RIP TRANSISTOR Search Results

"embedded dram" and market share 2010

Abstract: "embedded dram" and market share Motherboard SERVES SOLUTIONS ALI chipset PC333 rAM FeRAM Transmeta PC200 PC333 VCM driver mobile
Contextual Info: Future DRAM Requirements Addressing the Needs of the Industry Name: Title: Company: Division/ Department: Gil Russell Infineon Technologies AG MP SM PM Historic View DRAM MEMORY ROAD; is soon forgotten BEDO RIP FPM EDO VRAM RIP Static Column RIP 5V Asynchronous

PHOTOTRANSISTOR 3 PIN

Abstract: rIP 31 TRANSISTOR led phototransistor 3 pin Infrared phototransistor TO18 3 pin phototransistor IR LED infrared led Transistor AC 51 Photosensors Optoisolators "Photo Interrupter" dual transistor
Contextual Info: OPTOELECTRONICS D e s c rip tio n TABLE OF CONTENTS Page D e s c rip tio n Page How To Use This Catalog 2 INFRARED IR COMPONENTS Part Number Index 3 How To Use The Infrared (IR) Section 31 Infrared (IR) Specification Definitions 32 Plastic Infrared Liqht Emittinq Diodes

Contextual Info: rZ J SGS-THOMSON ^ 7 / [«»[lUglgTOMntgl_MSC81002 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . EMITTER BALLASTED . VSWR CAPABILITY oo:1 @ RATED CONDITIONS . HERMETIC ST RIP AC PACKAGE . Pout = 2.0 W MIN. WITH 10 dB GAIN @

transistor smd marking mx

Abstract: smd marking ARB TRANSISTOR SMD MARKING CODE ARB Siemens+TDA+2026
Contextual Info: SIEMENS PEB 2026 PEF 2026 Table of Contents Page 1 1.1 1.2 1.3 General D e s c rip tio n .3 F e a tu re s . 5

Contextual Info: SGS-THOMSON MSC82001 lELC RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS EMITTER BALLASTED REFRACTORYyGOLD METALLIZATION VSWR CAPABILITY oo ;1 @ RATED CONDITIONS HERMETIC ST RIP AC PACKAGE P out = 1.0 W MIN. WITH 7 .0 dB GAIN @ 2 .0 GHz

TG 2039

Abstract: 2SD1876 TV horizontal Deflection Systems 2SD187
Contextual Info: Ordering number:EN 2423 2 S D 1 8 7 6 NPN T rip le Diffused Planar Type S ilicon Transistor Color TV Hori zontal Deflection Output Applications Applications . Color TV horizontal deflection output . Color display horizontal deflection output Features . High speed tf=100ns

SiGe POWER TRANSISTOR

Abstract: AND8068 Nortel OC-192
Contextual Info: AND8068/D Chips that Rip SiGe Activates the Next Generation of Broadband Communication Devices http://onsemi.com APPLICATION NOTE • Asynchronous Transfer Mode ATM switches • Passive Optical Network (PON) • Smart ATM+Internet Protocol (IP) networking

4027bc

Contextual Info: CD4027BM/CD4027BC g g National Semiconductor CD4027BM/CD4027BC Dual J-K Master/Slave Rip-Rop with Set and Reset General Description Features These dual J-K flip-flops are monolithic complementary MOS CMOS integrated circuits constructed with N-and P-channet enhancement mode transistors. Each flip-flop

U237A

Abstract: U237 2SC3457
Contextual Info: Ordering num ber:EN 1580C f SA\YO _2SC3457 No.1580C NPN T rip le Diffused planar Type S ilico n Transistor 1 F or Sw it c h in g Reg ulator s Features . High breakdown voltage and high reliability. . Fast switching speed tf: 0.1ps typ . . Wide ASO.

NDS9933

Abstract: Transistor c 4138 LA 4138
Contextual Info: National w j f May 1996 Semiconductor” NDS9933 Dual P-Channel Enhancement Mode Field Effect Transistor G en eral D e sc rip tio n F eatu res These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DM0S technology.

Contextual Info: MOTOROLA Order this document by MPQ3467/D SEMICONDUCTOR TECHNICAL DATA Quad Memory Driver Transistor MPQ3467 PNP Silicon Motorola Preferred Device [»i rip nal rm föi ryi ryi Lr-vJ PNP rv n rv i LU LU LU LU LU LU LU MAXIMUM RATINGS Rating Symbol Value Unit

TV horizontal Deflection Systems LG

Abstract: 2SD1884 08af TV horizontal Deflection Systems power ic of lg tv
Contextual Info: Ordering number: EN 2431 2S D 1884 ised Planar Typ NPN T rip le Diffused Type I icon S ilic o n Transistoi Transistor Color TV Hori zo n ta l D e flection Output Appli cations Applications . Color TV horizontal deflection output . Color display horizontal deflection output

EF6800

Abstract: EF6820P
Contextual Info: F6820 FAIRCHILD Perinheral Ariantpr 1 I V I U I IIntprfacp I I I v i 1G v v M U C IU Id A Schlumberger Company PIA Microprocessor Product Logic Symbol Description T h eF6820* P e rip h e ra l In te rfa c e A d a p te r (PIA) p ro v id e s th e u n iv e rs a l m e ans o f in te rfa c in g p e rip h e ra l e q u ip m e n t to

Contextual Info: Y XC4000, XC4000A, XC4000H Logic Cell Array Families ^ Product Description Features D e sc rip tio n • Third Generation Field-Programmable Gate Arrays - Abundant flip-flops - Flexible function generators - On-chip ultra-fast RAM - Dedicated high-speed carry-propagation circuit

NDT451AN

Abstract: u1130
Contextual Info: July 1996 National Semiconductor" N D T451AN N-Channel Enhancement Mode Field Effect Transistor F e a tu re s G e n e ra l D e s c rip tio n These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology,

CA30288

Abstract: CA3053 ca3028 ca3049 CA3051 500bw
Contextual Info: Selection Guide DIFFERENTIAL AMPLIFIERS Typo D e s c rip tio n CA3002 IF Amplifier CA3028A Differential /C ascode Amplifiers CA30288 F ea tures • Balanced differential-am ptifier configuration with controlled constant-current source • RF, if, and video frequency capability

L600M

Contextual Info: Panasonic ICs for Motor AN3840NSR VTR Capstan-Drive 1C • Overview AN3840NSR Unit ; mm The AN 3840N SR is an 1C for driving the V T R capstan motor. The reduction of acoustic noise, vibration and torque rip­ ple of motor can be realized. ■ Features • Output transistor built-in

LCX017BL

Abstract: LCX* sony
Contextual Info: SONY AMmïâe^ Information 4.6 cm 1.8-inch 786K-dot LCD for XGA Data Projector LCX017BL d e s c rip tio n ^ The LCX017BL is an active matrix LCD addressed by polycrystalline silicon super thin film transistors with a built-in peripheral driving circuit. This black-and-white panel has a square

Contextual Info: July 19 96 N ational Semiconductor" NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor G e n e ra l D e s c rip tio n F e a tu re s These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS

Contextual Info: SGS-THOMSON MSC82306 ;L[ RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS PRELIM INA R Y DATA « R EFRACTORY\G O LD METALLIZATION • VSW R CAPABILITY 20:1 @ RATED C O N D ITIO N S . H ER M ETIC ST RIP AC PACKAGE . P o u t = 5.5 W MIN. W ITH 9.6 dB GAIN

445-021

Abstract: EL4450C EL4450CM EL4450CN QCXG002
Contextual Info: EL4450C éiantec EL4450C Wideband Four-Quadrant Multiplier HIGH PERFORMANCE ANAtflG INTEGRATED CIRCUITS F e a tu re s G en era l D e sc rip tio n • Complete four-quandrant multiplier with output amp— requires no extra components • Good linearity o f 0.3 %

diode 1BL

Abstract: NDS356P
Contextual Info: March 1996 Na t i o n a l Semiconductor ” NDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor F eatu re s • -1.1 A, -20V. RDS 0N1 = 0.3Q @ VGS = -4.5V. G en eral D e sc rip tio n These P-Channe! logic level enhancement mode power field effect transistors are produced using

Contextual Info: ERICSSON í PTE 20266 45 Watts, 1.8-2.0 GHz PCN/PCS Po w e r T ransistor D e sc rip tio n The 20266 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended

Contextual Info: ERICSSON ^ PTB 20031 40 Watts, 420-470 MHz UHF TV Power Transistor D e s c rip tio n The 20031 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 420 to 470 MHz. It is rated at 40 watts minimum output power, and may be used for both CW and