RFP14N0 Search Results

RELAY 4088

Abstract: TB334 RFD14N06L RFD14N06LSM RFD14N06LSM9A RFP14N06L
Contextual Info: RFD14N06L, RFD14N06LSM, RFP14N06L Data Sheet Title FD1 06L D14 6LS P14 6L bt A, V, 00 m, gic vel, Cha el wer OSTs) utho eyrds ter- July 1999 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features These are N-Channel power MOSFETs manufactured using

14n05l

Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet Title FD1 05L D14 5LS P14 5L bt A, V, 00 m, gic vel, Cha el wer OSTs) utho eyrds ter- April 1999 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features These are N-channel power MOSFETs manufactured using

f14n05

Contextual Info: RFD14N05, RFD14N05SM, RFP14N05 Data Sheet Title FD1 05, D14 5S P14 5 bt A, V, 00 m, anwer OSTs) utho eyrds ter- July 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs Features These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

f14n05l

Abstract: f14n05 14n05l 14N05 AN9321 RFD14N05L RFD14N05LSM RFD14N05LSM9A RFP14N05L TB334
Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet November 2004 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

14n05l

Abstract: FP14N05L RFD14N05LSM9A 14N05
Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L in te v s il D a ta S h e e t A p r i l 1999 14A, SOV, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs 2 2 4 6 .3 Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

Contextual Info: RFD14N06L, RFD14N06LSM, RFP14N06L Semiconductor April 1999 Data Sheet 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs • 14A, 60V • r DS ON = 0 .1 0 0 i2 • Temperature Compensating PSPICE Model • Can be Driven Directly from CMOS, NMOS, and TTL

f14n05

Abstract: AN9321 AN9322 RFD14N05 RFD14N05SM RFD14N05SM9A RFP14N05 TB334 mosfet 4413
Contextual Info: RFD14N05, RFD14N05SM, RFP14N05 Data Sheet July 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs • 14A, 50V Formerly developmental type TA09770. Ordering Information PACKAGE 2268.5 Features These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

AN7254

Abstract: AN7260 AN9321 AN9322 RFP14N06 TB334
Contextual Info: RFP14N06 Data Sheet Title FP1 06 bt A, V, 00 m, 14A, 60V, 0.100 Ohm, N-Channel Power MOSFET Features This N-Channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum

d14n05

Abstract: d14n05 220 package RFD14N05 AN9321 RFD14N05SM RFD14N05SM9A RFP14N05 TB334
Contextual Info: RFD14N05, RFD14N05SM, RFP14N05 Data Sheet January 2002 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs Features These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

14n05l

Abstract: 14N05 RFD14N05LSM9A TB334 AN9321 RFD14N05L RFD14N05LSM RFP14N05L
Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet January 2002 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

f14n05

Abstract: RFD14N05 RFP14N05 AN9321 AN9322 RFD14N05SM RFD14N05SM9A TB334
Contextual Info: RFD14N05, RFD14N05SM, RFP14N05 Data Sheet January 2002 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

mosfet motor dc 48v

Abstract: 14n06l 14N06 FP14N RELAY 4088 RFD14N06L RFD14N06LSM RFD14N06LSM9A RFP14N06L TB334
Contextual Info: RFD14N06L, RFD14N06LSM, RFP14N06L Data Sheet July 1999 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs • 14A, 60V Formerly developmental type TA09870. Ordering Information PACKAGE 4088.3 Features These are N-Channel power MOSFETs manufactured using

IRF540 complementary

Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3

f14n05

Abstract: AN7254 AN7260 AN9321 RFD14N05 RFD14N05SM RFD14N05SM9A RFP14N05 JEDEC TO-251AA
Contextual Info: RFD14N05, RFD14N05SM, RFP14N05 S E M I C O N D U C T O R 14A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO-220AB • 14A, 50V SOURCE DRAIN GATE • rDS ON = 0.100Ω • Temperature Compensating PSPICE Model

RELAY 4088

Abstract: AN7254 AN7260 RFD14N06L RFD14N06LSM RFD14N06LSM9A RFP14N06L 48v 100a
Contextual Info: RFD14N06L, RFD14N06LSM, RFP14N06L S E M I C O N D U C T O R 14A, 60V, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1996 Features Packaging • 14A, 60V JEDEC TO-220AB SOURCE DRAIN GATE • rDS ON = 0.100Ω • Temperature Compensating PSPICE Model

14n05l

Abstract: 14N05 Transistor TT 2246 TT 2246 RFD14N05LSM RFP14N05L RFD14N05L rs 355 integrated circuits FP14N05L AN7254
Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L S E M I C O N D U C T O R 14A, 50V, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging • 14A, 50V JEDEC TO-220AB SOURCE DRAIN GATE • rDS ON = 0.100Ω • Temperature Compensating PSPICE Model

RFP14N05

Abstract: RFD14N05 RFD14N05SM rca MIL ID
Contextual Info: Power MegaFETs - RFD14N05, RFD14N05SM, RFP14N05 File Number 2 268 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs TERMINAL DIAGRAM 14 A, 50 V Tds(on) “ o.m Features: • Single pulse avalanche energy rated

f14n05l

Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet November 2004 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

14N05

Abstract: FT4N05 F14N05
Contextual Info: f f ï H A ^ 8 E“ ' R R RFD14N05, RFD14N05SM, RFP14N05 I S 14A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO -220A B • 14A, 5 0 V • r DS ON = 0.10012 • T e m p e ra tu re C o m p e n s a tin g P S P IC E M odel

F14N06

Abstract: ECE relay rfd14n06
Contextual Info: f j l H A R R RFD14N06, RFD14N06SM, RFP14N06 I S S E M I C O N D U C T O R 14A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packaging JEDEC TO-22ÛAB • 14A ,60V • *DS ON = 0 .1 0 0 i2 • Temperature Compensating PSPICE Model

f14n05

Contextual Info: RFD14N05, RFD14N05SM, RFP14N05 interrii — 1 D a ta S h e e t J u ly 1 9 9 9 , • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

RFD14N05L

Abstract: 14N05 RFP14N05L RFD14N05LSM
Contextual Info: Logic-Level Pow er M O S F E T s - RFD14N05L, RFD14N05LSM, RFP14N05L File Number 2246 N-Channel Logic-Level Enhancement-Mode Power Field-Effect Transistors MegaFETs 14 A, 50 V rDs(on): 0.1 Cl N -C H A N N EL E N H A N C E M E N T M ODE

Contextual Info: in te r r ii RFP14N06 D a ta S h e e t 14A, 60 V, 0.100 Ohm, N-Channel Power MOSFET This N-Channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It

Contextual Info: RFD14N06, RFD14N06SM, RFP14N06 HARRIS r^ o V o V ^ 14A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs MegaFETs Ju n e 1995 Packaging Features JEDEC T0-220AB • 14A, 60V • rDS(ON) SOURCE = 0.100i2 • Temperature Compensating PSPICE Model