RT 2070 L Search Results

heidenhain rod 426 1024

Abstract: HEIDENHAIN rod 430 heidenhain rod 426 ROD 431 heidenhain rod 431 pinbelegung heidenhain encoder rod 431 Heidenhain ROD 431 Transistor hall s41 nf schaltungen HEIDENHAIN rod
Contextual Info: Digitaler Servoverstärker AX2040/2070 Montage, Installation, Inbetriebnahme Bewahren Sie das Handbuch als Produktbestandteil während der Lebensdauer des Servoverstärkers auf. Geben Sie das Handbuch an nachfolgende Benutzer oder Besitzer des Servoverstärkers weiter.

lc125A

Abstract: ULN2074 ULN2067 ULN2064N ULN206 ULN2064 ULN2068 ULN2066 INTEGRATED POWER SEMICONDUCTORS LTD ic501
Contextual Info: integrated power aa 4825898 r e | '4& e s & c\& ooooasfl 5 INTEGRATED POWER 82D 0 0 2 5 8 IMTB@§2MTED P O W E I? SEM IC O N D U C TO R S, LTD . 1.5 Amp Quad Darlington Arrays 7 ^ 4 3 - 2 - ^ Description Features These high-voltage, high-current darlington

2n3773 power Amplifier

Abstract: 2N3055 BD278A 2N1482 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220
Contextual Info: Ic to 80 A . Pt to 300 W . V c E to 170 V H O M E T A X IA L -B A S E N-P-N POW ER T Y P E S <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* le a 1 .S A m ax. P T - 8 .7 S W m u . TO-391* A it . . A A i 9U X 9U lc » 3 .S A m ax. P y « 10 W m ax. (TO-391*

1N4148

Abstract: IDTQS34XVH245 LMV321 MS-013 PI5C6800 S39421 SMH4042A SN74CBT6800
Contextual Info: SUMMIT SMH4042A MICROELECTRONICS, Inc. Distributed Power Hot-Swap Controller for CompactPCI Preliminary FEATURES l Full Voltage Control for Hot Swap Applications w 15V High Side Driver Generation Allows use of Low On Resistance N-Channel FETs w Under-Voltage Lockout

E.E.O rotating

Abstract: isolation transformer 50 kVA HEIDENHAIN rod 430 heidenhain rod 450 AX2070 schematic diagram 230VAC to 24VDC POWER SUPPLY SERVO MOTOR programming beckhoff AX2040 manual Encoder Rod 426 FRS-R-80
Contextual Info: Digital Servo Amplifier AX2040/2070 Assembly, Installation, Setup Keep all product manuals as a product component during the life span of the servo amplifier. Pass all product manuals to future users / owners of the servo amplifier. Edition 06/2007 Previous versions :

Contextual Info: Catalog 65481 AMP Sealed Connectors Note: This index lists all cataloged parts by base no. only. Complete part nos. with prefixes and/or suffixes are shown on the page(s) indicated. Part Number Index Page P a rt No. Page 171630 8-9 184008 58, 63 206151 40

5STP06D2600

Contextual Info: Key Parameters VDSM = 2800 ITAVM = 590 ITRMS = 920 ITSM = 8000 VT0 = 0.92 rT = 0.780 V A A A V mΩ Phase Control Thyristor 5STP 06D2800 Doc. No. 5SYA 1020-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

Contextual Info: VDSM = 2800 V ITAVM = 620 A ITRMS = 970 A ITSM = 8000 A VT0 = 0.92 V rT = 0.780 mΩ Phase Control Thyristor 5STP 06D2800 Doc. No. 5SYA1020-04 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

5STP24H2800

Abstract: ABB 5STP abb S 24H220 24H2600 24H2800
Contextual Info: Key Parameters VDSM = 2800 ITAVM = 2625 ITRMS = 4120 ITSM = 43000 VT0 = 0.85 rT = 0.160 V A A A V mΩ Phase Control Thyristor 5STP 24H2800 Doc. No. 5SYA 1047-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

ABB 5STP 12

Abstract: 5STP03A1600
Contextual Info: Key Parameters VDSM = 1800 ITAVM = 325 ITRMS = 510 ITSM = 5000 VT0 = 0.89 rT = 0.850 V A A A V mΩ Phase Control Thyristor 5STP 03A1800 Doc. No. 5SYA 1032-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

5STP 27H1800

Abstract: 27H1200 27H1800
Contextual Info: Key Parameters VDSM = 1800 ITAVM = 3000 ITRMS = 4710 ITSM = 47000 VT0 = 0.88 rT = 0.103 V A A A V mΩ Phase Control Thyristor 5STP 27H1800 Doc. No. 5SYA 1048-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

Contextual Info: Key Parameters VDSM = 4200 ITAVM = 425 ITRMS = 660 ITSM = 6400 VT0 = 1.00 rT = 1.500 V A A A V mΩ Phase Control Thyristor 5STP 04D4200 Doc. No. 5SYA 1025-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

ABB 5STP 16F2600

Abstract: 5STP 16F2600 16F2200 5STP 16F2800 16F2800 ABB 5STP 12 5STP16F2200
Contextual Info: Key Parameters VDSM = 2800 ITAVM = 1580 ITRMS = 2480 ITSM = 18000 VT0 = 0.82 rT = 0.370 V A A A V mΩ Phase Control Thyristor 5STP 16F2800 Doc. No. 5SYA 1022-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

07D18

Abstract: 5STP 07D1600
Contextual Info: VDSM = 1800 V ITAVM = 730 A ITRMS = 1150 A ITSM = 9000 A VT0 = 0.80 V rT = 0.540 mΩ Phase Control Thyristor 5STP 07D1800 Doc. No. 5SYA1027-05 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

5STP 07D1200

Abstract: 5STP 07D1600 5STP07D1600 07d18
Contextual Info: Key Parameters VDSM = 1800 ITAVM = 700 ITRMS = 1090 ITSM = 9000 VT0 = 0.80 rT = 0.540 V A A A V mΩ Phase Control Thyristor 5STP 07D1800 Doc. No. 5SYA 1027-03 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

Contextual Info: Key Parameters VDSM = 1800 ITAVM = 325 510 ITRMS = ITSM = 5000 VT0 = 0.89 = 0.850 rT V A A A V mΩ Ω Phase Control Thyristor 5STP 03A1800 Doc. No. 5SYA 1032-01 August, 00 Features • Patented free-floating silicon technology • Low on-state and switching losses

thyristor ABB 5stp 18f1600

Contextual Info: Key Parameters VDSM = 1800 ITAVM = 1845 ITRMS = 2890 ITSM = 21000 VT0 = 0.83 rT = 0.230 V A A A V mΩ Phase Control Thyristor 5STP 18F1800 Doc. No. 5SYA 1028-03 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

5stp18h4200

Abstract: 18H3600
Contextual Info: Key Parameters VDSM = 4200 ITAVM = 2075 ITRMS = 3260 ITSM = 32000 VT0 = 0.96 rT = 0.285 V A A A V mΩ Phase Control Thyristor 5STP 18H4200 Doc. No. 5SYA 1046-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

ABB 4600

Abstract: ABB 5STP 12 5STP12F4200 5STP 12F4200
Contextual Info: Key Parameters VDSM = 4200 ITAVM = 1225 ITRMS = 1920 ITSM = 15000 VT0 = 0.95 rT = 0.575 V A A A V mΩ Phase Control Thyristor 5STP 12F4200 Doc. No. 5SYA 1021-02 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

2sk77

Contextual Info: SANYO S E M I C O N D U C T O R CORP 52E D • 7 cjci7Q7b □ D 0 7 l434 5 ■ FC11 'T - Z l - Z S # 2070_ N-Channel Junction Silicon FET Low-Frequency General-Purpose A m p, Differential Am p Applications F e a tu re s • Adoption of FBET process

z9s2

Abstract: Robison c 5030 fo
Contextual Info: DATE S TM . D O -NO T-SCALE o 170C05 09 R E V IS IO N R E C O R D AUTH DR. CK. ALL ACTIVE PARTS - DIM W +/- .015 WAS W +/-.010 273775 JVM GER N* 00 OJ "CD <0J l o UNIVERSAL UNIVERSAL RIGHT HAND GENERAL OLECTTOC OTVWf PACKATO DIM ENSIONING P O IN T MOTORS CORPORATION

06D2

Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 2800 V 620 A 970 A 8000 A 0.92 V 0.780 mΩ Ω Phase Control Thyristor 5STP 06D2800 Doc. No. 5SYA1020-04 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

5STP17H5200

Contextual Info: Key Parameters VDSM = 5200 ITAVM = 1975 ITRMS = 3100 ITSM = 29000 VT0 = 1.02 rT = 0.320 V A A A V mΩ Phase Control Thyristor 5STP 17H5200 Doc. No. 5SYA 1049-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

Contextual Info: VDSM = 1800 V ITAVM = 3000 A ITRMS = 4710 A ITSM = 47000 A VT0 = 0.88 V rT = 0.103 mΩ Phase Control Thyristor 5STP 27H1800 Doc. No. 5SYA1048-02 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications