RN1011 Search Results

3rn1010

Abstract: RN1010 RN1011 RN2010 RN2011
Contextual Info: RN1010, RN1011 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1010,RN1011 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: RN1010,RN1011 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1010, RN1011 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 5.1 M AX. • • • • With Built-in Bias Resistors Simplify Circuit Design

Contextual Info: T O S H IB A RN1010,RN1011 T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1010, RN1011 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIO NS . 5.1 M A X . • • • • With Built-in Bias Resistors

RN1010

Abstract: RN1011 RN2010 RN2011
Contextual Info: RN1010,RN1011 シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) 東芝トランジスタ RN1010,RN1011 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm

RN1010

Abstract: RN1011 RN2010 RN2011
Contextual Info: RN1010, RN1011 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1010,RN1011 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: RN1010, RN1011 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1010,RN1011 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process

RN1010

Abstract: RN1011 RN2010 RN2011
Contextual Info: RN1010, RN1011 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1010,RN1011 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process

RN1010

Abstract: RN1011 RN2010 RN2011
Contextual Info: RN1010, RN1011 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1010,RN1011 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process

ON285

Contextual Info: RN2010,2011 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm AND DRIVER CIRCUIT APPLICATIONS. 51MAX. FEATURES : . With Built-in Bias Resistors . Simplify Circuit Design . Reduce a Quantity of Parts and Manufacturing Process . Complementary to RN1010, RN1011

RN1010

Abstract: RN1011 RN2010 RN2011
Contextual Info: RN1010, RN1011 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1010,RN1011 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

RN1010

Abstract: RN1011 RN2010 RN2011
Contextual Info: RN2010,RN2011 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2010,RN2011 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

MA2J11100

Abstract: FBJ3216HS800 8C547 MA2J11100L si4814 LAD2 12V P11A13 quanta foxconn quanta computer
Contextual Info: 5 4 3 2 1 Block Diagram 2004/1/28 DDR DIMM 333/400MHZ AMD Processor K8 D DTR/Transportable DDR DIMM PAGE 04. PAGE 02.03. Vcore (1.5V):52.9A VLDT :500mA VCC2.5V :0.15A VCC2.5V_DUAL:2.2A VTT1.25V :125mA D 12VOUT 5VPCU 3V_591 DC - DC PAGE 16. 2.5VSUS DDR_VTT

Contextual Info: RN2010,RN2011 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2010,RN2011 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

toshiba YK smd marking

Abstract: bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV
Contextual Info: 抵抗内蔵型トランジスタ BRT SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

RN1010

Abstract: RN1011 RN2010 RN2011
Contextual Info: RN2010,RN2011 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2010,RN2011 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process

RN2226

Abstract: 2sa1015 sot-23 rn4601 diode 2sa1015
Contextual Info: B ia s R e s ì s t o ! B u ilt-in T ra n s is to r B R T General Use Type F6 Upper side: Similar to 2SC1815(NPN) Middle side: Similar to 2SC1815 + 2SA1015{NPN+PNP) Lower side: Similar to 2SA1015(PNP) 50 100 Similar TR V c e o (V ) Rating lcMAX(mA) Package

RN1417

Abstract: rn4601
Contextual Info: [1 ] Alphanum eric Product List [ 1 ] Alphanum eric Product List Device Page Device Page Device Page RN1001 75 RN1206 113 RN1318 152 RN1002 75 RN1207 118 RN1401 159 RN1003 75 RN1208 118 RN1402 159 RN1004 75 RN1209 118 RN1403 159 RN1005 75 RN1210 122 RN1404

rr1206

Abstract: EN1602 RN10U RN1509 RN1510 RN1511 RN1601 RN1603 RN1604 RN1605
Contextual Info: - 328 - mfctìS m % tt RN1509 Pc* VcBO V m h (Ta=25‘ C,*EPIÍTc=25‘ C) , £ (V) (A) (W) (min) (max) SW/INV/D 50 50 0.1 0.3 0.1 50 120 700 SW/INV/D 50 50 0.1 0.3 0.1 50 120 700 SW/INV/D 50 50 0.1 0.3 0.1 50 30 SW/INV/D 50 50 0.1 0.3 0.1 50 SW/INV/D 50

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

Contextual Info: TOSHIBA RN2010,RN2011 T O SH IB A TRANSISTO R SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2010, RN2011 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIO NS . 5.1 M A X . • • • • With Built-in Bias Resistors Simplify Circuit Design

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs