RN1967RN1969 Search Results

Contextual Info: SILIC O N N PN EP IT A X IA L T Y P E RN1967RN1969 Unit in mm SW ITC H IN G , INV ERTER CIRCUIT, IN TERFAC E CIRCUIT 2 1 ± 0.1 A N D D R IV E R C IRCU IT A PPLICA TIO N S. 1 .2 5 * 0 .1 Including Two Devices in US6 Ultra Super Mini Type 6 leads With Built-in Bias Resistors

Contextual Info: TOSHIBA RN1967-RN1969 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1967, RN1968, RN 1969 U nit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT . ± 2 1 0.1 A N D DRIVER CIRCUIT APPLICATIONS. 1.25±0.1 1 Including Two Devices in US6 (Ultra Super Mini Type 6 leads)

C-2-BL-C

Contextual Info: TOSHIBA RN1967-RN1969 TO SHIBA TRANSISTOR RN1QR7 • « ■ v ■ Mr m g SILICON NPN EPITAXIAL TYPE PCT PROCESS RM1QK8 u « ■ m m mm RM1QRQ g ■ « ■ v ■ «r U nit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT 2 .1 ± 0.1 A N D DRIVER CIRCUIT APPLICATIONS.

Contextual Info: TOSHIBA RN1967-RN1969 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1967, RN 1968, RN1969 U nit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT 2 .1 ± 0.1 A N D DRIVER CIRCUIT APPLICATIONS. 1.25±0.1 6 s Including Two Devices in US6 (U ltra Super Mini Type 6 leads)