R07DS0585EJ0100 Search Results
R07DS0585EJ0100 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: Preliminary Datasheet RJP60F0DPM 600 V - 25 A - IGBT High Speed Power Switching R07DS0585EJ0100 Rev.1.00 Nov 25, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) Trench gate and thin wafer technology |
Original |
RJP60F0DPM R07DS0585EJ0100 PRSS0003ZA-A | |
PRSS0003ZA-AContextual Info: Preliminary Datasheet RJP60F0DPM 600 V - 25 A - IGBT High Speed Power Switching R07DS0585EJ0100 Rev.1.00 Nov 25, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) Trench gate and thin wafer technology |
Original |
RJP60F0DPM R07DS0585EJ0100 PRSS0003ZA-A PRSS0003ZA-A |