RSR025N Search Results

RSR025N03

Contextual Info: RSR025N03 Transistors Switching 30V, 2.5A RSR025N03 zExternal dimensions (Unit : mm) TSMT3 1.0MAX. 2.9±0.1 0.85±0.1 0.7±0.1 0.4 +0.1 −0.05 0.3~0.6 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3) .

Contextual Info: RSR025N05FRA Nch 45V 2.5A Power MOSFET Datasheet AEC-Q101 Qualified lOutline VDSS 45V RDS on (Max.) 100mW ID 2.5A PD 1.0W TSMT3 (3) (1) (2) lInner circuit lFeatures 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).

Contextual Info: RSR025N05 Nch 45V 2.5A Power MOSFET Datasheet lOutline VDSS 45V RDS on (Max.) 100mW ID 2.5A PD 1.0W lFeatures TSMT3 (3) (1) (2) lInner circuit 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).

RSR025N03

Abstract: RG-107
Contextual Info: RSR025N03 Transistors Switching 30V, 2.5A RSR025N03 zExternal dimensions (Unit : mm) TSMT3 1.0MAX. 2.9±0.1 0.85±0.1 0.7±0.1 0.4 +0.1 −0.05 0.3~0.6 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3) .

Contextual Info: RSR025N05 Datasheet Nch 45V 2.5A Power MOSFET lOutline VDSS 45V RDS on (Max.) 100mW ID 2.5A PD 1.0W lFeatures TSMT3 (3) (1) (2) lInner circuit 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).

Contextual Info: RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) 1.6 2.8 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3) .

Contextual Info: RSR025N03 Transistors Switching 30V, 2.5A RSR025N03 !External dimensions (Unit : mm) TSMT3 1.0MAX. 2.9±0.1 0.85±0.1 0.7±0.1 0.4 +0.1 −0.05 0.3~0.6 !Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3) .

diode

Abstract: RSR025N03 means 125 diode Z diode RSR025N03 RG107
Contextual Info: RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) 1.6 2.8 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3) .

Contextual Info: RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 External dimensions Unit : mm Structure Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) 1.6 2.8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3) .

Contextual Info: Data Sheet 4V Drive Nch MOSFET RSR025N05  Dimensions Unit : mm Structure Silicon N-channel MOSFET TSMT3 Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. (3) (1) (2) Application

RSR025N03

Contextual Info: RSR025N03 Transistors Switching 30V, 2.5A RSR025N03 zExternal dimensions (Unit : mm) TSMT3 1.0MAX. 2.9±0.1 0.85±0.1 0.7±0.1 0.4 +0.1 −0.05 0.3~0.6 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3) .

Contextual Info: RSR025N03FRA RSR025N03 Transistors AEC-Q101 Qualified 4V Drive Nch MOS FET RSR025N03FRA RSR025N03 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) 1.6 2.8 (2) (1) 0.95 0.95 0.16 1.9 (1) Gate (2) Source

RSR025N03

Contextual Info: SPICE PARAMETER RSR025N03 by ROHM TR Div. * RSR025N03 NMOSFET model * Date: 2006/09/19 * This model includes a diode between source and drain. *D G S .SUBCKT RSR025N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6

RSD130P10

Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
Contextual Info: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨ‫ܼׅ‬DŽ 01 MOSFET Contents

Contextual Info: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6103FV-C ●General Description The BM6103FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 350ns, and minimum input

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

Contextual Info: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6101FV-C ●Key Specifications  Isolation voltage:  Maximum gate drive voltage:  I/O delay time:  Minimum input pulse width:

RSD130P10

Abstract: RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200
Contextual Info: 2010 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.

Contextual Info: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6103FV-C General Description The BM6103FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 350ns, and minimum input

Contextual Info: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6104FV-C General Description Key Specifications     The BM6104FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 150ns, and minimum input

ICC24

Contextual Info: BM6103FV-C Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6103FV-C ●General Description The BM6103FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 350ns, and minimum input

Contextual Info: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM60013FV-C ●General Description The BM60013FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 200ns, and minimum input