RM73B Search Results

RM73B2A-J

Abstract: RK73H2B-F RM73B2B-J RK73H2A-F RM73B1J-J 22k resistor 200 watt RK73H1J-F RM73B1J
Contextual Info: :< O à \ SURFACE MOUNT RESISTOR LAB KITS SPEER ELECTRONICS, IN C . TYPES RM73B2B-J 1206 Size, 1/4 watt, 5% RM73B2A-J 0805 Size, 1/8 watt, 5% RM73B1J-J 0603 Size, 1/10 watt, 5% VALUES PER KIT

MGA-633P8

Abstract: CM05CH330J50AH RM73B1ETTP100J mga-633p8-tr1g mga 633p8-blkg GRM1555C1H101JD01 MGA633P8
Contextual Info: MGA-633P8 Ultra Low Noise, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-633P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of

Contextual Info: MGA-633P8 Ultra Low Noise, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-633P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of

RM73B1J

Abstract: 104021
Contextual Info: KOA FLAT CHIP RESISTORS SPEER ELECTRONICS, INC. DESCRIPTION OF CHIP RESISTORS - Seven 7 Available Sizes - 0402, 0603, 0805 1206, 1210, 2010, 2512 - 1/16 Watt to 1 Watt Power Ratings - 0.1 Ohm to 22 Meg Ohm Resistance Range - Tight Tolerance and Low TCR Available

Contextual Info: KOA FLAT CHIP RESISTORS SPEER ELECTRONICS, INC. DESCRIPTION OF CHIP RESISTORS - Seven 7 Available Sizes - 0402, 0603, 0805 1206, 1210, 2010, 2512 - 1/16 Watt to 1 Watt Power Ratings - 0.1 Ohm to 22 Meg Ohm Resistance Range - Tight Tolerance and Low TCR Available

11x11mm

Abstract: cl21b103kbnc SAMSUNG SAMSUNG 0805 thick film resistor CL21B103KB 50V 10uF X7R keystone 1028 AN-1030 HIP6311 IP2001 TP10
Contextual Info: PD - 94089D iP2001 Synchronous Buck Multiphase Optimized BGA Power Block Integrated Power Semiconductors, Drivers & Passives Features: • • • • • 20A continuous output current with no derating up to TPCB = 90°C Very small 11mm x 11mm x 3mm profile

AGR09030GUM

Abstract: JESD22-C101A RF35
Contextual Info: Preliminary Data Sheet August 2004 AGR09030GUM 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

eeprom programmer schematic 24c08

Abstract: motorola TP230 eeprom programmer schematic 24c02 transistor C458 C458 datasheet GMC21X7R104K50NT philips c399 RM10F1000CT IC 24c08 transistor c331
Contextual Info: Preliminary ThunderSWITCH 8/3 Schematics Description and Schematics Reference Guide: SPWA023 Networking Business Unit Revision 0.2 April 1998 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or

Ferrite core 13.56 MHz RFID tag inductor antennas

Abstract: OMRON TIMER H2a RFID loop antenna 13.56MHz 3-pin D128 transistor RFID pcb antenna 13.56MHz TB031 CIRCUIT SCHEMATIC CAR ECU PIC16C63A-04/SP schematic diagram of active rfid tag RFID loop antenna 13.56MHz spiral
Contextual Info: microID 13.56 MHz RFID System Design Guide INCLUDES: • • • • • • • • Passive RFID Basics Application Note MCRF355/360 Data Sheet Microchip Development Kit Sample Format MCRF355/360 Factory Programming Support SQTPSM MCRF355/360 Applications Application Note

Contextual Info: K O FLAT CHIP RESISTORS a\ SPEER ELECTRONICS, INC. DESCRIPTION OF CHIP RESISTORS - Seven 7 Available Sizes - 0402, 0603, 0805 1206, 1210, 2010, 2512 - 1/16 W att to 1 W att Power Ratings - 0.1 Ohm to 22 Meg Ohm Resistance Range - Tight Tolerance and Low TCR Available

C1206C104KRAC7800

Abstract: 100b6r8 AGR09045E AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW
Contextual Info: AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

RM73B2B

Abstract: 465B AN1955 MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S19130H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110

Contextual Info: Freescale Semiconductor Technical Data MRF284 Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier

mrf5s21090

Contextual Info: MRF5S21090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

100B471JP200X

Abstract: 100B110JP500X T495X106K035AS4394 400S CDR33BX104AKWS MRF19045R3 MRF19045SR3 100B8R2CP500X
Contextual Info: MOTOROLA Order this document by MRF19045/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19045R3 MRF19045SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19100L/D SEMICONDUCTOR TECHNICAL DATA MRF5S19100LR3 and MRF5S19100LSR3 replaced by MRF5S19100HR3 and MRF5S19100HSR3. “H” suffix indicates lower thermal resistance package. The RF MOSFET Line

ATC100A101JP150

Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

TO272

Abstract: RM73B2BT A113 GRM42 MWIC930 MWIC930GR1 MWIC930R1 2XE3
Contextual Info: MOTOROLA Order this document by MWIC930/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest High Voltage 26 to

Contextual Info: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110

j340 motorola make

Contextual Info: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110

Contextual Info: MRF5S19090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 16, 5/2005 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier

ferroxcube for ferrite beads

Abstract: MRF282
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 14, 5/2005 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and