RJP60F0DPM Search Results
RJP60F0DPM Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| RJP60F0DPM-00#T1 |
|
IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 50A 40W TO-3PFM | Original | 7 |
RJP60F0DPM Price and Stock
Renesas Electronics Corporation RJP60F0DPM-00-T1IGBT TRENCH 600V 50A TO-3PFM |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
RJP60F0DPM-00-T1 | Tube | 1 |
|
Buy Now | ||||||
Renesas Electronics Corporation RJP60F0DPM-00#T1Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
RJP60F0DPM-00#T1 | 2 | 1 |
|
Buy Now | ||||||
RJP60F0DPM Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: Preliminary Datasheet RJP60F0DPM 600 V - 25 A - IGBT High Speed Power Switching R07DS0585EJ0100 Rev.1.00 Nov 25, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) Trench gate and thin wafer technology |
Original |
RJP60F0DPM R07DS0585EJ0100 PRSS0003ZA-A | |
PRSS0003ZA-AContextual Info: Preliminary Datasheet RJP60F0DPM 600 V - 25 A - IGBT High Speed Power Switching R07DS0585EJ0100 Rev.1.00 Nov 25, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) Trench gate and thin wafer technology |
Original |
RJP60F0DPM R07DS0585EJ0100 PRSS0003ZA-A PRSS0003ZA-A | |
RJK03P7DPA
Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
|
Original |
0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 |