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RJP60 Datasheets (13)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
RJP6085DPK-00#T0	Renesas Technology	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 40A 178.5W TO-3P	Original	PDF		8
RJP6085DPN-00#T2	Renesas Technology	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 40A 178.5W TO-220AB	Original	PDF		8
RJP60D0DPE-00#J3	Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 122W LDPAK	Original	PDF		7
RJP60D0DPK-00#T0	Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 140W TO-3P	Original	PDF		7
RJP60D0DPM-00#T1	Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 40W TO-3PFM	Original	PDF		7
RJP60D0DPP-M0#T2	Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 35W TO-220FL	Original	PDF		7
RJP60F0DPE-00#J3	Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 50A 122W LDPAK	Original	PDF		7
RJP60F0DPM-00#T1	Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 50A 40W TO-3PFM	Original	PDF		7
RJP60F4DPM-00#T1	Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 41.2W TO-3PFM	Original	PDF		7
RJP60F4DPQ-A0#T0	Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 235.8W TO-247A	Original	PDF		7
RJP60F5DPK-01#T0	Renesas Electronics America	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 80A 260.4W	Original	PDF	80.4KB
RJP60F5DPM-00#T1	Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 80A 45W TO-3PFM	Original	PDF		7
RJP60V0DPM-00#T1	Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 40W TO-3PFM	Original	PDF		8

RJP60 Price and Stock

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Renesas Electronics Corporation


Renesas Electronics Corporation RJP6055DPP-90#T2 RJP6055DPP-90#T2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	RJP6055DPP-90#T2		38,872		188	1 - 10 - 100 - 1000 $1.79 10000 $1.68	Buy Now
	RJP6055DPP-90#T2		527		188	1 - 10 - 100 - 1000 $1.79 10000 $1.68	Buy Now
Rochester Electronics	RJP6055DPP-90#T2		39,399		1	1 - 10 - 100 $1.60 1000 $1.43 10000 $1.34	Buy Now
Renesas Electronics Corporation RJP6065DPN-P1#T2 RJP6065DPN-P1#T2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	RJP6065DPN-P1#T2		1,061		120	1 - 10 - 100 - 1000 $2.81 10000 $2.65	Buy Now
	RJP6065DPN-P1#T2		304		120	1 - 10 - 100 - 1000 $2.81 10000 $2.65	Buy Now
Rochester Electronics	RJP6065DPN-P1#T2		1,365		1	1 - 10 - 100 $2.52 1000 $2.25 10000 $2.12	Buy Now
Renesas Electronics Corporation RJP6065DPE-00#J3 RJP6065DPE-00#J3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	RJP6065DPE-00#J3		1,000		156	1 - 10 - 100 - 1000 $2.16 10000 $2.02	Buy Now
Rochester Electronics	RJP6065DPE-00#J3		1,000		1	1 - 10 - 100 $1.93 1000 $1.73 10000 $1.62	Buy Now
Renesas Electronics Corporation RJP6006DPM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	RJP6006DPM		312			1 $3.44 10 $3.44 100 $2.29 1000 $2.12 10000 $2.12	Buy Now
Renesas Electronics Corporation RJP60F0DPM-00#T1 Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	RJP60F0DPM-00#T1		2		1	1 - 10 - 100 $62.35 1000 $55.79 10000 $52.50	Buy Now

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RJP60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power Switching R07DS0088EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C)	Original	rjp60d0dpm r07ds0088ej0200 prss0003za-a impeda9044	PDF
rjp60d Abstract: RJp60 rjp60d0 R07DS0166EJ0100 RJP60D0DPK PRSS0004ZE-A SC-65 Silicon N Channel IGBT HIGH SPEED rjp6 JEITA Contextual Info: Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0166EJ0100 Rev.1.00 Sep 28, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	rjp60d0dpk r07ds0166ej0100 prss0004ze-a temperature9044 +7rjp60d rjp60 rjp60d0 sc-65 silicon n channel igbt high speed rjp6 jeita	PDF
Contextual Info: Preliminary Datasheet RJP6016JPE 600 V - 40 A- N Channel IGBT High Speed Power Switching R07DS0878EJ0100 Rev.1.00 Sep 19, 2012 Features • For Automotive application  AEC-Q101 compliant  Low collector to emitter saturation voltage. VCE sat = 1.7 V typ. (IC = 20 A, VGE = 15 V, Ta = 25 C)	Original	rjp6016jpe aec-q101 r07ds0878ej0100 prss0004ae-b	PDF
rjp60d Contextual Info: Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power Switching R07DS0088EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C)	Original	rjp60d0dpm r07ds0088ej0200 prss0003za-a rjp60d	PDF
RJP60V0DPM Contextual Info: Preliminary Datasheet RJP60V0DPM 600V - 22A - IGBT Application: Inverter R07DS0669EJ0100 Rev.1.00 Feb 07, 2012 Features • High breakdown-voltage  Low Collector to Emitter saturation Voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	rjp60v0dpm r07ds0669ej0100 prss0003za-a	PDF
rjp60d Contextual Info: Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	rjp60d0dpk r07ds0166ej0300 prss0004ze-a rjp60d	PDF
Contextual Info: Preliminary Datasheet RJP60V0DPM-80 600V - 22A - IGBT Application: Inverter R07DS1036EJ0100 Rev.1.00 Mar 01, 2013 Features • High breakdown-voltage  Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	rjp60v0dpm-80 r07ds1036ej0100 prss0003zd-a	PDF
Contextual Info: Preliminary Datasheet RJP60D0DPE Silicon N Channel IGBT High Speed Power Switching R07DS0172EJ0100 Rev.1.00 Nov 15, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	rjp60d0dpe r07ds0172ej0100 prss0004ae-b junctio9044	PDF
Contextual Info: Preliminary Datasheet RJP60F0DPE 600 V - 25 A - IGBT High Speed Power Switching R07DS0540EJ0100 Rev.1.00 Sep 09, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology	Original	rjp60f0dpe r07ds0540ej0100 prss0004ae-b	PDF
RJP60D0DPP-M0 Contextual Info: Preliminary Datasheet RJP60D0DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0173EJ0100 Rev.1.00 Mar 11, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	rjp60d0dpp-m0 r07ds0173ej0100 prss0003af-a o-220fl	PDF
Contextual Info: Preliminary Datasheet RJP60V0DPM 600V - 22A - IGBT Application: Inverter R07DS0669EJ0100 Rev.1.00 Feb 07, 2012 Features • High breakdown-voltage  Low Collector to Emitter saturation Voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	rjp60v0dpm r07ds0669ej0100 prss0003za-a	PDF
RJP60F0DPE Contextual Info: Preliminary Datasheet RJP60F0DPE 600 V - 25 A - IGBT High Speed Power Switching R07DS0540EJ0100 Rev.1.00 Sep 09, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology	Original	rjp60f0dpe r07ds0540ej0100 prss0004ae-b	PDF
RJP60F4DPQ-A0 Contextual Info: Preliminary Datasheet RJP60F4DPQ-A0 600V - 30A - IGBT High Speed Power Switching R07DS0675EJ0100 Rev.1.00 Jul 30, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology	Original	rjp60f4dpq-a0 r07ds0675ej0100 prss0003zh-a o-247a	PDF
Contextual Info: Preliminary Datasheet RJP60F4DPM 600 V - 30 A - IGBT High Speed Power Switching R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology	Original	rjp60f4dpm r07ds0586ej0100 prss0003za-a	PDF

rjp60d0dpp Abstract: RJP60D0DPP-M0 Contextual Info: Preliminary Datasheet RJP60D0DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0173EJ0100 Rev.1.00 Mar 11, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	rjp60d0dpp-m0 r07ds0173ej0100 prss0003af-a o-220fl +1rjp60d0dpp	PDF
Contextual Info: Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0166EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	rjp60d0dpk r07ds0166ej0200 prss0004ze-a	PDF
RJU60C Contextual Info: Preliminary Datasheet RJP60F7DPK 600V - 50A - IGBT High Speed Power Switching R07DS1001EJ0100 Rev.1.00 Jan 22, 2013 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology	Original	rjp60f7dpk r07ds1001ej0100 prss0004ze-a rju60c	PDF
rjp60d Contextual Info: Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0166EJ0300 Rev.3.00 Jul 13, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	rjp60d0dpk r07ds0166ej0300 prss0004ze-a rjp60d	PDF
RJP6065 Abstract: RJP6065DPM RJP6065DP RJP6065DPM-00-T1 RJP606 Contextual Info: Preliminary Datasheet RJP6065DPM Silicon N Channel IGBT High Speed Power Switching R07DS0204EJ0100 Rev.1.00 Nov 19, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C)  Gate to emitter voltage rating 30 V	Original	rjp6065dpm r07ds0204ej0100 prss0003za-a rjp6065 +3rjp6065dp rjp6065dpm-00-t1 rjp606	PDF
Contextual Info: Preliminary Datasheet RJP60F5DPK 600V - 40A - IGBT High Speed Power Switching R07DS0757EJ0100 Rev.1.00 May 31, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  High speed switching	Original	rjp60f5dpk r07ds0757ej0100 prss0004ze-a	PDF
30g 122 igbt Abstract: rjp60d RJp60 RJP60D0DPE-00-J3 rjp6 Contextual Info: Preliminary Datasheet RJP60D0DPE Silicon N Channel IGBT High Speed Power Switching R07DS0172EJ0100 Rev.1.00 Nov 15, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	rjp60d0dpe r07ds0172ej0100 prss0004ae-b impedanc9044 +530g 122 igbt rjp60d rjp60 rjp60d0dpe-00-j3 rjp6	PDF
rjp60d Abstract: RJP60D0DPM-00-T1 RJp60 RJP60D0DPM TO-3PF PRSS0003ZA-A rjp60d0 R07DS0088EJ0100 Contextual Info: Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power Switching R07DS0088EJ0100 Rev.1.00 Sep 28, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C)	Original	rjp60d0dpm r07ds0088ej0100 prss0003za-a rjp60d +4rjp60d0dpm-00-t1 rjp60 to-3pf rjp60d0	PDF
Contextual Info: Preliminary Datasheet RJP60F5DPM 600V - 40A - IGBT High Speed Power Switching R07DS0587EJ0200 Rev.2.00 May 31, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology	Original	rjp60f5dpm r07ds0587ej0200 prss0003za-a	PDF
Contextual Info: Preliminary Datasheet RJP60V0DPM-80 600V - 22A - IGBT Application: Inverter R07DS1036EJ0200 Rev.2.00 Apr 02, 2014 Features • High breakdown-voltage • Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)	Original	rjp60v0dpm-80 r07ds1036ej0200 prss0003zd-a th2886-9022/9044	PDF

RJP60 Search Results

RJP60 Datasheets (13)

RJP60 Price and Stock

Renesas Electronics Corporation RJP6055DPP-90#T2

Renesas Electronics Corporation RJP6065DPN-P1#T2

Renesas Electronics Corporation RJP6065DPE-00#J3

Renesas Electronics Corporation RJP6006DPM

Renesas Electronics Corporation RJP60F0DPM-00#T1

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30g 122 igbt

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