RK 626-101 E Search Results

MIL-T-55155

Abstract: ali 3329 ali m 3329 BA 5979 5740-14 SE181 SE191D01 57b9 MZ-157 EMC 8200 E
Contextual Info: Single - Turret Standoffs ADVANCED INTERCONNECTIONS' 5 Energy Way, P.O. Box 1342, West Warwick, Rl 02893 • Tel. 401-823-5200 • FAX 401-823-8723 •TWX 9102403454 EMC*Product "STS" Series Plating: 400p" Tin terminal, 200|i" Cadm ium Chrom ate base/eyelet

TRANSISTOR 132-gd

Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Contextual Info: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n

ic HM 392 - 110

Abstract: vitrohm 412 101 R15 N 470 KP
Contextual Info: Vorzugswerte nach DIN/IEC 63: E6 E 12 E 24 E6 E 12 1.0 1.0 1.0 1.1 1.2 1.3 1.5 1.6 1.8 2.0 2.2 2.4 2.7 3.0 3.3 3.3 1.2 1.5 1.5 1.8 2.2 2 .2 2.7 E 48 E 96 E 192 E 48 E 96 100 100 100 162 162 101 102 105 102 105 165 169 169 174 109 110 110 110 178 115 115 182

VSF203

Abstract: selen-gleichrichter OA625 VSF200 selengleichrichter Dioden SY 250 GY123 GY112 VEB Keramische Werke GC301
Contextual Info: d U 3 iu d |d n D g - J 3 i;d |q |D |_ | Dioden G erm anium dio den Type Durdilaßsponnung U f [Y ] Durchlaß­ strom If [mA] SperrSpannung Sperrstrom Ir [; xA] U r [V] max. zuläss. Sperr­ spannung URmax [V] max. zuläss. DurchlaßStrom Bau­ Verwendungszweck

TRANSISTOR noise figure measurements

Abstract: Hewlett-Packard application note 970 et1102 14CL 40 HFET-1101 HFET-1102 2N6680 D5880 application note Hewlett-Packard 970 line AMPLIFIER satellite
Contextual Info: NEW H E W L E T T P A C KARD 2N6680 HFET-1101 HFET-1102 MICROWAVE GaAS FETS GaAs FETs COMPONENTS Features LOW NOISE FIGURE 1.6 dB Typical at 4 GHz (2N6680) 1.7 dB Maximum at 4 GHz (HFET-1102) 1.5 dB Typical a HIGH GAIN 16 dB Typical at 4 GHz HIGH OUTPUT POWER

keramische Werke Hermsdorf

Abstract: Mischstufen VEB Keramische Werke OA741 OA645 OA625 hermsdorf OA665 neue halbleiterbauelemente Amateur
Contextual Info: HalbleiterBauelemente Dioden Germanium dioden Type Durchlaß­ spannung U a k IVI Durchlaß­ strom Sperr­ spannung lA K l m A l U k a |V| Sperrstrom IKA li'AI max. zuläss. Sperr­ spannung jEä max. zuass. Durchlaß­ strom UKAma* IVI ^AKmax !mAl Bau­

Halbleiterbauelemente DDR

Abstract: BEL 639 transistor Sowjetische Halbleiter-Bauelemente KBC111 k4213 Germanium Transistor katalog radio fernsehen elektronik elektronik DDR KT904 KT372
Contextual Info: K a ta lo g sowjetischer H albleiterbauelem ente Si« linden im K a t a lo g t e il : Der hiermit unseren Lesern vorgelegte Katalog sowjetischer Transistoren, Dioden und integrierter Schaltkreise ist das Resultat enger Zusammen­ arbeit zwischen dem VEB Elektronikhandel Berlin und der Redaktion der

la 4287

Abstract: LA 4288
Contextual Info: Wtipl WLtiM HERMETIC, NUMERIC AND HEXADECIMAL DISPLAYS FOR MILITARY APPLICATIONS HEW LETT PACKARD HIGH EFFICIENCY RED LOW P o w e r High B rightness YELLOW H igh P e rfo rm a n c e GREEN H D S P -0 78X /07 8X T X V /078 X T X V B H D S P -0 79X /07 9X T X V /079 X T X V B

Contextual Info: 19-1075; R e v 0; 6 /9 6 jv \ / \ y a jv \ 5 V /3 .3 V or A djustable, 100% Duty-Cycle, High-Efficiency; Step-Down DC-DC Controllers Features ♦ Low Dropout Voltage These step-dow n controllers drive an external P-channel MOSFET, allowing design flexibility for a pplications

hl 4929

Abstract: GK02 bk31 772 gk SEG357 gk03 4A3E gk71 Hitachi DSA002732 SEG340
Contextual Info: Preliminary HD66761 128 x 80-dot Graphics LCD Controller/Driver for 256 Colors Rev 0.5 July 4, 2000 Description The HD66761, color-graphics LCD controller and driver LSI, displays 128-by-80-dot graphics for 256 STN colors. It consists of upper and lower screens and drives maximum 128-by-160-dot STN color

bk31

Abstract: 7721
Contextual Info: To all our customers Information regarding change of names mentioned within this document, to Renesas Technology Corp. On April 1st 2003 the following semiconductor operations were transferred to Renesas Technology Corporation: operations covering microcomputer, logic,

Contextual Info: SSiSS/Resistors m m & a :p p PP f t • m m m & • * * * A • # 5 fp n0 • 2j m i 2|Ibhp • jjx z a s MCR x — E"> X lino i a t t - p & W £ r f f l * L T 1 /'-5 8!nnn T ' t o p MCR10 ttz, IK linO x —E > * 5 — $<7 jM 88 If'iL'W t X V£ 4 lino r a x ic g L tir a ,

SEG324

Abstract: COM136 STB 567 Comparison 6N6 amplifier 853E 45 853F 05VCC
Contextual Info: HD66762 HD66762 128 x 136-dot Graphics LCD Controller/Driver for 256 Colors Rev 1.0 October. 2001 Description The HD66762, color-graphics LCD controller and driver LSI, displays 128-by-136-dot graphics for 256 STN colors. The HD66762&#39;s bit-operation functions and a 16-bit high-speed

inconel thermocouple

Abstract: WT16-71515-000-0-00 WK18-71503-000-0-00 WF24 MJ-26 Hoskins2300 K20B WT20-11507-000-0-00 A1046 A0712
Contextual Info: WIRE AND ACCESSORIES Wire and Accessories Wire & Accessories Wire/Acc d Re 2-1 /2" BARBER-COLMAN CO. LOVES PARK, ILL. U.S.A. CL 90°, ceramic insulated HL BA LO RB VE ER S -C PA O RK LM , IL AN L. C U.S O . .A . 07 Si 18 ng 0 le Ex te ns io n Ja ck an d Bo

EL 817 C108

Abstract: STR 6456 star micro-electronics ltda Remington 700 ak 957 pioneer audio ic AEG - AKTIENGESELLSCHAFT ic 9022 spa microelectronic ltda Telefunken Electronic 867 905 101 A
Contextual Info: Te m ic Sates Offices TELEFUNKEN Semiconductors Addresses Europe Denmark Germany TEMIC Dansk d o AEG Dansk Aktieselskab Roskildevej 8-10 2620 Albertslund Tel: 45 42 6485 22 Fax: 45 43 6262 28 TEMIC TELEFUNKEN microelectronic GmbH Erfurter Strasse 31 85386 Eching

str f 6456

Abstract: str x 6456 SM 5126 BP STR F 6168 str 6668 STR G 6352 STR 6456 str f 6468 321 CJ 7121 AXP 209 IC
Contextual Info: Tem ic Se ni i co n fi li c t ci Sales Offices rs Addresses Europe France TE M IC France Les Q uadrants 3. avenue du centre B.P. 309 78054 S t.-Q uentin-en-Y veL nes Cedex Tel: 33 I 3060 7000 F a x :33 I 3060 V 11 i Germany TE M IC TE LEFU N K EN m icroelectronic G m bH

613 GB 123 CT

Abstract: transistor NEC D 587 Ic D 1708 ag 513 gb 173 ct MPA80 nec d 882 p transistor ic nec 2051 transistor NEC D 882 p NEC 2561 h NEC 2561 de
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA803T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD /xPA803T has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAW INGS (U n it: m m ) FEATURES • H igh fT

SN 4931

Abstract: 2sc 3476 2SC 1885 SN 4931 N
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the

490.2159

Abstract: Kombinat VEB Elektronische Bauelemente VEB Kombinat 49004 veb taschenbuch Kombinat VEB asterm Bauelementeinformation VEB M ik ro e le k tro n ik bauelemente Kombinat
Contextual Info: Widerstände Kombinat VEB Elektronische Bauelemente W ID E R S T Ä N D E In h a lt Feste S ch ic h tw id e rstä n d e Seite 6 V e r ä n d e rb a re S ch ich tw id e rstä n d e 50 Ein ste ilre g ier Kohleschicht Ein ste ilre g ler (Cerm etschicht) Potentiometer

icl7212

Abstract: Low Cost Digital Panel Meter Designs ICL7135 transistor a017 ICL7212A Low Cost Digital Panel Meter Designs" NH 12 NIXIE "Understanding the Auto-Zero and Common Mode 7135 led driver standard cmos 4000 series
Contextual Info: IC L 7 1 3 5 Precision 4Va D igit Single Chip A /D Converter D IM Ü Ö ^IIIL FEATURES GENERAL D ESCRIPTIO N • Accuracy guaranteed to ±1 count over entire ±20,000 counts 2.0000 volts full scale • Guaranteed zero reading for 0 volts input • 1 pA typical input current

HDSP-2000

Abstract: HDSP-2003 hdsp2003 HDSP2001 hp hdsp-2000 HDSP-2002 HDSP2000 HP 5x7 LED driver IC AD626 hdsp 2000
Contextual Info: HEWLETT-PACKARDi CMP N T S 20E I> • 4447564 Q0Dt>4bT T ■ _ 7 ^ / / - J 7 FOUR CHARACTER 3.8 m m 0.15 INCH 5X7 ALPHANUMERIC DISPLAYS STANDARD RED YELLOW HIGH EFFICIENCY RED HIGH PERFORMANCE GREEN HDSP-2000 HDSP-2001 HDSP-2002

B083D

Abstract: u82720 A110D TDA4100 ub8830d V40511D taa981 A109D sy 710 IC 7447
Contextual Info: > i ! U O i j q > i a | a S [ ^ ] 0 [ y y H erstellerbetriebe Bei den einzelnen Erzeugnissen werden die Herstellerbetriebe durch die nachfolgend angegebenen Symbole gekennzeichnet: VEB M ik ro e le k tro n ik „K a rl M a r x “ Erfurt L e itb e tr ie b im VEB K o m b in a t M ik ro e le k tr o n ik

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR ¿¿PA803T NPN SILICON EPITAXIALTRANSISTO R WITH BUILT-IN 2 ELEMENTS M INI MOLD ¿¡PA803T has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAWINGS (U n it: m m ) FEATURES •

0,22 j 160 tgl 55163

Abstract: VEB M ik ro e le k tro n ik Scans-048 TGL-200 asterm DSAGER0002 DSAGER00027 TGL 200
Contextual Info: ondensatoren T s c CD c~ t CD c T O Q _ CD Program m übersicht K a p a z itä ts b e re ic h B a u fo rm Typ/TG L 3300 1000 330 1000 38 159 pF - 0,1 //F p F - 0 ,1 f jf pF - 0,022 ,F p F - 0 , 0 2 2 ,F Spannungsre ih e T o le ra n z P rü fkla sse A n w e n d u n g s k la s s e