ROHM MARKING HFE CODE Search Results

Contextual Info: BC847B Transistors NPN General Purpose Transistor BC847B Features 1 BVCEO < 45V IC=1mA) 2) Complements the BC857B. External dimensions (Unit : mm) 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 Packaging type SST3 Marking G1F Code T116 Basic ordering unit (pieces) 3000

Contextual Info: IMT4FRA IMT4 Transistors AEC-Q101 Qualified General purpose dual transistors IMT4 IMT4FRA 0.3Min. ROHM : SMT6 EIAJ : SC-74 JEDEC : SOT-457 3000 1.1 0.8 SMT6 T4 T108 Marking Code Basic ordering unit (pieces) 0~0.1 Package 2.8 0.15 IMT4 IMT4FRA 0.95 0.95 1.9

2SA1514K equivalent

Abstract: 2SA1514K T108 T4 MARKING *T4 MARKING IMT4
Contextual Info: IMT4 Transistors General purpose dual transistors IMT4 0.3Min. 1.1 0.8 SMT6 T4 Marking Code Basic ordering unit (pieces) 0~0.1 Package 2.8 0.15 IMT4 0.95 0.95 1.9 2.9 (1) (2) 1.6 zPackage, marking, and Packaging specifications Part No. (3) (4) (5) 0.3 IMT4

IMT4

Contextual Info: IMT4 Transistors General purpose dual transistors IMT4 0.3Min. 1.1 0.8 SMT6 T4 T108 Marking Code Basic ordering unit (pieces) 0~0.1 Package 2.8 0.15 IMT4 0.95 0.95 1.9 2.9 (1) (2) 1.6 Package, marking, and Packaging specifications Part No. (3) (4) (5) 0.3

2SC1741AS

Contextual Info: 2SC1741AS Transistors Medium Power Transistor 50V,0.5A 2SC1741AS Features 1) High current.(IC=5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. Packaging specifications and hFE Type 2SC1741AS Package hFE SPT QR Marking - Code

Contextual Info: IMX8FRA IMX8 Transistors AEC-Q101 Qualified General purpose dual transistors IMX8 IMX8FRA SMT6 X8 T108 (1) (2) 3000 0.8 0.3Min. ROHM : SMT6 EIAJ : SC-74 1.1 2.8 0~0.1 Code Basic ordering unit (pieces) 1.6 0.15 Marking (3) IMX8 IMX8FRA (4) Part No. Package

Contextual Info: IMX8 Transistors General purpose dual transistors IMX8 IMX8 SMT6 X8 (1) (2) (3) (4) Part No. Package 1.6 3000 0.8 0.3Min. 0~0.1 T108 1.1 2.8 0.15 Marking Code Basic ordering unit (pieces) (5) Package, marking, and packaging specifications 0.95 0.95 1.9 2.9

Contextual Info: IMX8 Transistors General purpose dual transistors IMX8 zFeatures 1) Two 2SC3906K chips in an SMT package. 2) High breakdown voltage. IMX8 SMT6 X8 T108 (1) (2) 1.6 0.8 0.3Min. 0~0.1 3000 1.1 2.8 0.15 Code Basic ordering unit (pieces) (3) (4) Part No. Package

2SC3906K

Abstract: T108 imx8
Contextual Info: IMX8 Transistors General purpose dual transistors IMX8 zFeatures 1) Two 2SC3906K chips in an SMT package. 2) High breakdown voltage. IMX8 SMT6 X8 (1) (2) (3) (4) Part No. Package 1.6 3000 0.8 0.3Min. 0~0.1 T108 1.1 2.8 0.15 Marking Code Basic ordering unit (pieces)

Contextual Info: IMX8 Transistors General purpose dual transistors IMX8 Power dissipation Junction temperature Storage temperature Pc Tj Tstg 300(TOTAL) 150 −55~+150 mW °C ∗ ∗ 0.3Min. °C IMX8 SMT6 X4 Marking Code Basic ordering unit (pieces) T108 3000 !Equivalent circuit

Contextual Info: Data Sheet Medium Power Transistor 50V,0.5A 2SD1949 / 2SD1484K Features 1) High current.(IC=0.5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. Dimensions (Unit : mm) UMT3 (SC-70) <SOT-323> (1) Emitter (2) Bace (3) Collector

Contextual Info: Data Sheet Medium Power Transistor 50V,0.5A 2SD1949 / 2SD1484K Features 1) High current.(IC=0.5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. Dimensions (Unit : mm) UMT3 (SC-70) <SOT-323> (1) Emitter (2) Bace (3) Collector

UMT6 SC-88

Abstract: SOT-363 marking ROHM 23marking Transistor code iz sot363
Contextual Info: Data Sheet POWER SUPPLY MONITOR DEVICES EML22/UML23N Dimensions Unit : mm Features 1) Packaging Zener diode and small-signal amplifier transistor EMT6 2) Using outside connection able to use Power supply monitor device 3) When use Power supply monitor device,

2SD1949

Contextual Info: Data Sheet AEC-Q101 Qualified Medium Power Transistor 50V,0.5A 2SD1949FRA / 2SD1484KFRA 2SD1949 / 2SD1484K Features 1) High current.(IC=0.5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. Dimensions (Unit : mm) UMT3 (SC-70)

Contextual Info: Chroma amplifier transistor 300V, 0.1A 2SC4061K Dimensions (Unit : mm) (2) 0.95 0.95 1.9 2.9 (3) 0.4 (1) Features 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.6 Symbol

Contextual Info: Chroma amplifier transistor 300V, 0.1A 2SC4061K Dimensions (Unit : mm) (2) 0.95 0.95 1.9 2.9 (3) 0.4 (1) Features 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.6 Symbol

Contextual Info: UMC1N / FMC1A Transistors Power management dual digital transistors UMC1N / FMC1A (3) R1 (4) (5) R1 0.1Min. ROHM : UMT5 EIAJ : SC-88A 1.3 Each lead has same dimensions R1 C1 C1 Code TR T148 Basic ordering unit (pieces) 3000 3000 2.9 UMT5 Marking 1.1 (4)

2SD1980

Contextual Info: Power Transistor 100V, 2A 2SD1980 Dimensions (Unit : mm) Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1316. 2SD1980 6.5 5.1 2.3 0.75 0.65

Contextual Info: Chroma amplifier transistor 300V, 0.1A 2SC4061K Dimensions (Unit : mm) (2) 0.95 0.95 1.9 2.9 (3) 0.4 (1) Features 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.6 Limits

2SC3415S

Abstract: 2SC4015 2SC4061K SC-72 T146 2SC4061
Contextual Info: Chroma amplifier transistor 300V, 0.1A 2SC4061K / 2SC3415S / 2SC4015 Dimensions (Unit : mm) (2) (3) 0.4 (1) 2SC4061K 0.95 0.95 1.9 2.9 Features 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit.

Contextual Info: Power Transistor 100V, 2A 2SD1980 Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1316. Dimensions (Unit : mm) 2SD1980 6.5 5.1 2.3 0.75 0.65

Contextual Info: Power Transistor 100V, 2A 2SD1980 / 2SD1867 zDimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1316. 2SD1980 6.5 5.1 2.3 2.5

2SB1443

Contextual Info: Power Transistor −50V, −2A 2SB1443 Dimensions (Unit : mm) Features 1) Low saturation voltage. VCE (sat) = −0.35V (Max.) at IC / IB = −1A / 50mA. 2) Excellent DC current gain characteristics. ATV Absolute maximum ratings (Ta=25C) Parameter

Contextual Info: 2SD2114K Datasheet NPN 500mA 20V Muting Transistors lOutline Parameter Value VCEO IC 20V 500mA SMT3 Collector Base Emitter 2SD2114K SOT-346 SC-59 lFeatures 1) High DC current gain. hFE =2700 (Max.) 2) High emitter-base voltage. VEBO is Min. 12V 3) Low VCE(sat)