RN1967 Search Results

Contextual Info: RN1967CT~RN1969CT 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1967CT,RN1968CT,RN1969CT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用

RN1967FE

Abstract: RN1968FE RN1969FE RN2967FE RN2969FE
Contextual Info: RN1967FE~RN1969FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1967FE,RN1968FE,RN1969FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6 pin)

RN1967

Abstract: RN1968 RN1969 RN2967 RN2969
Contextual Info: RN1967～RN1969 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1967,RN1968,RN1969 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用

Contextual Info: RN1967~RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1967,RN1968,RN1969 Unit:mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in US6 (ultra super mini type 6 leads) l With built-in bias resistors

K 192 A transistor

Abstract: RN1967FE RN1968FE RN1969FE RN2967FE RN2969FE
Contextual Info: RN1967FE~RN1969FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1967FE, RN1968FE, RN1969FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin)

Contextual Info: RN1967FE~RN1969FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1967FE,RN1968FE,RN1969FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6 pin)

Contextual Info: RN1967~RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1967,RN1968,RN1969 Unit:mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z Including two devices in US6 (ultra super mini type 6 leads) z With built-in bias resistors

Contextual Info: RN1967FS~RN1969FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1967FS,RN1968FS,RN1969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Two devices are incorporated into a fine pitch Small Mold (6 pin)

Contextual Info: RN1967FS~RN1969FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1967FS,RN1968FS,RN1969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Two devices are incorporated into a fine pitch Small Mold (6 pin)

RN1967

Abstract: RN1968 RN1969 RN2967 RN2969
Contextual Info: RN1967～RN1969 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1967,RN1968,RN1969 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用

Contextual Info: SILIC O N N PN EP IT A X IA L T Y P E RN1967RN1969 Unit in mm SW ITC H IN G , INV ERTER CIRCUIT, IN TERFAC E CIRCUIT 2 1 ± 0.1 A N D D R IV E R C IRCU IT A PPLICA TIO N S. 1 .2 5 * 0 .1 Including Two Devices in US6 Ultra Super Mini Type 6 leads With Built-in Bias Resistors

Contextual Info: TOSHIBA RN1967-RN1969 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1967, RN1968, RN 1969 U nit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT . ± 2 1 0.1 A N D DRIVER CIRCUIT APPLICATIONS. 1.25±0.1 1 Including Two Devices in US6 (Ultra Super Mini Type 6 leads)

RN1967

Abstract: RN1968 RN1969 RN2967 RN2969
Contextual Info: RN1967~RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1967,RN1968,RN1969 Unit:mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors

Contextual Info: RN1967~RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1967, RN1968, RN1969 Unit:mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including two devices in US6 (ultra super mini type 6 leads)

kn266

Abstract: 1969
Contextual Info: R N 1 9 6 7 , 1 9 6 8 ,1 9 6 9 RN1967 Unit in mm 2.1±0.1 SW ITCH IN G , INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCU IT APPLICATIONS. • • • • • 1.25*0.1 -16 to Including Two Devices in US6 (Ultra Super Mini Type 6 leads) With Built-in Bias Resistors

RN1968FE

Abstract: RN1969FE RN2967FE RN2969FE RN1967FE
Contextual Info: RN1967FE~RN1969FE 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1967FE, RN1968FE, RN1969FE ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用

Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: RN1967CT Category: Transistors /Bipolar Small-Signal Transistors/Bias Resistor Built-in Transistors Dual

RN2969

Abstract: RN1967 RN1968 RN1969 RN2967
Contextual Info: RN1967~RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1967,RN1968,RN1969 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors

Contextual Info: RN1967~RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1967,RN1968,RN1969 Unit:mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads)

RN1967FE

Abstract: RN1968FE RN1969FE RN2967FE RN2969FE
Contextual Info: RN1967FE~RN1969FE 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1967FE, RN1968FE, RN1969FE ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用

Contextual Info: RN1967~RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1967, RN1968, RN1969 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Including two devices in US6 (ultra-super-mini-type with six (6) leads)

RN1967FS

Abstract: RN1969FS RN2967FS RN2968FS RN2969FS
Contextual Info: RN2967FS~RN2969FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2967FS,RN2968FS,RN2969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Complementary to RN1967FS~RN1969FS

RN1967

Abstract: RN1968 RN1969 RN2967 RN2969 1969
Contextual Info: RN1967~RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1967,RN1968,RN1969 Unit:mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in US6 (ultra super mini type 6 leads) l With built-in bias resistors

C-2-BL-C

Contextual Info: TOSHIBA RN1967-RN1969 TO SHIBA TRANSISTOR RN1QR7 • « ■ v ■ Mr m g SILICON NPN EPITAXIAL TYPE PCT PROCESS RM1QK8 u « ■ m m mm RM1QRQ g ■ « ■ v ■ «r U nit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT 2 .1 ± 0.1 A N D DRIVER CIRCUIT APPLICATIONS.