RN1968 Search Results
RN1968 Datasheets (14)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| RN1968 | Toshiba | NPN Transistor | Original | 261.03KB | 6 | ||
| RN1968CT | Toshiba | RN1968 - TRANSISTOR 50 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1K1A, CST6, 6 PIN, BIP General Purpose Small Signal | Original | 320.46KB | 6 | ||
| RN1968FE | Toshiba | Original | 67.3KB | 3 | |||
| RN1968FE | Toshiba | RN1968 - TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, EXTREME SUPERMINI, ES6, 2-2N1A, 6 PIN, BIP General Purpose Small Signal | Original | 320.46KB | 6 | ||
| RN1968FE | Toshiba | Japanese - Transistors | Original | 511.38KB | 6 | ||
| RN1968FE | Toshiba | Transistors | Original | 350.37KB | 6 | ||
| RN1968FE(TE85L,F) | Toshiba | Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRAN DUAL NPN ES6 50V 100A | Original | 6 | |||
| RN1968FS | Toshiba | Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) | Original | 110.28KB | 6 | ||
| RN1968(TE85L) | Toshiba | RN1968 - TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1B, 6 PIN, BIP General Purpose Small Signal | Original | 320.46KB | 6 | ||
| RN1968TE85L | Toshiba | RN1968 - TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | Original | 320.46KB | 6 | ||
| RN1968(TE85L,F) | Toshiba | Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRAN DUAL NPN US6 50V 100A | Original | 6 | |||
| RN1968TE85N | Toshiba | RN1968 - TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | Original | 320.46KB | 6 | ||
| RN1968(TE85R) | Toshiba | RN1968 - TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1B, 6 PIN, BIP General Purpose Small Signal | Original | 320.46KB | 6 | ||
| RN1968TE85R | Toshiba | RN1968 - TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | Original | 320.46KB | 6 |
RN1968 Price and Stock
Toshiba America Electronic Components RN1968(TE85L,F)Digital Transistors US6 TRANSISTOR Pd 50mW F 1Mhz (LF) |
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RN1968(TE85L,F) |
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RN1968 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: RN1968CT Category: Transistors /Bipolar Small-Signal Transistors/Bias Resistor Built-in Transistors Dual |
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rn1968ctrn2968ct16-apr-09 | |
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Contextual Info: RN1967CT~RN1969CT 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1967CT,RN1968CT,RN1969CT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 |
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rn1967ctrn1969ctrn1968ctrn2967ct+1 | |
RN1967FE
Abstract: RN1968FE RN1969FE RN2967FE RN2969FE
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rn1967fern1969fern1968fern2967fe+1 | |
RN1967
Abstract: RN1968 RN1969 RN2967 RN2969
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rn1967rn1969rn1967rn1968rn1969+3 | |
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Contextual Info: RN1967~RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1967,RN1968,RN1969 Unit:mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in US6 (ultra super mini type 6 leads) l With built-in bias resistors |
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rn1967rn1969rn1968rn2967+1 | |
K 192 A transistor
Abstract: RN1967FE RN1968FE RN1969FE RN2967FE RN2969FE
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rn1967fern1969fern1968fern2967fe+2 | |
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Contextual Info: RN1967FE~RN1969FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1967FE,RN1968FE,RN1969FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6 pin) |
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rn1967fern1969fern1968fern2967fe+1 | |
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Contextual Info: RN1967~RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1967,RN1968,RN1969 Unit:mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z Including two devices in US6 (ultra super mini type 6 leads) z With built-in bias resistors |
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rn1967rn1969rn1968rn2967+1 | |
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Contextual Info: RN1967FS~RN1969FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1967FS,RN1968FS,RN1969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) |
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rn1967fsrn1969fsrn1968fsrn2967fs+2 | |
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Contextual Info: RN1967FS~RN1969FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1967FS,RN1968FS,RN1969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) |
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rn1967fsrn1969fsrn1968fsrn2967fs+1 | |
RN1967
Abstract: RN1968 RN1969 RN2967 RN2969
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rn1967rn1969rn1967rn1968rn1969+3 | |
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Contextual Info: TOSHIBA RN1967-RN1969 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1967, RN1968, RN 1969 U nit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT . ± 2 1 0.1 A N D DRIVER CIRCUIT APPLICATIONS. 1.25±0.1 1 Including Two Devices in US6 (Ultra Super Mini Type 6 leads) |
OCR Scan |
rn1967-rn1969rn1967rn1968rn1969+1 | |
RN1967
Abstract: RN1968 RN1969 RN2967 RN2969
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rn1967rn1969rn1968rn2967+1 | |
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Contextual Info: RN1967~RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1967, RN1968, RN1969 Unit:mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including two devices in US6 (ultra super mini type 6 leads) |
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rn1967rn1969rn1968rn2967+1 | |
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RN1968FE
Abstract: RN1969FE RN2967FE RN2969FE RN1967FE
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rn1967fern1969fern1968fern2967fe+1 | |
RN2969
Abstract: RN1967 RN1968 RN1969 RN2967
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rn1967rn1969rn1968rn2967+1 | |
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Contextual Info: RN1967~RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1967,RN1968,RN1969 Unit:mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) |
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rn1967rn1969rn1968rn2967+1 | |
RN1967FE
Abstract: RN1968FE RN1969FE RN2967FE RN2969FE
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rn1967fern1969fern1968fern2967fe+1 | |
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Contextual Info: RN1967~RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1967, RN1968, RN1969 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Including two devices in US6 (ultra-super-mini-type with six (6) leads) |
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rn1967rn1969rn1968rn2967+1 | |
RN1967
Abstract: RN1968 RN1969 RN2967 RN2969 1969
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rn1967rn1969rn1968rn2967+2 | |
RN1967
Abstract: RN1968 RN1969 RN2967 RN2969 b 1969
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rn1967rn1969rn1968rn2967+2 | |
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Contextual Info: RN1967CT~RN1969CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1967CT,RN1968CT,RN1969CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm |
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rn1967ctrn1969ctrn1968ctrn2967ct+1 | |
RN1967FS
Abstract: RN1968FS RN1969FS RN2967FS RN2969FS
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rn1967fsrn1969fsrn1968fsrn2967fs+1 | |
RN1967FE
Abstract: RN1968FE RN1969FE RN2967FE RN2969FE
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rn1967fern1969fern1968fern2967fe+1 | |