RJP60F Search Results

RJP60F Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
RJP60F0DPE-00#J3		Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 50A 122W LDPAK	Original	PDF		7
RJP60F0DPM-00#T1		Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 50A 40W TO-3PFM	Original	PDF		7
RJP60F4DPM-00#T1		Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 41.2W TO-3PFM	Original	PDF		7
RJP60F4DPQ-A0#T0		Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 235.8W TO-247A	Original	PDF		7
RJP60F5DPK-01#T0		Renesas Electronics America	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 80A 260.4W	Original	PDF	80.4KB
RJP60F5DPM-00#T1		Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 80A 45W TO-3PFM	Original	PDF		7

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Renesas Electronics Corporation


Renesas Electronics Corporation RJP60F4DPM-00-T1 IGBT TRENCH 600V 60A TO-3PFM
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DigiKey	RJP60F4DPM-00-T1	Tube	78		1	1 $6.45 10 $4.34 100 $4.34 1000 $4.34 10000 $4.34	Buy Now
Renesas Electronics Corporation RJP60F5DPK-01-T0 IGBT 600V 80A TO3P
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DigiKey	RJP60F5DPK-01-T0	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Renesas Electronics Corporation RJP60F5DPM-00-T1 IGBT TRENCH 600V 80A TO-3PFM
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DigiKey	RJP60F5DPM-00-T1	Tube			100	1 - 10 - 100 $2.11 1000 $2.11 10000 $2.11	Buy Now
Renesas Electronics Corporation RJP60F0DPE-00-J3 IGBT TRENCH 600V 50A LDPAK
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DigiKey	RJP60F0DPE-00-J3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	RJP60F0DPE-00-J3		2,212			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics Corporation RJP60F0DPM-00-T1 IGBT TRENCH 600V 50A TO-3PFM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJP60F0DPM-00-T1	Tube			1	1 $4.07 10 $2.82 100 $2.08 1000 $1.75 10000 $1.75	Buy Now

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RJP60F Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Datasheet RJP60F0DPE 600 V - 25 A - IGBT High Speed Power Switching R07DS0540EJ0100 Rev.1.00 Sep 09, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology	Original	RJP60F0DPE R07DS0540EJ0100 PRSS0004AE-B	PDF
RJP60F0DPE Contextual Info: Preliminary Datasheet RJP60F0DPE 600 V - 25 A - IGBT High Speed Power Switching R07DS0540EJ0100 Rev.1.00 Sep 09, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology	Original	RJP60F0DPE R07DS0540EJ0100 PRSS0004AE-B RJP60F0DPE	PDF
RJP60F4DPQ-A0 Contextual Info: Preliminary Datasheet RJP60F4DPQ-A0 600V - 30A - IGBT High Speed Power Switching R07DS0675EJ0100 Rev.1.00 Jul 30, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology	Original	RJP60F4DPQ-A0 R07DS0675EJ0100 PRSS0003ZH-A O-247A) RJP60F4DPQ-A0	PDF
Contextual Info: Preliminary Datasheet RJP60F4DPM 600 V - 30 A - IGBT High Speed Power Switching R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology	Original	RJP60F4DPM R07DS0586EJ0100 PRSS0003ZA-A	PDF
RJU60C Contextual Info: Preliminary Datasheet RJP60F7DPK 600V - 50A - IGBT High Speed Power Switching R07DS1001EJ0100 Rev.1.00 Jan 22, 2013 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology	Original	RJP60F7DPK R07DS1001EJ0100 PRSS0004ZE-A RJU60C	PDF
Contextual Info: Preliminary Datasheet RJP60F5DPK 600V - 40A - IGBT High Speed Power Switching R07DS0757EJ0100 Rev.1.00 May 31, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  High speed switching	Original	RJP60F5DPK R07DS0757EJ0100 PRSS0004ZE-A	PDF
Contextual Info: Preliminary Datasheet RJP60F5DPM 600V - 40A - IGBT High Speed Power Switching R07DS0587EJ0200 Rev.2.00 May 31, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology	Original	RJP60F5DPM R07DS0587EJ0200 PRSS0003ZA-A	PDF
Contextual Info: Preliminary Datasheet RJP60F5DPK 600V - 40A - IGBT High Speed Power Switching R07DS0757EJ0100 Rev.1.00 May 31, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  High speed switching	Original	RJP60F5DPK R07DS0757EJ0100 PRSS0004ZE-A	PDF
Contextual Info: Preliminary Datasheet RJP60F0DPM 600 V - 25 A - IGBT High Speed Power Switching R07DS0585EJ0100 Rev.1.00 Nov 25, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology	Original	RJP60F0DPM R07DS0585EJ0100 PRSS0003ZA-A	PDF
Contextual Info: Preliminary Datasheet RJP60F5DPM 600V - 40A - IGBT High Speed Power Switching R07DS0587EJ0200 Rev.2.00 May 31, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology	Original	RJP60F5DPM R07DS0587EJ0200 PRSS0003ZA-A	PDF
PRSS0003ZA-A Contextual Info: Preliminary Datasheet RJP60F0DPM 600 V - 25 A - IGBT High Speed Power Switching R07DS0585EJ0100 Rev.1.00 Nov 25, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology	Original	RJP60F0DPM R07DS0585EJ0100 PRSS0003ZA-A PRSS0003ZA-A	PDF
rjp60f4 Abstract: RJP60F Contextual Info: Preliminary Datasheet RJP60F4DPM 600 V - 30 A - IGBT High Speed Power Switching R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology	Original	RJP60F4DPM R07DS0586EJ0100 PRSS0003ZA-A rjp60f4 RJP60F	PDF
RJH60F7 Abstract: control circuit of induction cooker rjh60f5 RJH60F control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608 Contextual Info: IGBT Products Wide Range of IGBT Families Highly efficient power supply circuits can be achieved by combin- Key Features and Target Applications ing Renesas Electronics IGBTs and PFC controllers. Renesas supplies ultra-compact, high-performance IGBTs for built-in flash units	Original	RJH608 RJH60F 0212/100/in-house/LAH/JE RJH60F7 control circuit of induction cooker rjh60f5 control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608	PDF
RJK03P7DPA Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 Contextual Info: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position	Original	0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1	PDF