RSU 72 Search Results

Contextual Info: Electrolytic Capacitors Radial, standard NEW 134 RLP 5 097 RLP 7 037 RSM 038 RSU Radial Low Profile Radial Standard Miniature Radial Standard Ultra Miniature 044 RSH Radial Low Profile Useful life 1500 h/85˚C 1500 h/85˚C 2500 h/85˚C 2500 h/85˚C Ø ≤ 8mm

Contextual Info: Radial, standard Product information Series Useful life 134 RLP 5 097 RLP 7 037 RSM 038 RSU 044 RSH Radial low profile Radial low profile Radial standard miniature Radial standard ultra miniature Radial standard high voltage 1500 h/85 °C 1500 h/85 °C 2500 h/85 °C

Contextual Info: 097 RLP 7 www.vishay.com Vishay BCcomponents Aluminum Capacitors Radial Low Profile, 7 mm FEATURES • • • • 038 RSU Fig.0 Component 097 RLP 7 outlines. higher CV-values 7 mm lower height 5 mm 134 RLP 5 Fig. 1 APPLICATIONS • • • • QUICK REFERENCE DATA

Contextual Info: POWER TYPE 氧化金屬膜電阻器 RSU METAL OXIDE FILM RESISTOR Standard Type 小型氧化金屬膜電阻器 RSS METAL OXIDE FILM RESISTOR (Small Type 超小型氧化金屬膜電阻器 RSP METAL OXIDE FILM RESISTOR (Super Small Type) •結構圖 Construction

Contextual Info: POWER TYPE RSU 氧化金屬膜電阻器 RSS 小型氧化金屬膜電阻器 RSP 超小型氧化金屬膜電阻器 METAL OXIDE FILM RESISTOR Standard Type METAL OXIDE FILM RESISTOR (Small Type) METAL OXIDE FILM RESISTOR (Super Small Type) •結構圖 Construction

25AA20

Contextual Info: • Maximum Ratings S ym bol U n it SG 25AA20 SG 25AA30 SG 25AA40 R e p e titive P e a k R e ve rse V oltag e V rru V 200 300 400 500 N o n -R e p e titiv e P e a k R e ve rse V o lta g e V rsu V 240 360 48 0 600 720 R e p e titiv e P e a k O ff-S ta te V oltag e

TT 2146

Abstract: U150C 72wma 54RC-3 25CC 858C C160 dsei 30
Contextual Info: • 4bflb2Bb 00D]ib34 733 M I X Y □IXYS DSEI30 IFAV Fast Recovery Epitaxial Diode = 30 A v„„. = 800-1000 V < 50 ns v’ rsu T ype V V 800 B00 D S E I3 0 -0 8 A 1000 1000 D S E I 3 0 *1 0 A S ' « H - 5 Sym bol T e s t c o n d itio n s •fsms T VJ Tc

33072

Abstract: 34072 IC 34072 MC35072U MC33074D MC35074L MC35072 PSRI MC34071 MC33071
Contextual Info: MC34071,2,4 MC35071,2,4 MC33071,2,4 MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Slew Rate, Wide Bandwidth, Single Supply Operational Amplifiers Quality bipolar fabrication with innovative design concepts are employed for the M C33071/72/74, M C34071/72/74, M C35071/72/74 se rie s of monolithic

LT4239

Abstract: LT4217 TO-117A 25CC CD6150 LT423 1533 ie 5
Contextual Info: T~S3~0$^ 1 2 E 0 | L 3 i,7 2 S 4 00Ö 72M 0 □ | MOTOROLA • SEM ICO NDUCTO R TECHNICAL DATA MOTOROLA SC XSTRS/R F h h h h h h ih h m h b h M h h _ L T 4217 L T 4239 C D 61 50 The RF Line N P N S ilic o n H ig h F requ en cy T ra n sisto rs |£ = 400 m A

MC1439

Abstract: MC1439G equivalent MC1460G MC1539G metal package case 601 MOTOROLA MC1439G MC1439P1 MC1539 Motorola MC15 MCI439
Contextual Info: MOTOROLA MCI 439 MC1539 • SEMICONDUCTOR TECHNICAL DATA U N C O M P E N SA T E D OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER SILIC O N M O NO LITHIC IN T E G R A T E D C IRC U IT . . . designed for use as a summing amplifier, integrator, or am ­ plifier with operating characteristics as a function of the external

transistor tic 106 N

Abstract: bly power transistor transistor tic 226 transistor SE 431
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA D e sig n e r’s Data Sheet M GW 1 2 N 1 2 0 D Insulated G ate Bipolar Transistor with Anti-Parallel Diode Motorola Prafarrad Davlca N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN TO -247 12 A @ 90 C 20 A @ 25 C

MRF586

Abstract: F587 033 motorola MRF587
Contextual Info: MOTOROLA SEMICONDUCTOR MRF586 MRF587 TECHNICAL DATA The RF Line N P N S ILIC O N H IG H FR E Q U E N C Y T R A N S IS T O R S . . designed for use in high-gain, low-noise, ultra-linear, tuned and wideband amplifiers Ideal for use in CATV, MATV, and instrumen­

mps1983

Contextual Info: MOTOROLA SEMICONDUCTOR MPS901 MPS1983 TECHNICAL DATA T h e R F L in e 1C = 3 0 m A HIGH FREQUENCY TRANSISTORS N P N S IL IC O N H IG H - F R E Q U E N C Y T R A N S IS T O R NPN SILICION . . . designed prim arily for use in high-gain, low-noise small-signal

BF431L

Abstract: MRF9011 MRF9011L IC 21069 tuner LG BF431 C 318B 725M SF-11N
Contextual Info: 12E D I b3fc.725M MOTORCLA MOTOROLA SC DGÖÖCm XSTRS/R Ü | T^ Ì/"/7 F S E M IC O N D U C T O R TECHNICAL DATA M RF9011 BF431* M RF9011L B F431L* The RF Line N P N S ilic o n H igh -F re q u e n c y T r a n s isto rs ‘ European Part N u m b e rs . . . d esign ed prim arily for use in high-gain, low -noise sm all-sign al am plifiers for

ZPD 5.1 ITT

Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Contextual Info: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers

2N6370

Abstract: MRF-410A RF410A mrf410 vk200.10 MRF410A
Contextual Info: 12E D I b3b75S4 GGa7Ì.57 5 | MO TOROLA SC MOTOROLA XSTRS /R F T - 33 S E M IC O N D U C T O R TECHNICAL DATA M RF410 M RF410A The RF Line N P N S ilic o n RF P o w e r T ra n sisto rs 10 W -30 MHz RF POWER TRANSISTORS NPN SILICON . designed for high gain driver and output linear amplifier stages in 1.5 to 30 M Hz

MRF162

Abstract: motorola TE 901 Triode rs 733 P011t
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF162 The RF MOSFET Line 15 W N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR 2 .0 -4 0 0 M H z N-CHANNEL MOS BROADBAND RF POWER d e s ig n e d fo r w id e b a n d la rg e -s ig n a l o u tp u t and d riv e r a p p lic a ­

MRF148

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line 30 W 2 .0 -1 7 6 M H z N-CHANNEL MOS LINEAR RF POWER N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR FET . d esigned for pow er am plifier applications in industrial, c o m m e r­ cial and am ateur radio equipm ent to 1 75 MHz.

bzx55c 12v

Abstract: rsl2 24v LS 1316 TEA7092 TEA7092TQ TEA7092TQT TEA7540 TQFP44
Contextual Info: TEA7092 TELEPHONE ANALOG FRONT END . . . . . . . . SPEECH DC LINE CURRENT RANGE FROM 6 TO 120mA EXTERNALLY ADJUSTABLE : - Tx AND Rx GAIN - MAXIMUM TRANSMIT LEVEL - RETURN LOSS - SIDETONE NETWORKS - Tx AND Rx AGC LINE CURRENT START UP VALUE AND SLOPE SOFTCLIPPING ON Tx CHANNEL

D1816

Abstract: CS4210A
Contextual Info: Geode CS4210 IEEE 1394 OHCI Controller General Description

















Eight isochronous transmit contexts Eight isochronous receive contexts Capable of reading a 128-byte descriptor in one burst 128 byte, zero wait state bursting

P1394a irmc

Abstract: CS4210A IR 440H AD10 AD27 AD29 AD30 CRC32 CS4103 CS4210
Contextual Info: Geode CS4210 IEEE 1394 OHCI Controller General Description The National Semiconductor Geode™ CS4210 is a PCIbased IEEE 1394 OHCI Open Host Controller Interface controller. The CS4210 provides an implementation of the IEEE 1394 Link Layer functionality according to the programming model defined by 1394 OHCI Specification Version 1.0. It supports high speed serial communication up to

rsl2 24v

Abstract: BZX55C12V bzx55c 12v uc 4538 TQFP44A isl 8878 uc 8843 TEA7092 BZX55C47V TEA7540
Contextual Info: TEA7092 TELEPHONE ANALOG FRONT END . . . . . . . . SPEECH DC LINE CURRENT RANGE FROM 6 TO 120mA EXTERNALLY ADJUSTABLE : - Tx AND Rx GAIN - MAXIMUM TRANSMIT LEVEL - RETURN LOSS - SIDETONE NETWORKS - Tx AND Rx AGC LINE CURRENT START UP VALUE AND SLOPE SOFTCLIPPING ON Tx CHANNEL

V 518 J19

Abstract: j6812 MRF837 transistor j147 J-6812
Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MRF837 The RF Line 750 m W NPN SILICON RF LOW POWER TRANSISTOR . d e sign e d prim arily for w ide b and large s ign al predriver stage s in 800 M H z an d U H F frequency ranges. 870 M H z RF LOW POWER TRANSISTOR

wireless mobile charging through microwaves

Abstract: fm transmitter 300m range GSM frequency reuse telephone wires datasheet 12 km fm transmitter DECT base station 2.4 GHz fm based short range wireless communication GSM sectoring antenna mobile battery charging automatic off pstn subscriber interface
Contextual Info: corDECT Training Manual Rev. No. 0.01 a corDECT Table of Contents 1. Introduction. 4 1.1 Important Attributes of a WLL system . 4