RN142 Search Results

Contextual Info: RN142ZS12A Diodes PIN Diode RN142ZS12A z Dimensions Unit : mm z Applications High frequency switching 㪇㪅㪏㫧㪇㪅㪇㪌 㪉㪅㪋㫧㪇㪅㪇㪌 z Features 1) Ultra small mold typë́HMD12ͅ 2) Low high-frequency forward resistance (rF) / low capacitance (CT).

Contextual Info: Data Sheet AEC-Q101 Qualified PIN diode RN142SFH Applications High frequency switching Land size figure Unit : mm Dimensions (Unit : mm) 0.12±0.05 0.8 0.6 0.8±0.05 1.6±0.1 1.2±0.05 1.7 Features 1) Ultra small mold type (EMD2) 2) High frequency resistance

RN142S

Contextual Info: RN142S Diodes PIN diode RN142S zApplication High frequency switching zExternal dimensions Unit : mm 0.8±0.05 zLand size figure (Unit : mm) 0.12±0.05 0.6 0.8 1.6±0.1 1.2±0.05 1.7 zFeatures 1) Ultra small mold type (EMD2) 2) High frequency resistance which is small and low capacity.

Contextual Info: T O S H IB A RN1421 ~RN1427 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1421, RN1422, RN1423, RN1424 RN1425, RN1426, RN1427 U nit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS + 0.5 2 .5 -0 .3 + 0.25

Contextual Info: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z High current type (IC (max) = 800mA) z With built-in bias resistors

RN142V

Contextual Info: REFERENCE 29-Sep-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RN142V No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current XTI

diode ct 2405

Contextual Info: RN142ZS12A Diodes PIN Diode RN142ZS12A z Dimensions Unit : mm z Applications High frequency switching 0.8±0.05 2.4±0.05 z Features 1) Ultra small mold type（HMD12） 2) Low high-frequency forward resistance (rF) / low capacitance (CT). 0.3±0.03 0～0.03

RN1423

Abstract: RN1427 RN1424 RN1421 RN1422 RN1425 RN1426 RN2401 RN2406
Contextual Info: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l High current type (IC (max) = 800mA) l With built-in bias resistors

marking qd sc59

Abstract: rn1425 RN1426
Contextual Info: SILICON NPN EPITAXIAL TYPE RN1421-RN1427 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT +0.5 2 . 5 - 0.3 AND DRIVER CIRCUIT APPLICATIONS. • High Current Type I^(MAX. =800mA) • With Built-in Baias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts Namufacturing Process

Contextual Info: RN142S Diodes PIN diode RN142S zApplication High frequency switching zExternal dimensions Unit : mm 0.8±0.05 zLand size figure (Unit : mm) 0.12±0.05 0.8 1.7 1.6±0.1 1.2±0.05 zFeatures 1) Ultra small mold type (EMD2) 2) High frequency resistance which is small and low capacity.

Zener diode x6

Abstract: MMD12 Rohm multi RN142ZS12A zener diode chip
Contextual Info: New Product News No.E7053 World’s Smallest Thinnest A Ultra-compact Multi Diode Package PIN Diodes RN142ZS8A 1608(0603 size/8 pin type)/RN142ZS12A (24 08(0903) size/12 pin type) RN142ZS12A HMD12 Package Sm allest, thinnest in r 2.4 x 0.8m m t= 0.3m m j

Contextual Info: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l High current type (IC (max) = 800mA) l With built-in bias resistors

Contextual Info: RN142GFH Diodes AEC-Q101 Qualified PIN diode RN142GFH z Land size figure Unit : mm z External dimensions (Unit : mm) zApplications High frequency switching 0.13±0.03 0.5 1.4±0.05 1.0±0.05 zFeatures 1) Ultra small mold type. (VMD2) 2) High frequency resistance which

Contextual Info: TOSHIBA RN1421-RN1427 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1421, RN1422, RN1423, RN1424 RN1425, RN1426, RN1427 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS Unit in mm + 0.5 High Current Type (Iq (MAX.) = 800mA)

Contextual Info: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm High current type (IC (max) = 800mA) With built-in bias resistors

Contextual Info: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm High current type (IC (max) = 800mA)

Contextual Info: Data Sheet PIN diode RN142S Applications High frequency switching Dimensions Unit : mm Land size figure (Unit : mm) Features 1) Ultra small mold type (EMD2) 2) High frequency resistance which is small and low capacity. Construction Silicon epitaxial planar

rf 840

Contextual Info: RN142G Diodes PIN diode RN142G z Land size figure Unit : mm z External dimensions (Unit : mm) zApplications High frequency switching 0.13±0.03 0.5 1.4±0.05 1.0±0.05 zFeatures 1) Ultra small mold type. (VMD2) 2) High frequency resistance which is small and low capacity.

RN142S

Contextual Info: RN142S Diodes PIN diode RN142S zApplication High frequency switching zExternal dimensions Units : mm 0.12±0.05 0.3±0.05 1.6±0.1 K 1.2±0.05 CATHODE MARK zFeatures 1) Ultra small mold type (EMD2) 2) High frequency resistance which is small and low capacity.

Contextual Info: RN142ZS8A Diodes PIN Diode RN142ZS8A z Land size figure Unit : mm z Dimensions (Unit : mm) z Applications High frequency switching 㪈㪅㪍㫧㪇㪅㪇㪌 㪇㪅㪊 㪇㪅㪏㫧㪇㪅㪇㪌 z Features 1) Ultra small mold typë́HMD8ͅ 2) Low high-frequency forward

transistor c 828 low level

Abstract: RN142G
Contextual Info: RN142G Diodes PIN diode RN142G z Land size figure Unit : mm z External dimensions (Unit : mm) zApplications High frequency switching 0.13±0.03 0.5 1.4±0.05 1.0±0.05 zFeatures 1) Ultra small mold type. (VMD2) 2) High frequency resistance which is small and low capacity.

RN1421

Abstract: RN1422 RN1423 RN1424 RN1425 RN1426 RN1427 RN2401 RN2406
Contextual Info: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z High current type (IC (max) = 800mA) z With built-in bias resistors

RN1425

Abstract: Transistor 1427 RN1421 RN1422 RN1423 RN1424 RN1426 RN1427 RN2401 RN2406
Contextual Info: RN1421~RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm High current type (IC (max) = 800mA) With built-in bias resistors

RN142G

Contextual Info: RN142G Diodes PIN diode RN142G zExternal dimensions Units : mm zFeatures 1) Ultra small mold type (VMD2) 2) High frequency resistance which is small and low capacity. 0.6±0.05 0.27±0.03 0.13±0.03 K 1.0±0.05 CATHODE MARK 1.4±0.05 zApplication High frequency switching