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RJP60F Datasheets (6)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
RJP60F0DPE-00#J3		Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 50A 122W LDPAK	Original	PDF		7
RJP60F0DPM-00#T1		Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 50A 40W TO-3PFM	Original	PDF		7
RJP60F4DPM-00#T1		Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 41.2W TO-3PFM	Original	PDF		7
RJP60F4DPQ-A0#T0		Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 235.8W TO-247A	Original	PDF		7
RJP60F5DPK-01#T0		Renesas Electronics America	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 80A 260.4W	Original	PDF	80.4KB
RJP60F5DPM-00#T1		Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 80A 45W TO-3PFM	Original	PDF		7

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Renesas Electronics Corporation


Renesas Electronics Corporation RJP60F0DPM-00#T1 Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel
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Rochester Electronics	RJP60F0DPM-00#T1		2		1	1 - 10 - 100 $62.35 1000 $55.79 10000 $52.50	Buy Now
Renesas Electronics Corporation RJP60F5DPK-01#T0 Stock
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Flip Electronics	RJP60F5DPK-01#T0		644			1 - 10 - 100 - 1000 - 10000 -	Get Quote

RJP60F Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Datasheet RJP60F0DPE 600 V - 25 A - IGBT High Speed Power Switching R07DS0540EJ0100 Rev.1.00 Sep 09, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology	Original	rjp60f0dpe r07ds0540ej0100 prss0004ae-b	PDF
RJP60F0DPE Contextual Info: Preliminary Datasheet RJP60F0DPE 600 V - 25 A - IGBT High Speed Power Switching R07DS0540EJ0100 Rev.1.00 Sep 09, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology	Original	rjp60f0dpe r07ds0540ej0100 prss0004ae-b	PDF
RJP60F4DPQ-A0 Contextual Info: Preliminary Datasheet RJP60F4DPQ-A0 600V - 30A - IGBT High Speed Power Switching R07DS0675EJ0100 Rev.1.00 Jul 30, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology	Original	rjp60f4dpq-a0 r07ds0675ej0100 prss0003zh-a o-247a	PDF
Contextual Info: Preliminary Datasheet RJP60F4DPM 600 V - 30 A - IGBT High Speed Power Switching R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology	Original	rjp60f4dpm r07ds0586ej0100 prss0003za-a	PDF
RJU60C Contextual Info: Preliminary Datasheet RJP60F7DPK 600V - 50A - IGBT High Speed Power Switching R07DS1001EJ0100 Rev.1.00 Jan 22, 2013 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology	Original	rjp60f7dpk r07ds1001ej0100 prss0004ze-a rju60c	PDF
Contextual Info: Preliminary Datasheet RJP60F5DPK 600V - 40A - IGBT High Speed Power Switching R07DS0757EJ0100 Rev.1.00 May 31, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  High speed switching	Original	rjp60f5dpk r07ds0757ej0100 prss0004ze-a	PDF
Contextual Info: Preliminary Datasheet RJP60F5DPM 600V - 40A - IGBT High Speed Power Switching R07DS0587EJ0200 Rev.2.00 May 31, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology	Original	rjp60f5dpm r07ds0587ej0200 prss0003za-a	PDF
Contextual Info: Preliminary Datasheet RJP60F5DPK 600V - 40A - IGBT High Speed Power Switching R07DS0757EJ0100 Rev.1.00 May 31, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  High speed switching	Original	rjp60f5dpk r07ds0757ej0100 prss0004ze-a	PDF
Contextual Info: Preliminary Datasheet RJP60F0DPM 600 V - 25 A - IGBT High Speed Power Switching R07DS0585EJ0100 Rev.1.00 Nov 25, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology	Original	rjp60f0dpm r07ds0585ej0100 prss0003za-a	PDF
Contextual Info: Preliminary Datasheet RJP60F5DPM 600V - 40A - IGBT High Speed Power Switching R07DS0587EJ0200 Rev.2.00 May 31, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology	Original	rjp60f5dpm r07ds0587ej0200 prss0003za-a	PDF
PRSS0003ZA-A Contextual Info: Preliminary Datasheet RJP60F0DPM 600 V - 25 A - IGBT High Speed Power Switching R07DS0585EJ0100 Rev.1.00 Nov 25, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology	Original	rjp60f0dpm r07ds0585ej0100 prss0003za-a	PDF
rjp60f4 Abstract: RJP60F Contextual Info: Preliminary Datasheet RJP60F4DPM 600 V - 30 A - IGBT High Speed Power Switching R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology	Original	rjp60f4dpm r07ds0586ej0100 prss0003za-a rjp60f4 +1rjp60f	PDF
RJH60F7 Abstract: control circuit of induction cooker rjh60f5 RJH60F control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608 Contextual Info: IGBT Products Wide Range of IGBT Families Highly efficient power supply circuits can be achieved by combin- Key Features and Target Applications ing Renesas Electronics IGBTs and PFC controllers. Renesas supplies ultra-compact, high-performance IGBTs for built-in flash units	Original	rjh608 rjh60f 0212/100/in-house/lah/je rjh60f7 +7control circuit of induction cooker rjh60f5 control ic for induction heating cooker rjh60f6 rjh60d2 rjh60f7dpq-a0 rjh1bf7	PDF
RJK03P7DPA Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 Contextual Info: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position	Original	0000-a pae-aa-12-0177-1 pae-aa-12-0049-1 rjk03p7dpa +9np109n055puj rjh60d7bdpq rjh60t04 rjp65t43 np75n04yug np60n055muk np109n04puk rju6052sdpd-e0 ps2761b-1	PDF