RN2327A Search Results

RN1321A

Abstract: RN1327A RN2321A RN2322A RN2323A RN2324A RN2325A RN2326A RN2327A 2327A
Contextual Info: RN2321A~RN2327A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2321A,RN2322A,RN2323A,RN2324A RN2325A,RN2326A,RN2327A Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm z High current driving is possible.

Contextual Info: RN2321A~RN2327A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2321A,RN2322A,RN2323A,RN2324A RN2325A,RN2326A,RN2327A Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm z High current driving is possible.

IB501

Abstract: RN1321A RN1327A RN2321A RN2322A RN2323A RN2324A RN2325A RN2326A RN2327A
Contextual Info: RN2321A～RN2327A 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵 RN2321A,RN2322A,RN2323A,RN2324A RN2325A,RN2326A,RN2327A ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用

2327A

Abstract: RN1321A RN1327A RN2321A RN2322A RN2323A RN2324A RN2325A RN2326A RN2327A
Contextual Info: RN2321A~RN2327A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2321A,RN2322A,RN2323A,RN2324A RN2325A,RN2326A,RN2327A Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm High current driving is possible.

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

RN1322A

Abstract: RN1323A RN1324A RN1325A RN1326A RN1327A RN2321A RN2324A RN2327A RN1321A
Contextual Info: RN1321A~RN1327A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1321A,RN1322A,RN1323A,RN2324A RN1325A,RN1326A,RN1327A Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm High current driving is possible.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

toshiba YK smd marking

Abstract: bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV
Contextual Info: 抵抗内蔵型トランジスタ BRT SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

RN1324A

Abstract: RN1321A RN1322A RN1323A RN1325A RN1326A RN1327A RN2321A RN2327A
Contextual Info: RN1321A～RN1327A 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1321A,RN1322A,RN1323A,RN1324A RN1325A,RN1326A,RN1327A ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用

DF2S3.6SC

Abstract: TC7SZ34FU FSV 052 TC7SZ34F TC7SZ17FU 1SS421 TC7SZ02F TC7SZ08FU 1SS417 TC7SZ00AFS
Contextual Info: 【正誤表】 下記内容に誤記載がありましたので正誤表を添付させていただきます。 •資料名: 汎用小信号面実装対応素子 （トランジスタ、 ダイオード、 セルパック） ■資料番号： BCJ0052E

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

RN1325A

Abstract: RN1321A RN1322A RN1323A RN1324A RN1326A RN1327A RN2321A RN2327A
Contextual Info: RN1321A~RN1327A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1321A,RN1322A,RN1323A,RN1324A RN1325A,RN1326A,RN1327A Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z High current driving is possible.

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

RN1107F

Abstract: RN2327A RN49A5
Contextual Info: RN49A5 東芝トランジスタ シリコンNPN・PNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN49A5 単位: mm ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 z ウルトラスーパーミニ (6端子) パッケージに 2 素子を内蔵しています。

RN1321A

Abstract: TA48S018F TA48S025F TA48S02F TA48S033F TA48S03F TA48S05F TA76432 TA76432FT TPD1038F
Contextual Info: e y eeeyyyeee eeye 東芝半導体情報誌アイ 2002年3月号 ISSCCで最先端の半導体回路技術を発表 2/4-7米国・サンフランシスコで開催されたISSCC 国際固体回路会議 において、東芝セ ミコンダクター社は、最先端の半導体集積回路技術4件の論文発表を行いました。

RN1107F

Abstract: RN2327A RN49A5
Contextual Info: RN49A5 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) RN49A5 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Unit: mm Two devices are incorporated into an Ultra-Super-Mini (6-pin) package.

TPCA*8030

Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S

RN1321A

Abstract: RN1322A RN1323A RN1324A RN1325A RN1326A RN1327A RN2321A RN2327A
Contextual Info: RN1321A~RN1327A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1321A,RN1322A,RN1323A,RN1324A RN1325A,RN1326A,RN1327A Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z High current driving is possible.

Contextual Info: RN1321A~RN1327A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1321A,RN1322A,RN1323A,RN1324A RN1325A,RN1326A,RN1327A Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm High current driving is possible.

Contextual Info: RN49A5 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) RN49A5 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Unit: mm Two devices are incorporated into an Ultra-Super-Mini (6-pin) package.

RN1107F

Abstract: RN2327A RN49A5
Contextual Info: RN49A5 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process Silicon PNP Epitaxial Type (PCT Process) RN49A5 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (6-pin) package.

TC7SZ08FU

Abstract: lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent
Contextual Info: General-Purpose Small-Signal Surface-Mount Devices PRODUCT GUIDE CONTENTS 1. Package Information 3 to 6 2. Small Signal Transistors and Diodes 2.1 New Products 2.2 Small-Signal Transistors 2.3 Bias Resistor Transistora BRTs 6.1 Single Output type 6.2 Dual Output type