RRJ DIODE Search Results

Contextual Info: CLA864A CLA864B CLA864C I .155 L l. rrJ Transistor Output GENERAL DESCRIPTION — The Clairex CLA864 series of axial lead isolators are designed for those applications where high voltage isolation requirements apply. They consist of an infrared LED coupled with an NPN phototransistor pro­

BUZ21

Abstract: schematic diagram UPS din 40040 humidity
Contextual Info: rrj SCS-THOMSON 4-1% BUZ21 * 7 / . N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on •d BUZ21 100 V 0.1 ß 19 A . 100 VOLTS - FOR DC/DC CONVERTERS . H IG H CURRENT . RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) ♦ . ULTRA FAST SWITCHING

Contextual Info: r m COPYRIGHT BT TCP CONNECTOR ALL RIGHTS RESERVED. MECHANICAL: 10 ELECTRICAL: 4D15ET 10/100 BASE-T PoE CIRCUIT AA £ 0. O o a . a : Q. Q Q. + ? D1 D2 D5 D6 TOUisU^ o t<LLb=Lso nrrrm rrj SHIELD rnmn*|[]| -W-rW-KH-Kl- | |_ D3 D4 D7 D8 CMC2 CMC1 T4 T3 4»—

7a2 diode

Abstract: CT 7A2 ERA22 marking AY marking A.Y
Contextual Info: ERA22 o .5 A I Outline Drawings FAST RECOVERY DIODE : Features • m >m , 5mn lt '- y * - a K ftAiiJffi • S I tf i M arking Ultra smalt package. Possible fo r 5 m m pitch autom atic insertion Ä 7 - - 3 - K -ft Color code : Green High voltage by mesa design.

Contextual Info: FAST RECOVERY DIODE 60A /400V /trr : 60nsec KCF60A40E FEATURES o Similar to TO-247AC x 2 Case. ODual Diodes-Cathode Common o Ultra-Fast Recovery oLow Forward Voltage Drop o High Surge Capability Approx. Net Weight: 30 Grams MAXIMUM RATINGS '\T y p e Voltage Rating

Diode 20A/30v

Abstract: FCH20A03L
Contextual Info: SCHOTTKY BARRIER DIODE FCH20A03L 20 A/ 30V 3.K-122 FEATURES o T0-220AB Fully Molded ODual Diodes - Cathode Common o L o w Forw ard V oltage Drop O High Surge Capability o T j = 150°C operation 2.5Ì.0MI FCH20A.L Dimensions in mm Inches) Approx. Net Weight : 1.75 Grams

BAR19

Contextual Info: C T SG S-TH O M SO N ^ 7 # . HDlgœilLIgTOOIfSlDgi BAR 19 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE RATINGS limiting values Repetitive Peak Reverse Voltage

Contextual Info: SGS-THOMSON STH55N10 STH55N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TH 55N 10 STH55N1 OFI Vdss R D S on Id 100 V 100 V 0.030 U 0.030 S2 55 A 33 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: C T SGS-THOMSON ^ 7# . H D »H LI TO s lfS lD (g i 12P -1000 BYT FAST RECOVERY RECTIFIER DIODE • VERY HIGH REVERSE VOLTAGE CAPABILITY ■ VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING SUITABLE APPLICATIONS

Contextual Info: ERA22 o .5A I O utline D raw ings FAST RECOVERY DIODE : Features • m>m, 5 mnlt'-y*- a K ftA iiJ ffi • S I tf i M arking Ultra smalt package. Possible fo r 5 m m pitch autom atic insertion Ä 7 - - 3 - K -ft Color code : Green High voltage by mesa design.

R101

Contextual Info: 1F60A-120F/R wnmtm: Outline Drawings FAST RECOVERY DIODE MODULE • ¡N fS : Features • 'M il • K M • iSEiliftJE Small and Lightweight High Voltage • Non-insulated Type ■ ffljÊ > Applications • ^’ 7 - l ' 7 Snuber Diode ’ Maximum Ratings and Characteristics

TFM 1380 T

Contextual Info: 1D I 3 O O M - O 5 O 300a Ä ± / < 7— ✓\ ° 7 - ' Outline Drawings POWER TRANSISTOR MODULE • Features • hFE*v'' \.v High DC Current Gain • High speed switching Including Free Wheeling Diode .Insulated Type • A p p licatio n s • ’X M .t) 7*4 "/•?■>?

ESAD83-004

Abstract: LT460
Contextual Info: ESAD83-004 30 a g ± 'jv m * * y 5 j— K SCHOTTKY BARRIER DIODE : Features Low VF S uper high speed s w itc h in g . Connection Diagram High reliability by planer d esign. : Applications High speed pow er sw itch in g . M axim um Ratings and Characteristics

LTWF

Abstract: diode T-71 F151 SIH31 T151 diode b129 aabi
Contextual Info: SIH31 1 5 0 A : Outline _ Drawings GENERAL-USE RECTIFIER DIODE Features • High reverse voltage capability • Stud mounted : A pplications • '<'y'T,) —l£WW2& Battery chargers Brush-less generators • Others. M axim um Ratings and C haracteristics

CAR HORN Specification

Abstract: car horn car reverse horn car reverse horn result car reverse horn note absolute car alarm
Contextual Info: 26110.4 5349 AC SMOKE DETECTOR WITH INTERCONNECT AND TIMER GUARD2 DETECT. IN G UAR Di SENSITIVITY SET OSC, CAR. HORN 2 HORN-? The A5349CA is a low-current, CMOS circuit providing all of the required features for an ionization-type smoke detector. A networking

LT 5203

Abstract: a5201
Contextual Info: Temic TSHA520. S h m i n n d u t l •* r v GaAlAs Infrared Emitting Diodes in 05 mm (T-1% Package Description The TSH A 520. series are high efficiency infrared em itting diodes in G aA lA s on G aA lA s technology, m olded in a clear, untinted plastic package.

Contextual Info: FUJI s ik ô iE ir ü ô U Ê 2SK2766-01R N-channel MOS-FET FAP-IIS Series 800V 7A High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated 55 .3.5 0.6 > Applications -

B452

Abstract: RRJ diode h11q
Contextual Info: 2DI75Z-140 75a '• O u tlin e D ra w in g s POWER TRANSISTOR MODULE : Features • iSHJŒ High Voltage • 7 ')— f r 'l'J 's 'ÿ ÿ 'f J '— KF*3 • A S O A '7 2 ;v .' • Including Freewheeling Diode E xc e lle n t S a fe O p eratin g Area In su late d Type

M74HC174

Contextual Info: / T T S G S -T H O M S O N *7# [M œ m itg ra o W S M54HC174 M74HC174 HEX D-TYPE FLIP-FLOP WITH CLEAR • HIGH SPEED fMAX = 48 MHz TYP. at VCC = 5V ■ LOW POWER DISSIPATION ICC = 4 /iA (MAX.) at T a = 25°C ■ HIGH NOISE IMMUNITY 1 V NIH = V n il = 2 °/o V c c (MIN.)

Contextual Info: A dvanced P o w er Te c h n o l o g y • POWER MOS IVe APT5025BN -APT4525BN APT5030BN APT4530BN 500V 450V 500V 450V 23.0A 23.0A 21.0A 21.0A 0.25Q 0.25Q 0.30Q 0.30Q N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: SGS-THOMSON TDE0160 H[l g^ i[LI©¥[S(ô !HO(gi PROXIMITY DETECTOR • SUPPLY VOLTAGE : +4TO +36V ■ SUPPLY CURRENT : < 1.2mA ■ OUTPUT TRANSISTORS : I = 20mA; V ce (sat) ¿ 1 100mV ■ OSCILLATOR FREQUENCY : < 1MHz ■ LOSS RESISTANCE : 5 TO 5 0 k il DIP14

Contextual Info: bi v h {'-ÊiMM Photosensor Units Transmittive Type) ON1531 HA-(M ) ,O N1531LA-(M ) • Outline O N 1 5 3 1 H A -{ M ), O N I 5 3 1 LA —(M )l i , ^ O G a A s ^ & j f c / ' f t - K £ , 'S f t S G K * h ? - f 1 ~ K t M # # y i l a l l f & t 1 *■ 7 — 7 h T '- t o

Siemens pulse sequence

Abstract: power supply siemens s5 Siemens diode Ssi
Contextual Info: SIEMENS mmmmmmwm•■tWhP CGY 191 GaAs MMIC • • • • • Dual mode power amplifier for CDMA /TDMA portable cellular phones 29 dBm linear output power PAE=40% typ. Fully integrated 2 stage amplifier Power ramp control Input matched to 50 ohms, simple output match

250A darlington transistor

Contextual Info: POlilEREX INC m 3 ^ /m E i> m 75^41=51 D00411S ô «PRX T '2 3 ~ 3 S ~ KD7245A1 X Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Dual Darlington