RT 2070 L Search Results

lc125A

Abstract: ULN2074 ULN2067 ULN2064N ULN206 ULN2064 ULN2068 ULN2066 INTEGRATED POWER SEMICONDUCTORS LTD ic501
Contextual Info: integrated power aa 4825898 r e | '4& e s & c\& ooooasfl 5 INTEGRATED POWER 82D 0 0 2 5 8 IMTB@§2MTED P O W E I? SEM IC O N D U C TO R S, LTD . 1.5 Amp Quad Darlington Arrays 7 ^ 4 3 - 2 - ^ Description Features These high-voltage, high-current darlington

1N4148

Abstract: IDTQS34XVH245 LMV321 MS-013 PI5C6800 S39421 SMH4042A SN74CBT6800
Contextual Info: SUMMIT SMH4042A MICROELECTRONICS, Inc. Distributed Power Hot-Swap Controller for CompactPCI Preliminary FEATURES l Full Voltage Control for Hot Swap Applications w 15V High Side Driver Generation Allows use of Low On Resistance N-Channel FETs w Under-Voltage Lockout

2sk77

Contextual Info: SANYO S E M I C O N D U C T O R CORP 52E D • 7 cjci7Q7b □ D 0 7 l434 5 ■ FC11 'T - Z l - Z S # 2070_ N-Channel Junction Silicon FET Low-Frequency General-Purpose A m p, Differential Am p Applications F e a tu re s • Adoption of FBET process

06D2

Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 2800 V 620 A 970 A 8000 A 0.92 V 0.780 mΩ Ω Phase Control Thyristor 5STP 06D2800 Doc. No. 5SYA1020-04 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1800 V 1660 A 2610 A 21000 A 0.83 V 0.230 mΩ Ω Phase Control Thyristor 5STP 18F1800 Doc. No. 5SYA1028-04 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

5STP21F1200

Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1400 V 1960 A 3080 A 25000 A 0.75 V 0.157 mΩ Ω Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA1023-04 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

ic 3842

Contextual Info: Product Brief GREEN MODE PWM CONTROLLER Description The AP384XG is a Green Mode PWM controller. It is specially designed for off-line AC-DC adapter and battery charger applications where both needs for low standby power and high efficiency in normal operation are

MFMR12

Abstract: water clear led 5mm 2000mcd BA9CW230A 550mc LED 10mm white 220V LED Bulb circuit 8mm LED superbright Bright white 40v neon lamp 24VAC LED Lamp diode sy 345
Contextual Info: Q-Series Panel Mount LED Indicators EN G 2 Q-SERIES Panel Mounting LED Indicators Apem is one of the world’s largest manufacturers of professional switches and switch panels. This has now been complemented with a NEW expanded range of panel mounting LED indicators.

2N6477

Abstract: BD278 2N1482 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le a 1 .S A max. <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* PT - 8.7S W m u . TO-391* lc » 3.S A max. Py « 10 W max. (TO-391* lc * 4 A max. Pt - GO W max. < T 0 6 6 *

Contextual Info: SiG E C P L E S S E Y S E M I C O N D U C T O R S DS4153-3.0 DSF21545SV FAST RECOVERY DIODE KEY PARAMETERS V 4500V y brm 3230A Jf AV 20000A FSM 1800HC Or 7.0|iS V APPLICATIONS • The D SF21545S V is a purpose designed freewheel diode to complement the D G 858B W G T O in Inverter

2SC4365

Abstract: 2SC4402 SK200
Contextual Info: SANYO SEMICONDUCTOR CORP SSE 7=1=1707^ D D O O böbT 2SC4402 2 T-3Ì-/7 NPN Epitaxial Planar Silicon Transistor 2059 V/U M IX, OSC, Low-Voltage Amp Applications 2755 Applications • VHFAJHF MIX/OSC, low-voltage high-frequency amplifiers Features fT=3.0GHz typ Vce = 3V

693F TRANSISTOR

Abstract: 693F N20J transistor 693f 2SC2814 2SC28H II04A
Contextual Info: SAN YO S E M I C O N D U C T O R CORP TTTTOTb 5SE D OQDbTl? T • ' 3 'I S 2SC2814 ♦ NPN Epitaxial Planar Silicon Transistor 2018A High-Frequency General-Purpose Amp Applications 693F Features . V ery small pack a g e ena b l i n g compactness and slimness of sets.

2N3442

Abstract: Transistor bdy 11 BDY74 transistor 2N3 Y7427 Transistor BF 312 BDX20
Contextual Info: * 2 I\I 3442 BDY 74 NPN SILICON TRANSISTOR, HOMOBASE T R A N S IS T O R N P N S IL IC IU M , H O M O B A S E 2N 3442 compì, o f BDX 20 Preferred device D is p o s itif recommandé • LF large signal power amplificateur 140 V 2N 3442 2 0 V BDY 74 V -«

Contextual Info: HYM64V1605GU-50/-60 HYM64V1645GU-50/-60 HYM72V1605GU-50/-60 HYM72V1645GU-50/-60 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 168pin unbuffered DIMM Module with serial presence detect • 168 Pin JE D E C Standard, Unbuffered 8 Byte Dual In-Line Memory Module

2SA1731

Contextual Info: SANYO SEMICONDUCTOR CÔRP SSE D 7 cH 7 0 7 b 0007CH1 2SA1731 1 T - 3 7 - I S PNP Epitaxial Planar Silicon Transistor 2044 High-Speed Switching Applications S3135A F e a tu re s • Adoption of FBET, MBIT processes • Large current capacity •Low collector-to-emitter saturation voltage

th 31543

Contextual Info: Ordering number:EN 3154 F C 11 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amp, Differential Amp Applications F e a tu re s • Adoption of FBET process • Composite type with 2 transistors contained in the CP package currently in use, improving the

Contextual Info: SANYO SEMICONDUCTOR CORP 2SE D 7T=i707L GG0hñ3S 7 T-31-n 2SC377 4 20 18 A N PN Epitaxial Pianar Silicon Transistor UHF Low-Noise Wide-Band Amp Applications 1947B Applications . UHF low-noise ampi:ifiers, wide-band amplifiers Features . Small noise figure : NF=2.2dB typ f=0.9GHz .

APT0406

Abstract: APT0501 APT0502 APTM50AM35FTG vds250
Contextual Info: APTM50AM35FTG VDSS = 500V RDSon = 35mΩ typ @ Tj = 25°C ID = 99A @ Tc = 25°C Phase leg MOSFET Power Module Q1 G1 OUT S1 Q2 G2 S2 0/VBUS G2 S2 VBUS 0/VBUS NTC1 OUT OUT S1 S2 NTC2 G1 G2 NTC1 Application • Welding converters • Switched Mode Power Supplies

99A diode

Abstract: APT0406 APT0501 APT0502 APTM50SKM35TG
Contextual Info: APTM50SKM35TG Buck Chopper MOSFET Power Module NT C2 Application • AC and DC motor control • Switched Mode Power Supplies Q1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged

MC10EP89

Abstract: MC10SX1190 MC10SX1190DT MC10SX1190DTG
Contextual Info: MC10SX1190 Fibre Channel Coaxial Cable Driver and Loop Resiliency Circuit Description The MC10SX1190 is a differential receiver, differential transmitter specifically designed to drive coaxial cables. It incorporates the output cable drive capability of the MC10EP89 Coaxial Cable Driver with

SANYO marking kf

Abstract: S1U MARKING 2SC3772 VCB5167 marking Sanyo
Contextual Info: S A N Y O S E M I C O N D U C T O R C O R P E S E D 7 1 e l 7 7 t G b 2 7 f i T-3H7 2SC3772 NPN Epitaxial Planar Silicon Transistor 2018A UHF OSC, MIX, Low-Noise Wide-Band Amp Applications 1945B Applications . UHF frequency converters, local oscillators, low-noise amplifiers, wide-band

2SC4452

Abstract: QVC5 Q60H
Contextual Info: SANYO SEMICONDUCTOR CORP S2E D 7=^707!= G Q 0 7 1 D 1 Q T-3S -0 ? 2SC4452 • N P N Epitaxial Planar Silicon Transistor 20S9 High-Speed Switching Applications 2811 F e a tu re s • F ast switching speed • Low collector saturation voltage • High gain-bandwidth product

NRSA101M25V6.3X11

Contextual Info: • CASE SIZE TABLE 40 5 ±1 .0 5 63 8 10 1 2 .5 16 16 F*0 5 20 25 3.5 5 5 7 5 7 .5 d tO 1 0.5 05 06 0 .8 0 .8 11 11 12 L 11 12 0 .6 0 .6 16;20;25 12;16;20 L - 20 25 3 16 : L * 1 . 5 ; 16,2D;25;30.35 20;25;30.35,<i: 35 40 L t 2 0 •R X jg § ¥ fé ^Ì\ £ £ « £ & £ « $ *

c 30275

Abstract: 03A1600 5STP 03A1200
Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1800 V 325 A 510 A 5000 A 0.89 V 0.850 mΩ Ω Phase Control Thyristor 5STP 03A1800 Doc. No. 5SYA1032-01 Sep. 01 • Designed for traction, energy and industrial applications • Optimum power handling capability Blocking