RT 108 POWER TRANSISTOR Search Results

SD1428

Abstract: sd1446 SD1477 M113 M135 M164 M175 M177 SD1273 SD1480
Contextual Info: SILICON POWER TRANSISTORS ÌPRf i m A broad range of devices are offered for the popular frequency bands in the VHF spectrum. Applications include low and mid-band FM mobile radio, FM broadcast and aircraft communications. .380 4LFL M113 .500 4LFL (M174)

Contextual Info: TO-92 PACKAGE TEMPERATURE SENSOR NTC Thermistor Probes Applications • • • • Radial NTC disc replacement Probe designs PCB temperature monitoring Power supply fan control Operating Temperature Range -40° to 140°C Thermal Time Constant 3 Seconds typical oil ; 11 Seconds typical (air)

NE42484A

Abstract: transistor NEC D 986 NE42484A-SL ne42484 IC ATA 2388 L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking L nec gaas fet marking NEC Ga FET marking A KU 506 transistor
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET PACKAGE DIMENSIONS Unit : mm DESCRIPTION The N E42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

NEC 2532 n 749

Abstract: NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain • Low Voltage Operation

Contextual Info: //outran_raoMtgr Devices, Inc. AMP. CROSS REFERENCE— PEAK CURRENT TO CHIP N P N PLANAR POW ER TRANSISTOR CHIP NUMBER DESCRIPTION PAGE No. 0 .1 A . 2.0A. 2.0 A. 3.0A. 4 .5 A .

lts 542

Abstract: UFN540 FN640
Contextual Info: POWER MOSFET TRANSISTORS U F N 5 4 0 U F N 5 4 1 100 Volt, 0.0 85 Ohm N-Channel U F N 5 4 2 U F N 5 4 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.

MRC252

Abstract: depletion mode BSD254 BSD254A BSD254AR
Contextual Info: Philips Semiconductors ^ 7 1 I 0 flgb 0 Db7 716 Ib b N-channel depletion mode vertical D-MOS transistors FEATURES • P H IN ^Productspecilication BSD254; BSD254A; BSD254AR ’ QUICK REFERENCE DATA • High-speed switching • No secondary breakdown. SYMBOL

fr 309

Abstract: BC307 BC177 BC179 BC 179 BC308 BC 307 bc 308 BC309 tfk 731
Contextual Info: BC 177 • BC 178 • BC179 BC 307 - BC 308 • BC 309 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and d river stages Besondere Merkmale: Features: • BC 179, BC 309 fü r rauscharm e Vorstufen

Contextual Info: LT3439 Slew Rate Controlled Ultralow Noise1A Isolated DC/DC Transformer Driver FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LT 3439 is a push-pull DC/DC transformer driver that reduces conducted and radiated electromagnetic interference EMI . Ultralow noise and EMI are achieved by

BD202 philips

Abstract: bd204 Z624 BDX78 saf* philips bd202
Contextual Info: BD202 BD204 BDX78 PHILIPS INTERNATIONAL SbE D • 711002b 004Sôlb Til H P H I N T - J 3 - 2 ./ SILICON EPITAXIAL-BASE POWER TRANSISTORS PNP transistors in a plastic envelope. With their npn complements BD201, BD203, and BDX77,they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 4 Î2 or

FAN6747

Abstract: hv 102 1N4007 JESD22-A114 SMPS INRUSH CURRENT LIMITER FAN67 fan6747l
Contextual Info: FAN6747 Highly Integrated Green-Mode PWM Controller Features Description ƒ ƒ ƒ High-Voltage Startup ƒ ƒ Built-in 8ms Soft-Start Function The highly integrated FAN6747 PWM controller provides several features to enhance the performance of flyback converters. To minimize standby power

Contextual Info: HEULETT-PACKAR»/ CPIPNTS blE D warn HEWLETT • H4H7SA4 OOOTflbl bSb B H P A AT-60570 PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Features 70 mil Package • • Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 dB typical at 4.0 GHz

IB0810M100

Abstract: l-band 60 watt transistor x band radar U 855 D nc50
Contextual Info: Part Number: Integra IB0810M100 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M100 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C mode at Vcc=36V,

fan6747l

Abstract: FAN6747LMY
Contextual Info: FAN6747 Highly Integrated Green-Mode PWM Controller Features Description ƒ ƒ ƒ High-Voltage Startup ƒ ƒ Built-in 5ms Soft-Start Function The highly integrated FAN6747 PWM controller provides several features to enhance the performance of flyback converters. To minimize standby power

smd-transistor DATA BOOK

Abstract: SMD Transistor rt/duroid 6006 TRANSISTOR SMD catalog transistor SMD DK Philips 2222-581 smd-transistor -1.am Duroid 6006 SMD Transistor 6f smd transistor l6
Contextual Info: APPLICATION NOTE 4 W Linear Class-AB amplifier with the BLV2042 for 1930 −1990 MHz AN98018 Philips Semiconductors 4 W Linear Class-AB amplifier with the BLV2042 for 1930 −1990 MHz CONTENTS 1 INTRODUCTION 2 TRANSISTOR BACKGROUND 3 AMPLIFIER DESCRIPTION

600uH-PQ2620

Abstract: SG5841JSZ SG5841SZ THER2 Thermistor TTC104 SOIC127P600X175-8M sg5841dz PQ2620 SG5841 May 2006 Datasheet SG5841JDZ SG5841J
Contextual Info: SG5841J — Highly Integrated Green-Mode PWM Controller Features Description ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ The highly integrated SG5841/J series of PWM controllers provides several features to enhance the performance of flyback converters. Green-Mode PWM Controller

Contextual Info: LT3476 High Current Quad Output LED Driver FEATURES n n n n n n n n n n DESCRIPTION True Color PWMTM Dimming Delivers Up to 5000:1 Dimming Ratio In Boost Configuration LED Current Regulation with High-Side Sense VADJ Pin Accurately Sets LED Current Sense

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

PWM controlled voltage regulator

Abstract: PWM to voltage converter APW7025 mosfet diagram amplifier
Contextual Info: APW7025 Advanced PWM and Dual Linear Power Control Features General Description • The APW7025 integrates a PWM controller and Dual linear controller, as well as the monitoring and protection functions into a single package , which provides three controlled power outputs with over-voltage and over-current protections. The PWM controller regulates the DDR reference voltage with a synchronous-rectified buck converter. The linear controller regulates power for microprocessor core voltage

NCP1392BD

Abstract: IC 1392B 1392B ballast Self-Oscillating NCP1392 smps high power smps resonant llc NCP1392BDR2G SELF OSCILLATING HALF BRIDGE DRIVER IC DATA SHEET LLC resonant converters
Contextual Info: NCP1392B High-Voltage Half-Bridge Driver with Inbuilt Oscillator The NCP1392B is a self−oscillating high voltage MOSFET driver primarily tailored for the applications using half bridge topology. Due to its proprietary high−voltage technology, the driver accepts bulk

Contextual Info: LT3508 Dual Monolithic 1.4A Step-Down Switching Regulator DESCRIPTION FEATURES n n n n n n n n n n Wide Input Voltage Range: 3.7V to 36V Two 1.4A Output Switching Regulators with Internal Power Switches Adjustable 250kHz to 2.5MHz Switching Frequency Synchronizable over the Full Frequency Range

LINEAR MARKING lt3508euf

Abstract: LT3508 FE LT3508IFE PBF LT3508EFE 3508 fe MMSD4148/FDD8780 equivalent
Contextual Info: LT3508 Dual Monolithic 1.4A Step-Down Switching Regulator DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Wide Input Voltage Range: 3.7V to 36V Two 1.4A Output Switching Regulators with Internal Power Switches Adjustable 250kHz to 2.5MHz Switching Frequency

MMSD914LT1

Abstract: 3508F 3508fe LT1765 Step-Down Switching Regulator 3508 LT3508 FE
Contextual Info: LT3508 Dual Monolithic 1.4A Step-Down Switching Regulator DESCRIPTION FEATURES n n n n n n n n n n The LT 3508 is a dual current mode PWM step-down DC/DC converter with internal power switches capable of generating two 1.4A outputs. The wide input voltage range

l14 254

Abstract: AN98017 transistor 935 SMD AL SMD transistor 821 ceramic capacitor Philips 2222-581 TRANSISTOR SMD catalog AN98019 AN98026 BLV904
Contextual Info: APPLICATION NOTE 5 W Class-AB Amplifier with the BLV904 for 935 − 960 MHz AN98019 Philips Semiconductors 5 W Class-AB Amplifier with the BLV904 for 935 − 960 MHz Application Note AN98019 INTRODUCTION This application note contains information on a 5 W class-AB amplifier based on the SMD transistor BLV904. The