RGK 13 Search Results

2N2329

Abstract: 2N2327 2N2328
Contextual Info: 2N2327 thur 2N2329 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits . MAXIMUM RATINGS * TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NON-REP) IT(RMS) ITSM Ratings

Contextual Info: 4-1. Thyristors Thyristors Absolute Maximum Ratings Parameter Repetitive Peak Off-state voltage Non-repetitive Peak Off-state voltage Tj = –40 to Tjmax RGK = 1kΩ VDRM V VDSM (V) TF321S 200 300 TF341S 400 500 Type No. Electric Characteristics Mean On-state

rgk 20

Abstract: rgk 20/1 rgk 66 rgk 30 rgk 20/2 Scans-048 RGK20 DSAGER00039
Contextual Info: Vergleichstabelle verschiedener Relaistypen und -arten Typ Erregerspannung [V] Leistungsaufnahme [W] maximale Schaltspannung [V] Schutzgaskontaktrelais 11GK 20 UGK 30 RGK 66 4; 6; 12; 18; 24 «0,18* «0,35* 2; 4; 6; 18 . 24 «0,25* «0,35* 12; 48; 60 110 150 ~

VOLTAGE-60

Contextual Info: COMSET SEMICONDUCTORS 2N2322 thru 2N2326 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits MAXIMUM RATINGS * TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NON-REP)

TF541M

Abstract: TF561S-A TF861S TM1661S-L TM1261S-L TM861s tf521s TF541M DATASHEET tm361s tfd312s-o
Contextual Info: 4 Thyristors 4-1. Thyristors 4-2. Triacs 4-3. PNPN Switch 31 4-1. Thyristors Thyristors Absolute Maximum Ratings Parameter Repetitive Peak Off-state voltage Non-repetitive Peak Off-state voltage Tj = –40 to Tjmax RGK = 1kΩ VDRM V VDSM (V) TF321S 200

2N2325

Abstract: 2N2324 2N2326 2N2322 2N2323
Contextual Info: 2N2322 thru 2N2326 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits MAXIMUM RATINGS * TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NON-REP) IT(RMS) ITSM Ratings Peak reverse blocking voltage (1)

TK-212

Abstract: tk3160 TK1406V TK2140 TK3120 TK1401 TK1402 TK1414 TK2120 tk2160
Contextual Info: Caractéristiques électriques Electrical characteristics Valeurs limites Absolute max. ratings >TSM vdw m TY PE S 'o vrw m V rsM 10ms Vq t 'g t Ih RGK = oo V TM ,amb = 25°C <RM@ V DWM v rw m (A) 140 A eff (rms) TK1401 TK1402 TK1404 TK1406 TK1408 TK1410

Contextual Info: RC7331/32 RC7331/32 Active Load V,SINK anc* ^ S O U R C E to current conversion is 10 mA per volt with RgR and RgK equal to 1 k il This voltage to current conversion is performed within the RC7331/32 Active Loads and the low bias current re­ quired (5.0 jiA typ.) allows for the setting of output current

rgk 13

Abstract: SLA0201 VD600V
Contextual Info: 5A 600V 4 circuits Thyristor array SLA0201 • Features External Dimensions Unit: mm 16.0± 0.2 13.0± 0.2 9.9± 0.2 4.8± 0.2 a 1.7± 0.1 b Thy1 Thy2 Thy3 Thy4 2.7 9.5min (10.4) ●Gate trigger current: IGT=10mA max 8.5max ●Repetitive peak off-state voltage: VDRM=600V

SLA0201

Contextual Info: 5A 600V 4 circuits Thyristor array SLA0201 • Features External Dimensions Unit: mm 16.0± 0.2 13.0± 0.2 9.9± 0.2 4.8± 0.2 a 1.7± 0.1 b Thy1 Thy2 Thy3 Thy4 2.7 9.5min (10.4) ●Gate trigger current: IGT=10mA max 8.5max ●Repetitive peak off-state voltage: VDRM=600V

Contextual Info: 5A 600V 4 circuits Thyristor array SLA0201 • Features External Dimensions Unit: mm 16.0± 0.2 13.0± 0.2 9.9± 0.2 4.8± 0.2 a 1.7± 0.1 b Thy1 Thy2 Thy3 Thy4 2.7 9.5min (10.4) ●Gate trigger current: IGT=10mA max 8.5max ●Repetitive peak off-state voltage: VDRM=600V

Contextual Info: TO-220F 3A Thyristor with built-in Avalanche diode TFD312S series • Features External Dimensions Unit: mm ●Gate trigger current: IGT=10mA max 13.0 min ●Isolation voltage: VISO=1500V(50Hz AC, RMS, 1min.) ±0.2 4.2 C 0.5 2.8 ±0.2 φ ±0.2 3.3 A 0.2

TF321S

Abstract: TF341S TF361S
Contextual Info: TO-220F 3A Thyristor TF321S, TF341S, TF361S • Features External Dimensions φ 3.3±0.2 ●Gate trigger current: IGT=15mA max 13.0 min ●Isolation voltage: VISO=1500V 50Hz Sine wave, RMS 3.9±0.2 0.8±0.2 16.9± 0.3 ●Average on-state current: IT(AV)=3A

Contextual Info: TO-220F 5A High sensitive Thyristor TF541S-A,TF561S-A • Features External Dimensions ●High sensitive Gate trigger current: IGT=0.2mA max 13.0 min ●Isolation voltage: VISO=1500V 50Hz Sine wave, RMS 0.2 0.2 3.9± 0.8± 0.3 16.9± 0.2 8.4± ●Repetitive peak off-state voltage: VDRM=400, 600V

TF861S

Abstract: tf841s TF821S
Contextual Info: TO-220F 8A Thyristor TF821S, TF841S, TF861S • Features External Dimensions φ 3.3±0.2 ●Gate trigger current: IGT=15mA max ●Isolation voltage: VISO=1500V 50Hz Sine wave, RMS 13.0 min ●UL approved type available 3.9±0.2 0.8±0.2 16.9± 0.3 ●Average on-state current: IT(AV)=8A

Contextual Info: TO-220F 3A Thyristor TF321S, TF341S, TF361S • Features External Dimensions φ 3.3±0.2 ●Gate trigger current: IGT=15mA max 13.0 min ●Isolation voltage: VISO=1500V 50Hz Sine wave, RMS 0.2 0.2 3.9± 0.8± 16.9± 0.3 ●Average on-state current: IT(AV)=3A

TF321S

Abstract: TF341S TF361S 842 402
Contextual Info: TO-220F 3A Thyristor TF321S, TF341S, TF361S • Features External Dimensions φ 3.3±0.2 ●Gate trigger current: IGT=15mA max 13.0 min ●Isolation voltage: VISO=1500V 50Hz Sine wave, RMS 3.9±0.2 0.8±0.2 16.9± 0.3 ●Average on-state current: IT(AV)=3A

TF541S

Abstract: TF521S TF561S
Contextual Info: TO-220F 5A Thyristor TF521S, TF541S, TF561S • Features External Dimensions φ 3.3±0.2 ●Gate trigger current: IGT=15mA max C 0.5 1.35±0.15 1.35±0.15 +0.2 0.85 – 0.1 3.9± 13.0 min ●UL approved type available 0.2 a b 0.2 ●Isolation voltage: VISO=1500V 50Hz Sine wave, RMS

TF821S

Abstract: TF861S
Contextual Info: TO-220F 8A Thyristor TF821S, TF841S, TF861S • Features External Dimensions ●Gate trigger current: IGT=15mA max ●Isolation voltage: VISO=1500V 50Hz Sine wave, RMS 13.0 min ●UL approved type available 0.2 0.2 3.9± 0.8± 0.3 16.9± 0.2 8.4± ●Repetitive peak off-state voltage: VDRM=200, 400, 600V

TF521S

Contextual Info: TO-220F 5A Thyristor TF521S, TF541S, TF561S • Features External Dimensions φ 3.3±0.2 0.3 16.9± ●Gate trigger current: IGT=15mA max ●Isolation voltage: VISO=1500V 50Hz Sine wave, RMS 13.0 min ●UL approved type available 0.2 0.2 3.9± 0.8± ●Repetitive peak off-state voltage: VDRM=200, 400, 600V

SG1000R22

Abstract: RGK20 Gate Turn-off Thyristor 100V 1000A gate turn-off DT350
Contextual Info: SG1000R22 CHOPPER, GATE TURN-OFF THYRISTOR SILICON DIFFUSED TYPE INVERTER, MOTOR CONTROL APPLICATION. Unit in mm F E ATURES: Repetitive Peak Off-State Voltage : V|}j>jj=1300V Repetitive Peak Reverse Voltage : V r r m =100V R.M.S On-State Current : It RMS = 250A

TM883S-L

Abstract: TM883S 2T23
Contextual Info: TO-220F 8A Triac TM883S-L • Features External Dimensions ●Gate trigger current: IGT =30mA max MODE , , 13.0 min ●Isolation voltage: VISO=1500V (50Hz Sine wave, RMS) 0.2 0.2 3.9± 0.8± 0.3 16.9± 0.2 8.4± ●RMS on-state current: I T(RMS) =8A 10.0

TM583S-L

Abstract: TM583S tm583sl triac 800V 1A triac 1500v
Contextual Info: TO-220F 5A Triac TM583S-L • Features External Dimensions ●Gate trigger current: IGT =20mA max MODE , , 13.0 min ●Isolation voltage: VISO=1500V (50Hz Sine wave, RMS) 0.2 0.2 3.9± 0.8± 0.3 16.9± 0.2 8.4± ●RMS on-state current: I T(RMS) =5A 10.0

CR3PM-12

Abstract: CR3PM-12-A8 PRSS0003AA-A CR3PM-12A
Contextual Info: Preliminary Datasheet CR3PM-12 R07DS0113EJ0300 Previous: REJ03G0357-0200 Rev.3.00 Sep 13, 2010 Thyristor Low Power Use Features •     Insulated Type  Glass Passivation Type  UL Recognized : Yellow Card No. E223904 IT (AV) : 3 A VDRM : 600 V