RJK5026DPP Search Results

Contextual Info: Preliminary Datasheet RJK5026DPP-M0 Silicon N Channel MOS FET High Speed Power Switching R07DS0422EJ0100 Rev.1.00 May 26, 2011 Features • Low on-resistance RDS on = 1.35 Ω typ. (at ID = 3 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching

Contextual Info: Preliminary Datasheet RJK5026DPP R07DS0360EJ0200 Previous: REJ03G1734-0100 Rev.2.00 Apr 15, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 1.35 Ω typ. (at ID = 3 A, VGS = 10 V, Ta = 25°C) • Low leakage current

NS5100

Contextual Info: Preliminary Datasheet RJK5026DPP-E0 500V - 6A - MOS FET High Speed Power Switching R07DS0608EJ0100 Rev.1.00 Jun 21, 2012 Features • Low on-resistance RDS on = 1.35  typ. (at ID = 3 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching

Contextual Info: Preliminary Datasheet RJK5026DPP R07DS0360EJ0200 Previous: REJ03G1734-0100 Rev.2.00 Apr 15, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 1.35 Ω typ. (at ID = 3 A, VGS = 10 V, Ta = 25°C) • Low leakage current

RJK5026DPP

Abstract: RJK5026DPP-00-T2
Contextual Info: RJK5026DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1734-0100 Rev.1.00 Sep 11, 2008 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A Package name: TO-220FN D 1. Gate

Contextual Info: Preliminary Datasheet RJK5026DPP-M0 Silicon N Channel MOS FET High Speed Power Switching R07DS0422EJ0100 Rev.1.00 May 26, 2011 Features • Low on-resistance RDS on = 1.35 Ω typ. (at ID = 3 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching

RJK5026DPP

Abstract: RJK5026DPP-00-T2
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

RJJ0319DSP

Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Contextual Info: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?

rjp6065

Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

rjh60f5

Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
Contextual Info: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.

R2J24020F

Abstract: R2A20117 R2J240 R2J24020 HAT1130r R2A20114 10A triac control PWM battery Charger dimmer diagrams IGBT r2a20104 pfc pwm evaluation board R2A20114
Contextual Info: 2009.07 ルネサス 電源システム RENESAS Power supply system www.renesas.com 電気に変換されたエネルギーは無駄なく使うことで地球全体 の炭素使用量を減らし地球の温暖化を防ぐことができます。 電気は主に発電所で作られ、高電圧のACで送電されること