RKP201 Search Results

Contextual Info: RKP201KM Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1226-0200 Rev.2.00 Nov 22, 2005 Features • • • • Adopting the trench structure minimize terminal capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max) Low operation current.

PUSF0002ZB-A

Abstract: RKP201KK
Contextual Info: RKP201KK Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1224-0200 Rev.2.00 Sep 06, 2005 Features • • • • Adopting the trench structure minimize terminal capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max) Low operation current.

RKP201KN

Contextual Info: RKP201KN Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1311-0200 Rev.2.00 Jan 31, 2006 Features • • • • Adopting the trench structure minimize terminal capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max) Low operation current.

PUSF0002ZA-A

Abstract: RKP201KM
Contextual Info: RKP201KM Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1226-0100 Rev.1.00 Jun 10, 2005 Features • • • • Adopting the trench structure minimize terminal capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max) Low operation current.

RKP201KN

Contextual Info: RKP201KN Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1311-0200 Rev.2.00 Jan 31, 2006 Features • • • • Adopting the trench structure minimize terminal capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max) Low operation current.

RKP201KL

Contextual Info: RKP201KL Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1225-0200 Rev.2.00 Sep 06, 2005 Features • • • • Adopting the trench structure minimize terminal capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max) Low operation current.

PUSF0002ZA-A

Abstract: RKP201KM
Contextual Info: RKP201KM Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1226-0200 Rev.2.00 Nov 22, 2005 Features • • • • Adopting the trench structure minimize terminal capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max) Low operation current.

Contextual Info: RKP201KL Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1225-0200 Rev.2.00 Sep 06, 2005 Features • • • • Adopting the trench structure minimize terminal capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max) Low operation current.

Contextual Info: RKP201KK Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1224-0200 Rev.2.00 Sep 06, 2005 Features • • • • Adopting the trench structure minimize terminal capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max) Low operation current.

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

PUSF0012ZA-A

Abstract: RKP200KP RKP201KN RKP410KS
Contextual Info: RKP410KS Composite Pin Diode for Antenna Switching REJ03G1544-0200 Rev.2.00 Jun 08, 2007 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)

Contextual Info: RKP406KS Composite Pin Diode for Antenna Switching REJ03G1461-0100 Rev.1.00 Jul 10, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PUSF0012ZA-A

Abstract: RKP200KP RKP201KN RKP403KS
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

HVL142AM

Abstract: PUSF0012ZA-A RKP201KN RKP406KS mark L6
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

EIAJ-ED-4701

Abstract: EIAJED-4701 1SS106 EIAJ-ED-4131 RKP450KE EIAJ standards zener diode reliability fit 1s2076 smd diode ED 1SS270
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

Contextual Info: RKP403KS Composite Pin Diode for Antenna Switching REJ03G1347-0200 Rev.2.00 Jul 03, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)

Contextual Info: RKP407KS Composite Pin Diode for Antenna Switching REJ03G1462-0100 Rev.1.00 Jul 10, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)

PUSF0012ZA-A

Abstract: RKP200KP RKP201KN RKP410KS
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: RKP404KS Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G1348-0100 Rev.1.00 Apr 17, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)

Contextual Info: RKP403KS Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G1347-0100 Rev.1.00 Apr 17, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)