [ 6 . ! ±0.20] .10 0 STRIP HEADER [ 2.54 J Features For additional sizes and configurations not listed, refer to pages 42 thru 45 of this catalog Available in straight and right

Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • btS3T31 0022317 7 ■ Glass-passivated double-diffused rectifier diodes in TO-220 plastic envelopes, intended for power rectifier applications. The series consists of the following types: Normal polarity cathode to base plate : BY249—300 and BY249—600.

BT138F

Abstract: TRIAC BT138F TLC 555
Contextual Info: PHILIPS INTERNATIONAL b SE ]> • 711GÛ2L. D G L 2 2 R S bS'i « P H I N BT138F SERIES J FULL-PACK TRIACS Glass-passivated 12 ampere triacs in SOT-186 envelopes, which feature an electrically isolated mounting base. They are intended for use in applications requiring high bidirectional transient and blocking

Contextual Info: i i N AMER PHILIPS/DISCRETE b'lE D • bbS3^31 Q05723D 851 H A P X BT138F SERIES J V FULL-PACK TRIACS Glass-passivated 12 ampere triacs in SOT-186 envelopes, which feature an electrically isolated mounting base. They are intended fo r use in applications requiring high bidirectional transient and blocking

m861

Abstract: BT145 BT145-500R MS SERIES 600R 800R
Contextual Info: BT145 SERIES _ THYRISTORS Glass-passivated 25 ampere thyristors intended fo r use in applications involving high fatigue stress due to thermal cycling arid repeated switching. These thyristors feature a high surge current capability. Typical applications include m otor and heating control, regulators fo r transfomerless

IGBT module FZ 1200

Abstract: IGBT FZ 200 IGBT module FZ 400 FZ 800 R12 KF1 IGBT FZ 800 IGBT FZ 1200 kf1 IGBT FZ 1200 IGBT FZ 600 IGBT FZ 1000 RT200
Contextual Info: IG BT-Mod ule IGBT modules Modules IGBT Typ Type V CES lc V A R ,h jc DC pro Zweig per arm par bras tv, max IS ° C /W °c 0: 0,088 0.089 ICRM v CEsat Ion ts tf i ms tv| = 25 °C, typ. lv| = 25 “C, typ. t»,= 2 5 °C, typ tv, 25 °C, typ A V us US Maßbild

T34 rectifier

Contextual Info: DDEbT13 151 APX N A PIER PHILIPS/DISCRETE bTE 1N5059 to 5062 ]> CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes, capable o f absorbing reverse transients. They are intended fo r rectifier applications as well as general purpose applications in television and

BT137

Contextual Info: N AHER PHILIPS/DISCRETE b 'lE ]> • bb53=]31 □0571c]b flb3 ■ APX BT137 SERIES J \ _ TRIACS Glass-passivated 8 ampere triacs intended fo r use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance w ith very low thermal

30N60

Abstract: 30N60 220 bt 109 transistor w30n60 Transistor motorola 418 gw 348
Contextual Info: MOTOROLA Order this document by MGW30N60/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G W 30N 60 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced

Contextual Info: N AUER PHILIPS/DISCRETE bbS3T31 0027207 47T M A P X b^E D BT137F SERIES J V FULL-PACK TRIACS Glass-passivated 8 ampere triacs in SOT-186 envelopes, which feature an electrically isolated mounting base. They are intended fo r use in applications requiring high bidirectional transient and blocking

Contextual Info: N AUER PHILIPS/DISCRETE bb53^31 QD27242 573 • IAPX BT139 SERIES b*1E D L TRIACS Glass-passivated 16 ampere triacs intended fo r use in applications requiring high bidirectional transient and blocking voltage capability, and high thermal cycling performance w ith very low thermal resistances,

FS15R06KF2

Abstract: FZ 300 R 06 KL triphase
Contextual Info: IG BT-Mod ule IGBT modules Modules IGBT Typ b VcES IcRM v CEsat ton tf 1« Type V A 'p = 1 ms tv,= tv,= tvj = tv, 25 °C, typ 25 °C, typ 25 °C, typ. 25 °C, typ. A V IS US MS RthJC DC pro Zweig per arm par bras tvj max °C/W °c M aßbild O utline Dimension

HEL-775-A

Abstract: HEL-775-B temperature sensors 10k
Contextual Info: Temperature Sensors HEL-775 Series FUNCTIONAL BEHAVIOR RT = R0 1+AT+BT2-100CT3+CT4 RT = Resistance (W) at temperature T (°C) R0 = Resistance (W) at 0°C T = Temperature in °C B = -a d CT<0 =-a b A=a+ad 100 1002 1004 ACCURACY VS TEMPERATURE EL-700 platinum RTDs are available in two base

rtd with wheatstone bridge- temperature

Abstract: rtd with wheatstone bridge "Temperature Sensors" HRTS-5760-B
Contextual Info: Temperature Sensors HRTS Series FUNCTIONAL BEHAVIOR RT = R0 1+AT+BT2-100CT3+CT4 RT = Resistance (W) at temperature T (°C) R0 = Resistance (W) at 0°C T = Temperature in °C B = -a d CT<0 =-a b A=a+ad 100 1002 1004 PLATINUM RTDs ACCURACY VS TEMPERATURE HRTS platinum RTDs are available in two base resistance trim tolerances: ±0.2% or ±0.1%. The corresponding resistance interchangeability and temperature

MJ 6810

Contextual Info: MOTOROLA Order this document by MGY40N60/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGY40N60 Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced

al 60 dv 2425

Contextual Info: hSE B PHILIPS INTERNATIONAL • 711GÖSb DGbSSMT 7 7 CJ H P H I N BT136F SERIES FULL-PACK TRIACS Glass-passivated 4 ampere triacs in SOT-186 envelopes, which feature an electrically isolated m ounting base. They are intended fo r use in applications requiring high bidirectional transient and blocking

TRIAC BT 136

Abstract: BT 136 TRIAC BT136 working triac bt136 temperature control by triac BT136 triac bt 135 bt136 triac TRIAC TAG 90 BT136 motor BT136 application note
Contextual Info: PHILIPS INTERNATIONAL bSE ]> • 711Da2b 00bS23ö ^ 3 «PHIN BT136 SERIES y V. TRIACS Glass-passivated 4 ampere triacs intended fo r use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance w ith very low thermal

Contextual Info: IG BT-Mod ule IGBT modules Modules IGBT Typ Type b VcES V A IcRM v CEsat ton 1« tf 'p = 1 ms tv,= 25 °C, typ tv,= 25 °C, typ tvj = 25 °C, typ. tv, 25 °C, typ. A V MS MS MS RthJC DC p ro Zweig per arm par bras Ivj max ° C /W °c Maßbild Outline D im ension

fz 300 r 12 kf2

Abstract: F 300 R 1200 KF
Contextual Info: IG BT-Mod ule IGBT modules Modules IGBT Typ Type b VcES V A IcRM v CEsat ton 1« tf 'p = 1 ms tv,= 25 °C, typ tv,= 25 °C, typ tvj = 25 °C, typ. tv, 25 °C, typ. A V MS MS MS RthJC DC p ro Zweig per arm par bras Ivj max ° C /W °c Maßbild Outline D im ension