RG10 DIODE Search Results

rg10

Contextual Info: SANKEN ELECTRIC CO., LTD. RG10 １ Scope The present specifications shall apply to an RG10. ２ Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification ３ Flammability UL94V-0 Equivalent ４ Absolute maximum ratings No.

RG10

Abstract: RG10A RG10Y
Contextual Info: RG10 - RG10Y SUPER FAST RECTIFIER DIODES PRV : 70 - 600 Volts Io : 1.0 - 1.5 Amperes D2 FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Super fast recovery time Pb / RoHS Free

Contextual Info: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com RG10 - RG10Y SUPER FAST RECTIFIER DIODES

RG10

Abstract: RG10A RG10Y
Contextual Info: RG10 - RG10Y SUPER FAST RECTIFIER DIODES PRV : 70 - 600 Volts Io : 1.0 - 1.5 Amperes D2 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Super fast recovery time 1.00 25.4

Contextual Info: Ultra-Fast-Recovery Rectifier Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter IFSM （A） IR IR（H） （mA） （mA） VR ＝VRM VR ＝VRM max IF Ta＝100℃ max max （A） Tstg Tj （℃） （℃） VF （V） Type No.

Contextual Info: Ultra-Fast-Recovery Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter IFSM (A) Tj (°C) VF (V) Tstg (°C) VRM (V) I F (AV) (A) 1000 0.7 70 1.5 RG 10 400 1.2 RG 10A 600 1.0 2.0 1.0 70 1.5 1.1 1.5 Type No. RG 1C RG 10Y

RG10

Abstract: RG10A RG10Y RG10Z
Contextual Info: Ultra-Fast-Recovery Rectifier Diodes Electrical Characteristics Ta =25°C Absolute Maximum Ratings Parameter VRM (V) I F(AV) (A) 1000 0.7 RG 10Y 70 1.5 RG 10Z 200 Type No. RG 1C Tj (°C) IFSM (A) 400 RG 10A 600 70 RG 2Y VF (V) 50Hz Half-cycle Sinewave Single Shot

Contextual Info: High efficient rectifier diodes. 1 Amp. to 2 Amps. The plastic material carries U/L recognition 94V-0. Maximum Average Max. Recurrent Repetitive Forward Peak Forward Surge Forward Rectified Reverse TYPE Current Current Current Voltage V rrm Ifrm I fsm IF AV Ta

fmgg2c

Contextual Info: Package I F AV (A) Part Number IFSM (A) 50Hz Tj (°C) 1000 Frame-2Pin IR (H) (mA) t rr VF (V) max IF V = V V = V Ta R RM R RM (A) (°C) max max Half-cycle Sinewave Single Shot Axial IR (µA) Tstg (°C) 1 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

Contextual Info: 4-3 Ultrafast Recovery Diodes VRM V 200 300 400 600 186 Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave 10.0 TO-220F(Center-tap) FMXB-2102 10.0 TO-220F(Center-tap) FML-22S 10.0 TO-220F(Center-tap) 10.0

Contextual Info: Part Number IFSM A Tj (°C) 50Hz IF V = V V = V R RM R RM (A) max max t rr IF / I FP (mA) 2 (ns) IF / I FP (mA) Rth (j- ) Mass Fig. (°C/W) (g) No. 1.0 25 –40 to +150 1.2 1.0 100 0.5 100 100 100/100 50 100/200 22 0.13 1.0 30 –40 to +150 1.2 1.0 100 0.5

Contextual Info: Part Number IFSM A Tj (°C) 50Hz –40 to +150 1.3 1.0 10 0.05 150 50 100/100 30 100/200 20 0.07 –40 to +150 1.8 0.7 100 0.5 100 100 100/100 50 100/200 22 0.13 0.7 15 –40 to +150 2.0 0.7 50 0.3 100 100 100/100 50 100/200 20 0.2 0.8 15 –40 to +150 1.8

AG01

Abstract: AL01 EG01 FMG-14S FMG-24S FML-14S FML-24S FML-G14S FMN-G14S FMX-G14S
Contextual Info: Part Number IFSM A Tj (°C) 50Hz IF V = V V = V Ta R RM R RM (A) (°C) max max 1.3 1.0 10 0.05 150 50 100/100 30 100/200 20 0.07 1.8 0.7 100 0.5 100 100 100/100 50 100/200 22 0.13 0.7 15 –40 to +150 2.0 0.7 50 0.3 100 100 100/100 50 100/200 20 0.2 0.8

FMDG26

Contextual Info: VRM V Package Part Number Surface Mount MP3-306 Axial 600 Frame-2Pin Center-tap 30 I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) 1 t rr 2

AG01Z

Abstract: AL01Z EG01Z EL02Z EN01Z FML-G12S SFPL-52 SFPL-62 SFPX-62 SPX-62S
Contextual Info: VRM V Package Part Number I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

fmng12

Abstract: FMXG12 AG01Z AL01Z EG01Z EN01Z MP2-202S MPL-102S FMPG12 SFPL-62
Contextual Info: VRM V Package Part Number I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) t rr 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

Contextual Info: DI9952 DUAL N & P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features High Cell D ensity DMOS Technology Low O n-S tate Resistance High Pow er and C urrent C apability Fast Sw itching Speed High Transient Tolerance SO-8 llll P-CHANNEL tpTffl ,6 uuu A

DELL 1525

Abstract: STR 456 D-73230 TEKELEC* te 358 Tekelec TE 10 75 HATTELAND TRANSISTOR c 5578 B SF 119 D H1088 nissei bv
Contextual Info: 23-013Q HITACHI EUROPE ELECTRONIC COMPONENTS GROUP European Sales Locations Sept. 1997 HITACHI EUROPE ELECTRONIC COMPONENTS GROUP PRODUCT RANGE 4-, 8-, 16-Bit Microcomputers Microprocessor - Peripherals 32-Bit Microprocessors & Microcontrollers Smart Card ICs

str g 6151

Abstract: CH1290 F-67833 Hitachi DSAUTAZ006 tekelec eagle D1071 D4431 D0130 Hitachi LCD 44100
Contextual Info: 23-013A HITACHI EUROPE ELECTRONIC COMPONENTS GROUP European Sales Locations September 2001 HITACHI EUROPE ELECTRONIC COMPONENTS GROUP PRODUCT RANGE 8-, 16-Bit Microcomputers Microprocessor - Peripherals 32-Bit Microprocessors & Microcontrollers Smart Card ICs

RN4Z

Contextual Info: Characteristic Curves Rectifier Diodes SFPM-5 series 0.6 0.4 0.1 Ta = 150°C 100°C 60°C 25°C 0.01 t 1.6 P.C.B. Solder Land = 3.0 35µmCu 25 50 75 100 125 Ambient Temperature Ta °C 150 0.001 0.3 0.5 0.7 0.9 1.1 1.3 Forward Voltage VF (V) 30 25 20ms 20

AN-978

Abstract: "AN-978" IR2110 AN-978 IR2110 inverter using irs2110 PWM IR2112 IRF540 ir2110 Application Note AN-967 PWM IR2117 dc to dc converter IR2110 INVERTER SCHEMATIC full bridge ir2110 Inverter IR2110
Contextual Info: Application Note AN-978 HV Floating MOS-Gate Driver ICs HEXFET is a trademark of International Rectifier Table of Contents Page Gate drive requirement of high-side devices. 2 A typical block diagram . 3

DC motor speed control using 555 timer and mosfet

Abstract: ac control using ir2110 and mosfet IR2110 INVERTER SCHEMATIC 1n2074a driver circuit for MOSFET IR2110 PWM IR2110 for CIRCUIT inverter IR2110 INVERTER DIAGRAM AN978 1N2074 IR2110 buck boost converter
Contextual Info: APPLICATION NOTE AN978 International Rectifier • 233 Kansas Street El Segundo CA 90245 USA HV Floating MOS-Gate Driver ICs HEXFET is a trademark of International Rectifier Topics Covered: Gate drive requirements of high side devices Block diagram of a typical MGD

power inverter schematic diagram ir2110

Abstract: IR2110 INVERTER SCHEMATIC 1n 4148 zener diode DIODE LN4148 full bridge ir2110 IR2110 full bridge inverter PWM IR2112 IRF540 pin configuration IR2110 INVERTER DIAGRAM 1n2074a Inverter IR2110
Contextual Info: Index AN-978 V. Int HV Floating MOS-Gate Driver ICs (HEXFET is a trademark of International Rectifier) Topics Covered: Gate drive requirements of high side devices Block diagram of a typical MGD Bootstrap operation How to select the bootstrap components

1n2074a

Abstract: DT98-2a Bootstrap Component Selection for Cont power inverter schematic diagram ir2110 AN978a Inverter IR2110 full bridge ir2110 PWM IR2112 IRF540 ac control using ir2110 and mosfet h bridge irf740 h bridge ir2110
Contextual Info: APPLICATION NOTE AN978-b International Rectifier • 233 Kansas Street El Segundo CA 90245 USA HV Floating MOS-Gate Driver ICs HEXFET is a trademark of International Rectifier Topics Covered: Gate drive requirements of high side devices Block diagram of a typical MGD