ROGERS RO4350B MICROSTRIP Search Results

Rogers RO4350B

Abstract: RO4350B ROGERS GRM155R71E103KA01 25C2625 GRM1555C1H181JZ01
Contextual Info: Document Number: MML09212H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed

Contextual Info: Document Number: MML09212H Rev. 0, 10/2012 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed

RO4403

Abstract: Rogers RO4003 rt/duroid 5880 RO4450F rogers 5880 RO3006 RO4350B rogers laminate materials RO4450B RO3210
Contextual Info: Ordering Information: Standard Thickness, Tolerance and Panel Size Rogers’ high frequency laminates can be purchased by contacting a Rogers Customer Service Representative at 480 961-1382 or one of our international offices listed below. To ensure that you receive the material for your application, please include order information for each of the

RO4350B

Abstract: Rogers RO4350B microstrip RC0402FR-07-910RL YAGEO CHIP Capacitors MARKING GRM1555C1H221JZ01 ERJ2GE0R00X marking us capacitor pf l1 GRM1555C1H560JZ01 RC0402JR yageo GRM1555C1H181JZ01
Contextual Info: Freescale Semiconductor Technical Data Document Number: MML09212H Rev. 0, 10/2012 Enhancement Mode pHEMT Technology E-pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed

GJM1555C1H180GB01

Abstract: GRM1555C1H180JA01 C11 inductor RC0402FR-07-1K2RL RO4350B Rogers RO4350B microstrip phemt .s2p 25c2625
Contextual Info: Document Number: MML20242H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed

MG271H

Abstract: marking s22 GRM1555C1H1R0BA01 mmic C5 sot 86 GRM1555C1H1R2BA01 GRM1555C1H1R8BA01
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG20271H9 Rev. 0, 12/2011 Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low

Contextual Info: Document Number: MMG20271H9 Rev. 0, 12/2011 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low

MML20242H

Abstract: RO4350B Rogers RO4350B microstrip
Contextual Info: Freescale Semiconductor Technical Data Document Number: MML20242H Rev. 0, 10/2012 Enhancement Mode pHEMT Technology E-pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed

Contextual Info: Document Number: MML20242H Rev. 0, 10/2012 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed

Rogers RO4350B

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMZ25333B Rev. 1, 8/2014 2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT The MMZ25333B is a versatile 3-stage power amplifier targeted at driver and pre-driver applications for macro and micro base stations and final-stage

MTL ICC 317

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMZ25333B Rev. 0, 6/2014 2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT The MMZ25333B is a versatile 3-stage power amplifier targeted at driver and pre-driver applications for macro and micro base stations and final-stage

RO4350B

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 4, 8/2013 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

ATC100A101JP150

Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

MGA-61563

Abstract: Rogers 4350B RO4350B microstripline Rogers RO4350B microstrip 4350B
Contextual Info: MGA-61563 High Performance GaAs MMIC Amplifier Application Note 5012 Application Information The MGA-61563 is a high performance GaAs MMIC amplifier fabricated with Avago Technologies’ EpHEMT process and is targeted for commercial wireless application from 100 MHz to 6 GHz. The MGA-61563

Contextual Info: QTVAXX0NXXXSMTF DATA SHEET REV 07/28/2010 FEATURES APPLICATIONS • 36 – 50 GHz • Surface Mount for Pick and Place Assembly • 1206 Small Footprint • RoHS Compliant Versions • Available on Tape & Reel • Same Footprint, Fixed Versions Available • Point to Point Radios

MGA-61563

Abstract: RO4350B 4350B Rogers RO4350B microstrip
Contextual Info: Agilent MGA-61563 High Performance GaAs MMIC Amplifier Application Note 5012 Application Information The MGA-61563 is a high performance GaAs MMIC amplifier fabricated with Agilent’s E-pHEMT process and is targeted for commercial wireless application from 100

MGA-62563

Abstract: microstripline FR4 RO4350B 4350B 62563 62563 amplifier MGA-6x563 Rogers 4350B LL1608-FS47NJ LL1608-FS4N7S
Contextual Info: MGA-62563 High Performance GaAs MMIC Amplifier Application Note 5011 Application Information The MGA-62563 is a high performance GaAs MMIC amplifier fabricated with Avago Technologies E-pHEMT process and is targeted for commercial wireless application from 100 MHz to 3 GHz. The MGA-62563

Rogers RO4350B microstrip

Contextual Info: GX03 Ultra Broadband Capacitor ADVANTAGES APPLICATIONS • Ultra Broadband performance • Ultra Low Insertion Loss • Semi Conductor Data Communications Customers • X7R Characteristics • Receiver Optical Sub-Assemblies • Excellent Return Loss • Transimpedance Amplifier

SMS7621-060

Abstract: rat-race mixer Rogers 4350B PIN diode SPICE model skyworks 4350B paras
Contextual Info: DATA SHEET SMS7621-060: Surface Mount, 0201 Low-Barrier Silicon Schottky Diode Applications • Sensitive detector circuits • Sampling circuits • Mixer circuits Features • Low barrier height • Suitable for use above 26 GHz • Low parasitic impedance: CP < 0.05 pF, LS < 0.2 nH

Contextual Info: Freescale Semiconductor Technical Data Document Number: MW7IC2750N Rev. 4, 10/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2750N wideband integrated circuit is designed with on-chip matching that makes it usable from 2300 - 2700 MHz. This multi - stage

PIN diode SPICE model skyworks

Abstract: rat-race mixer CLASS diode rf DETECTOR
Contextual Info: DATA SHEET SMS7621-060: Surface Mount, 0201 Low-Barrier Silicon Schottky Diode Applications • Sensitive detector circuits • Sampling circuits • Mixer circuits Features • Low barrier height • Suitable for use above 26 GHz • Low parasitic impedance: CP < 0.05 pF, LS < 0.2 nH

MRFE6VP8600H

Abstract: MRFE6VP UT-141C-25 C3225X7R2A225KT UT-141C CRCW120610R0JNEA mrfe6vp8600hs C19C40 ATC200B ATC20
Contextual Info: Document Number: MRFE6VP8600H Rev. 0, 9/2011 Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices

IRL 1530

Abstract: MW7IC2750NBR1 AN1977 AN1987 JESD22-A114 MW7IC2750GNR1 MW7IC2750NR1
Contextual Info: Document Number: MW7IC2750N Rev. 2, 2/2010 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2750N wideband integrated circuit is designed with on- chip matching that makes it usable from 2300- 2700 MHz. This multi- stage

Contextual Info: Freescale Semiconductor Technical Data Document Number: MW7IC2750N Rev. 3, 3/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2750N wideband integrated circuit is designed with on-chip matching that makes it usable from 2300 - 2700 MHz. This multi - stage