RN20 Search Results

RN1001

Abstract: RN1006 RN2001 RN2002 RN2003 RN2004 RN2005 RN2006
Contextual Info: RN2001~RN2006 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2001,RN2002,RN2003 RN2004,RN2005,RN2006 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors z Simplify circuit design

RN1010

Abstract: RN2001 RN2010 RN2011
Contextual Info: RN2010,RN2011 シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) 東芝トランジスタ RN2010,RN2011 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm

RN1010

Abstract: RN1011 RN2010 RN2011
Contextual Info: RN2010,RN2011 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2010,RN2011 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

RN2007

Abstract: RN2009 RN1007 RN1009 RN2008
Contextual Info: RN2007~RN2009 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2007,RN2008,RN2009 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process

Contextual Info: TOSHIBA RN2001-RN2006 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2001, RN2002, RN2003 RN2004, RN2005, RN2006 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm . 5.1 MAX. • With Built-in Bias Resistors

Contextual Info: T O S H IB A RN2001 ~RN2006 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2001, RN2002, RN2003 RN2004, RN2005, RN2006 U nit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS 5.1 M A X . • W ith Built-in Bias Resistors

RN1001

Abstract: RN1006 RN2001 RN2002 RN2003 RN2004 RN2005 RN2006
Contextual Info: RN2001~RN2006 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2001,RN2002,RN2003 RN2004,RN2005,RN2006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design

Contextual Info: RN2010,RN2011 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2010,RN2011 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process

RN1010

Abstract: RN1011 RN2010 RN2011
Contextual Info: RN2010,RN2011 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2010,RN2011 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process

RN2004

Abstract: RN1001 RN1006 RN2001 RN2002 RN2003 RN2005 RN2006
Contextual Info: RN2001~RN2006 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2001,RN2002,RN2003 RN2004,RN2005,RN2006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design

RN1001

Contextual Info: RN1001,1002,1003 RN1004,1005,1006 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm AND DRIVER CIRCUIT APPLICATIONS. FEATURES: . With Built-in Bias Resistors . Simplify Circuit Design . Reduce a Quantity of Parts and Manufacturing Process . Complementary to RN2001~2006

B948A

Abstract: 2SA1284 2SA1757 2SA1636 2SA1444 2SA1462 2sa1307 2SA1637 2SB793 nec 1441
Contextual Info: m s T y p e No. a s Manuf. H i# SANYO 1423 / Z. * 2SA 1424 / M 2SA1669 2 SA 1425 ^ 2SA B H T O SHIBA NEC RN2002 AN 1 A 4 M B ÎL HITACHI U ± il FU J ITSU & T MATSUSHITA h m MITSUBISHI □ — A ROHM DTA114ES UN41Í1 2SA1245 * 2 2SA1768 2SB1473 2SA1284 2SB1 1 3 0 M

RN1007

Abstract: RN1009 RN2007 RN2008 RN2009
Contextual Info: RN2007~RN2009 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2007,RN2008,RN2009 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: TOSHIBA RN2010,RN2011 T O SH IB A TRANSISTO R SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2010, RN2011 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIO NS . 5.1 M A X . • • • • With Built-in Bias Resistors Simplify Circuit Design

rn20

Abstract: vero PK100 LA-BGA-RM7000-S-B-01 RM7000
Contextual Info: Page 1 of 2 25.4 [1.000"] 46.23 [1.820"] Top View 44.07 [1.735"] 82.17 [3.235"] RN20 38.1 [1.500"] 1 3.56 [0.140"] 3.56 [0.140"] 71.63 [2.820"] 1 Substrate: 1.59mm ±0.18mm [0.0625" ±0.007"] FR4/G10 or equivalent high temp material. 17µm [1/2 oz.] Cu clad. SnPb plating.

Contextual Info: RN1007,1008,1009 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm AND DRIVER CIRCUIT APPLICATIONS. FEATURES : . With Built-in Bias Resistors . Simplify Circuit Design . Reduce a Quantity of Parts and Manufacturing Process . Complementary to RN2007-2009

K1047

Abstract: RN1007 RN2007 RN2008 RN2009
Contextual Info: RN2007～RN2009 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2007,RN2008,RN2009 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用

RN1010

Abstract: RN1011 RN2010 RN2011
Contextual Info: RN2010,RN2011 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2010,RN2011 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process

Contextual Info: TO SHIBA RN2007-RN2009 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2007, RN2008, RN2009 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 5.1 M AX. • • • • With Built-in Bias Resistors Simplify Circuit Design

RN1007

Abstract: RN1009 RN2007 RN2008 RN2009
Contextual Info: RN2007~RN2009 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2007,RN2008,RN2009 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

RN2003

Abstract: RN1001 RN2001 RN2002 RN2004 RN2005 RN2006
Contextual Info: RN2001～RN2006 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2001,RN2002,RN2003 RN2004,RN2005,RN2006 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用

RN1001

Abstract: RN1006 RN2001 RN2002 RN2003 RN2004 RN2005 RN2006
Contextual Info: RN2001~RN2006 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2001,RN2002,RN2003 RN2004,RN2005,RN2006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design

RN1010

Abstract: RN1011 RN2010 RN2011
Contextual Info: RN2010,RN2011 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2010,RN2011 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

2003Z

Contextual Info: RN2001,2002,2003 RN2004,2005,2006 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm AND DRIVER CIRCUIT APPLICATIONS. &1MAX. FEATURES : . With Built-in Bias Resistors 14 5 CX5 5 MAX. Q4 8 . Simplify Circuit Design . Reduce a Quantity of Parts and Manufacturing Process