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RJP60D Datasheets (4)

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Renesas Electronics

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
RJP60D0DPE-00#J3		Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 122W LDPAK	Original	PDF		7
RJP60D0DPK-00#T0		Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 140W TO-3P	Original	PDF		7
RJP60D0DPM-00#T1		Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 40W TO-3PFM	Original	PDF		7
RJP60D0DPP-M0#T2		Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 35W TO-220FL	Original	PDF		7

RJP60D Price and Stock

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Renesas Electronics Corporation


Renesas Electronics Corporation RJP60D0DPM-00#T1 Stock
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Flip Electronics	RJP60D0DPM-00#T1		2,065			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics Corporation RJP60D0DPP-MB#T2 Stock
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Flip Electronics	RJP60D0DPP-MB#T2		1,789			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics Corporation RJP60D0DPK-00#T0 Stock
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Flip Electronics	RJP60D0DPK-00#T0		1,097			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics Corporation RJP60D0DPM-00-T1 Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	RJP60D0DPM-00-T1		1,027			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics Corporation RJP60D0DPP-M0-T2 Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-220AB
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Vyrian	RJP60D0DPP-M0-T2		425			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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RJP60D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power Switching R07DS0088EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C)	Original	rjp60d0dpm r07ds0088ej0200 prss0003za-a impeda9044	PDF
rjp60d Abstract: RJp60 rjp60d0 R07DS0166EJ0100 RJP60D0DPK PRSS0004ZE-A SC-65 Silicon N Channel IGBT HIGH SPEED rjp6 JEITA Contextual Info: Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0166EJ0100 Rev.1.00 Sep 28, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	rjp60d0dpk r07ds0166ej0100 prss0004ze-a temperature9044 +7rjp60d rjp60 rjp60d0 sc-65 silicon n channel igbt high speed rjp6 jeita	PDF
rjp60d Contextual Info: Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power Switching R07DS0088EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C)	Original	rjp60d0dpm r07ds0088ej0200 prss0003za-a rjp60d	PDF
rjp60d Contextual Info: Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	rjp60d0dpk r07ds0166ej0300 prss0004ze-a rjp60d	PDF
Contextual Info: Preliminary Datasheet RJP60D0DPE Silicon N Channel IGBT High Speed Power Switching R07DS0172EJ0100 Rev.1.00 Nov 15, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	rjp60d0dpe r07ds0172ej0100 prss0004ae-b junctio9044	PDF
RJP60D0DPP-M0 Contextual Info: Preliminary Datasheet RJP60D0DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0173EJ0100 Rev.1.00 Mar 11, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	rjp60d0dpp-m0 r07ds0173ej0100 prss0003af-a o-220fl	PDF
rjp60d0dpp Abstract: RJP60D0DPP-M0 Contextual Info: Preliminary Datasheet RJP60D0DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0173EJ0100 Rev.1.00 Mar 11, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	rjp60d0dpp-m0 r07ds0173ej0100 prss0003af-a o-220fl +1rjp60d0dpp	PDF
Contextual Info: Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0166EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	rjp60d0dpk r07ds0166ej0200 prss0004ze-a	PDF
rjp60d Contextual Info: Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	rjp60d0dpk r07ds0166ej0300 prss0004ze-a rjp60d	PDF
30g 122 igbt Abstract: rjp60d RJp60 RJP60D0DPE-00-J3 rjp6 Contextual Info: Preliminary Datasheet RJP60D0DPE Silicon N Channel IGBT High Speed Power Switching R07DS0172EJ0100 Rev.1.00 Nov 15, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	rjp60d0dpe r07ds0172ej0100 prss0004ae-b impedanc9044 +530g 122 igbt rjp60d rjp60 rjp60d0dpe-00-j3 rjp6	PDF
rjp60d Abstract: RJP60D0DPM-00-T1 RJp60 RJP60D0DPM TO-3PF PRSS0003ZA-A rjp60d0 R07DS0088EJ0100 Contextual Info: Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power Switching R07DS0088EJ0100 Rev.1.00 Sep 28, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C)	Original	rjp60d0dpm r07ds0088ej0100 prss0003za-a rjp60d +4rjp60d0dpm-00-t1 rjp60 to-3pf rjp60d0	PDF
RJH60F7 Abstract: control circuit of induction cooker rjh60f5 RJH60F control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608 Contextual Info: IGBT Products Wide Range of IGBT Families Highly efficient power supply circuits can be achieved by combin- Key Features and Target Applications ing Renesas Electronics IGBTs and PFC controllers. Renesas supplies ultra-compact, high-performance IGBTs for built-in flash units	Original	rjh608 rjh60f 0212/100/in-house/lah/je rjh60f7 +7control circuit of induction cooker rjh60f5 control ic for induction heating cooker rjh60f6 rjh60d2 rjh60f7dpq-a0 rjh1bf7	PDF
RJH60F7 Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652 Contextual Info: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to	Original	rjp6085dpn o-220ab rjp6085dpk rjh6085bdpk +13rjh6086bdpk rjh6087bdpk rjh6088bdpk rjh60f7 rjh60f5 rjh60 rjh60f4 rjh60f7a bcr25kr rjh60f6 rjh1cf7 rjh60d2 rjk0652	PDF
RJP63k2 Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching	Original	r07cs0003ej0100 rjp63k2 rjp63f3 rjp30e2 +7rjp30h2 rjj0319dsp rjp63f rjp30h3 rjj0319 bcr1am-12a equivalent rjj0606	PDF

RJK03P7DPA Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 Contextual Info: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position	Original	0000-a pae-aa-12-0177-1 pae-aa-12-0049-1 rjk03p7dpa +9np109n055puj rjh60d7bdpq rjh60t04 rjp65t43 np75n04yug np60n055muk np109n04puk rju6052sdpd-e0 ps2761b-1	PDF